PHP125T/R datasheet, PDF - EEWORLD Datasheet

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PHP125T/R: DescriptionTRANSISTOR 2.5 A, 30 V, 0.25 ohm, P-CHANNEL, Si, POWER, MOSFET, MS-012AA, PLASTIC, SO-8, FET General Purpose Power; CategoryDiscrete semiconductor The transistor; File Size86KB，12 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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PHP125T/R Overview

TRANSISTOR 2.5 A, 30 V, 0.25 ohm, P-CHANNEL, Si, POWER, MOSFET, MS-012AA, PLASTIC, SO-8, FET General Purpose Power

PHP125T/R Parametric

Parameter Name	Attribute value
Maker	NXP
Parts packaging code	SOIC
package instruction	SMALL OUTLINE, R-PDSO-G8
Contacts	8
Reach Compliance Code	unknown
ECCN code	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (ID)	2.5 A
Maximum drain-source on-resistance	0.25 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	MS-012AA
JESD-30 code	R-PDSO-G8
Number of components	1
Number of terminals	8
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	P-CHANNEL
Maximum power consumption environment	2 W
Maximum pulsed drain current (IDM)	10 A
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Maximum off time (toff)	140 ns
Maximum opening time (tons)	80 ns

PHP125T/R Preview

DISCRETE SEMICONDUCTORS

DATA SHEET

PHP125

P-channel enhancement mode

MOS transistor

Product speciﬁcation

Supersedes data of 1996 Apr 02

File under Discrete Semiconductors, SC13b

1997 Jun 18

Philips Semiconductors

Product speciﬁcation

P-channel enhancement mode

MOS transistor

FEATURES

•

High-speed switching

•

No secondary breakdown

•

Very low on-resistance.

APPLICATIONS

•

Motor and actuator driver

•

Power management

•

Synchronized rectification.

n.c. s

handbook, halfpage

PHP125

DESCRIPTION

P-channel enhancement mode MOS transistor in an 8-pin

plastic SO8 (SOT96-1) package.

d d d

PINNING - SO8 (SOT96-1)

SYMBOL

n.c.

DESCRIPTION

not connected

source

gate

drain

CAUTION

The device is supplied in an antistatic package.

The gate-source input must be protected against static

discharge during transport or handling.

Fig.1 Simplified outline and symbol.

MAM115

QUICK REFERENCE DATA

SYMBOL

GSth

DSon

tot

PARAMETER

drain-source voltage (DC)

source-drain diode forward voltage

gate-source voltage (DC)

gate-source threshold voltage

drain current (DC)

drain-source on-state resistance

total power dissipation

−1

mA; V

= V

= 80

°C

−1

A; V

−10

= 80

°C

−1.25

CONDITIONS

−

−1

−

MIN.

MAX.

−30

−1.6

±20

−2.8

−2.5

0.25

2.8

Ω

UNIT

1997 Jun 18

Philips Semiconductors

Product speciﬁcation

P-channel enhancement mode

MOS transistor

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

tot

PARAMETER

drain-source voltage (DC)

gate-source voltage (DC)

drain current (DC)

peak drain current

total power dissipation

= 80

°C;

note 1

note 2

= 80

°C

amb

= 25

°C;

note 3

amb

= 25

°C;

note 4

stg

Notes

1. T

is the temperature at the soldering point of the drain lead.

2. Pulse width and duty cycle limited by maximum junction temperature.

3. Value based on a printed-circuit board with a R

th a-tp

(ambient to tie-point) of 27.5 K/W.

4. Value based on a printed-circuit board with a R

th a-tp

(ambient to tie-point) of 90 K/W.

storage temperature

operating junction temperature

= 80

°C

note 2

CONDITIONS

−

−65

−

MIN.

PHP125

MAX.

−30

±20

−2.5

−10

2.8

2.4

1.1

+150

−2

−8

UNIT

°C

Source-drain diode

source current (DC)

peak pulsed source current

MBG848

handbook, halfpage

−10

handbook, halfpage

(A)

−10

MBG752

Ptot

(W)

(1)

tp =

µs

100

µs

−1

−10

−1

100

150

Ts (

200

−10

−2

−10

−1

−10

1 ms

= T

10 ms

100 ms

VDS (V)

−10

= 0.01; T

= 80

°C.

