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FR206G

Description
2 A, 800 V, SILICON, RECTIFIER DIODE, DO-15
Categorysemiconductor    Discrete semiconductor   
File Size114KB,2 Pages
ManufacturerDACHANG
Websitehttp://www.dachang.com.cn
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FR206G Overview

2 A, 800 V, SILICON, RECTIFIER DIODE, DO-15

SIYU
R
FR201G ...... FR207G
Plastic Fast Recover Rectifier
特征
Features
Reverse Voltage 50 to 1000V
Forward Current 2.0A
塑封快恢复整流二极管
反向电压
50 --- 1000 V
正向电流
2.0 A
DO-15
·玻璃钝化芯片
Glass passivated chip
·反向漏电流½
Low reverse leakage
.034(0.9)
DIA
.028(0.7)
·正向浪涌承受½力较强
High forward surge capability
·高温焊接保证
High temperature soldering guaranteed:
260℃/10
秒,
0.375" (9.5mm)引线长度。
260℃/10 seconds, 0.375" (9.5mm) lead length,
·引线可承受5 磅
(2.3kg)
拉力。
5 lbs. (2.3kg) tension
·引线和管½皆符合RoHS标准 。
Lead and body according with RoHS standard
1.0(25.4)
MIN
.300(7.6)
.230(5.8)
.140(3.6)
DIA
.104(2.6)
1.0(25.4)
MIN
机械数据
Mechanical Data
Unit:inch(mm)
·端子: 镀锡½向引线
Terminals: Plated axial leads
·极性: 色环端为负极
Polarity: Color band denotes cathode end
·安装½½: 任意
Mounting Position: Any
极限值和温度特性
TA = 25℃
除非另有规定。
Maximum Ratings & Thermal Characteristics
符号
Symbols
最大可重复峰值反向电压
Maximum repetitive peak reverse voltage
Ratings at 25℃ ambient temperature unless otherwise specified.
FR201G FR202G FR203G FR204G FR205G FR206G FR207G
50
35
50
100
70
100
200
140
200
400
280
400
2.0
70
60
600
420
600
800
560
800
1000
700
1000
单½
Unit
V
V
V
A
A
℃/W
V
RRM
最大均方根电压
Maximum RMS voltage
V
RMS
V
DC
I
F(AV)
I
FSM
R
θJA
Tj, TSTG
最大直流阻断电压
Maximum DC blocking voltage
最大正向平均整流电流
Maximum average forward rectified current
峰值正向浪涌电流 8.3ms单一正弦半波
Peak forward surge current 8.3 ms single half sine-wave
典型热阻
Typical thermal resistance
工½结温和存储温度
Operating junction and storage temperature range
-55 --- +150
电特性
TA = 25℃
除非另有规定。
Electrical Characteristics
Ratings at 25℃ ambient temperature unless otherwise specified.
符号
Symbols
最大正向电压
Maximum forward voltage
FR201G FR202G FR203GFR204G FR205G FR206GFR207G
1.3
5.0
100
单½
Unit
V
μA
I
F
= 2.0A
TA= 25℃
TA=125℃
I
F
=0.5A I
R
=1.0A I
RR
=0.25A
V
F
I
R
trr
C
j
150
最大反向电流
Maximum reverse current
最大反向恢复时间
MAX. Reverse Recovery Time
300
35
nS
pF
典型结电容
Type junction capacitance
V
R
= 4.0V, f = 1MHz
大昌电子
DACHANG ELECTRONICS

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