FMMT593 datasheet, PDF - EEWORLD Datasheet

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FMMT593: Description1000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR; Categorysemiconductor Discrete semiconductor; File Size443KB，1 Pages; ManufacturerHTSEMI（ Jin Yu Semiconductor ）; Websitehttp://www.htsemi.com

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FMMT593 Overview

1000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR

FMMT593 Parametric

Parameter Name	Attribute value
Number of terminals	3
Transistor polarity	PNP
Maximum collector current	1 A
Maximum Collector-Emitter Voltage	100 V
Lead-free	Yes
EU RoHS regulations	Yes
state	ACTIVE
packaging shape	Rectangle
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	GULL WING
terminal coating	MATTE Tin
Terminal location	pair
Packaging Materials	Plastic/Epoxy
structure	single
Number of components	1
transistor applications	switch
Transistor component materials	silicon
Maximum ambient power consumption	0.5000 W
Transistor type	Universal small signal
Minimum DC amplification factor	50
Rated crossover frequency	50 MHz

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FMMT593

TRANSISTOR (PNP)

SOT–23

FEATURES



Complementary Type FMMT493

MARKING:593

MAXIMUM RATINGS (T

a

=25℃ unless otherwise noted)

Symbol

V

CBO

V

CEO

V

EBO

I

C

P

C

R

ΘJA

T

j

T

stg

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

Storage Temperature

Value

-120

-100

-5

-1

250

500

150

-55½+150

Unit

V

A

mW

℃/W

℃

1. BASE

2. EMITTER

3. COLLECTOR

ELECTRICAL CHARACTERISTICS (T

a

=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

Symbol

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

CES

I

EBO

h

FE(1)

*

DC current gain

h

FE(2)

*

h

FE(3)

*

h

FE(4)

*

Collector-emitter saturation voltage

Base-emitter saturation voltage

Base-emitter voltage

Transition frequency

Collector output capacitance

V

CE(sat)1

*

V

CE(sat)2

*

V

BE(sat)

*

V

BE

*

f

T

C

ob

Test

conditions

Min

-120

-100

-5

-0.1

100

50

-0.2

-0.3

-1.1

-1

50

5

V

MHz

pF

300

Typ

Max

Unit

V

µA

I

C

=-100µA, I

E

=0

I

C

=-10mA, I

B

=0

I

E

=-100µA, I

C

=0

V

CB

=-100V, I

E

=0

V

CES

=-100V, I

E

=0

V

EB

=-4V, I

C

=0

V

CE

=-5V, I

C

=-1mA

V

CE

=-5V, I

C

=-250mA

V

CE

=-5V, I

C

=-0.5A

V

CE

=-5V, I

C

=-1A

I

C

=-250mA, I

B

=-25mA

I

C

=-500mA, I

B

=-50mA

I

C

=-500mA, I

B

=-50mA

V

CE

=-5V, I

C

=-1mA

V

CE

=-10V,I

C

=-50mA, f=100MHz

V

CB

=-10V, I

E

=0, f=1MHz

*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.

１　

JinYu

semiconductor

www.htsemi.com

Ｄ½½½：２０１１／０５

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