(1) R

DSon limitation

Fig.2 Power derating curve.

Fig.3 SOAR.

1997 Jun 18

Philips Semiconductors

Product speciﬁcation

P-channel enhancement mode

MOS transistor

THERMAL CHARACTERISTICS

SYMBOL

th j-s

PARAMETER

thermal resistance from junction to soldering point

PHP125

VALUE

UNIT

K/W

handbook, full pagewidth

Rth j−s

(K/W)

MBG753

0.75

0.5

0.33

0.2

0.1

0.05

0.02

0.01

−1

−6

= T

−4

−3

−2

−1

−5

tp (s)

Fig.4 Transient thermal resistance from junction to soldering point as a function of pulse time; typical values.

1997 Jun 18

Philips Semiconductors

Product speciﬁcation

P-channel enhancement mode

MOS transistor

CHARACTERISTICS

= 25

°C

unless otherwise speciﬁed.

SYMBOL

(BR)DSS

GSth

DSS

GSS

DSon

iss

oss

rss

PARAMETER

drain-source breakdown voltage

gate-source threshold voltage

drain-source leakage current

gate leakage current

drain-source on-state resistance

input capacitance

output capacitance

reverse transfer capacitance

total gate charge

gate-source charge

gate-drain charge

CONDITIONS

= 0; I

−10 µA

= V

; I

−1

= 0; V

−24

±20

V; V

= 0

−4.5

V; I

−0.5

−10

V; I

−1

= 0; V

−24

V; f = 1 MHz

= 0; V

−24

V; f = 1 MHz

= 0; V

−24

V; f = 1 MHz

−10

V; V

−15

−1

−10

V; V

−15

−1

−10

V; V

−15

−1

= 0 to

−10

V; V

−15

−1

A; R

= 15

Ω;

gen

= 6

Ω

=−10 to 0 V; V

−15

−1

A; R

= 15

Ω;

gen

= 6

Ω

MIN.

−30

−1

−

TYP.

−

0.33

0.22

250

140

PHP125

MAX.

−

−2.8

−100

±100

0.4

0.25

−

UNIT

Ω

Switching times

(see Fig.11)

d(on)

d(off)

off

turn-on delay time

fall time

turn-on switching time

turn-off delay time

rise time

turn-off switching time

= 0; I

−1.25

A; di/dt = 100 A/µs

−

4.5

3.5

−

150

−

−1.6

200

Source-drain diode

source-drain forward voltage

reverse recovery time

1997 Jun 18

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PHP125T/R Related Products

	PHP125T/R	PHP125/T3	PHP125
Description	TRANSISTOR 2.5 A, 30 V, 0.25 ohm, P-CHANNEL, Si, POWER, MOSFET, MS-012AA, PLASTIC, SO-8, FET General Purpose Power	TRANSISTOR 2.5 A, 30 V, 0.25 ohm, P-CHANNEL, Si, POWER, MOSFET, MS-012AA, PLASTIC, SO-8, FET General Purpose Power	TRANSISTOR 2.5 A, 30 V, 0.25 ohm, P-CHANNEL, Si, POWER, MOSFET, MS-012AA, PLASTIC, SO-8, FET General Purpose Power
Maker	NXP	NXP	NXP
Parts packaging code	SOIC	SOIC	SOIC
package instruction	SMALL OUTLINE, R-PDSO-G8	SMALL OUTLINE, R-PDSO-G8	SMALL OUTLINE, R-PDSO-G8
Contacts	8	8	8
Reach Compliance Code	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V	30 V	30 V
Maximum drain current (ID)	2.5 A	2.5 A	2.5 A
Maximum drain-source on-resistance	0.25 Ω	0.25 Ω	0.25 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	MS-012AA	MS-012AA	MS-012AA
JESD-30 code	R-PDSO-G8	R-PDSO-G8	R-PDSO-G8
Number of components	1	1	1
Number of terminals	8	8	8
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	P-CHANNEL	P-CHANNEL	P-CHANNEL
Maximum power consumption environment	2 W	2 W	2 W
Maximum pulsed drain current (IDM)	10 A	10 A	10 A
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Maximum off time (toff)	140 ns	140 ns	140 ns
Maximum opening time (tons)	80 ns	80 ns	80 ns

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