Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
FEATURES
• Low forward volt drop
• Fast switching
• Reverse surge capability
• High thermal cycling performance
• Low thermal resistance
PBYL2025B series
SYMBOL
QUICK REFERENCE DATA
V
R
= 20 V/ 25 V
k
tab
a
3
I
F(AV)
= 20 A
V
F
≤
0.43 V
GENERAL DESCRIPTION
Schottky rectifier diodes intended
for use as output rectifiers in low
voltage, high frequency switched
mode power supplies.
The PBYL2025B series is supplied
in the SOT404 surface mounting
package.
PINNING
PIN
1
2
3
tab
DESCRIPTION
no connection
cathode
1
anode
SOT404
tab
2
cathode
1
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
V
RRM
V
RWM
V
R
I
F(AV)
I
FRM
I
FSM
Peak repetitive reverse
voltage
Working peak reverse
voltage
Continuous reverse voltage
Average rectified forward
current
Repetitive peak forward
current
Non-repetitive peak forward
current
Peak repetitive reverse
surge current
Operating junction
temperature
Storage temperature
CONDITIONS
PBYL20
-
-
T
mb
≤
120 ˚C
square wave;
δ
= 0.5; T
mb
≤
131 ˚C
square wave;
δ
= 0.5; T
mb
≤
131 ˚C
t = 10 ms
t = 8.3 ms
sinusoidal; T
j
= 125 ˚C prior to
surge; with reapplied V
RRM(max)
pulse width and repetition rate
limited by T
j max
-
-
-
-
-
-
-
- 65
MIN.
20B
20
20
20
20
40
180
200
2
150
175
MAX.
25B
25
25
25
UNIT
V
V
V
A
A
A
A
A
˚C
˚C
I
RRM
T
j
T
stg
1.
It is not possible to make connection to pin 2 ofthe SOT404 package.
March 1998
1
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
THERMAL RESISTANCES
SYMBOL PARAMETER
R
th j-mb
R
th j-a
Thermal resistance junction
to mounting base
Thermal resistance junction
to ambient
CONDITIONS
PBYL2025B series
MIN.
-
TYP. MAX. UNIT
-
50
1.5
-
K/W
K/W
pcb mounted, minimum footprint, FR4
board
-
ELECTRICAL CHARACTERISTICS
T
j
= 25 ˚C unless otherwise specified
SYMBOL PARAMETER
V
F
Forward voltage
CONDITIONS
I
F
= 20 A; T
j
= 150˚C
I
F
= 20 A; T
j
= 125˚C
I
F
= 40 A; T
j
= 125˚C
I
F
= 40 A
V
R
= V
RWM
V
R
= V
RWM
; T
j
= 100˚C
V
R
= 5 V; f = 1 MHz, T
j
= 25˚C to 125˚C
MIN.
-
-
-
-
-
-
-
TYP. MAX. UNIT
0.36
0.39
0.55
0.59
0.4
30
1230
0.43
0.45
0.62
0.65
10
60
-
V
V
V
V
mA
mA
pF
I
R
C
d
Reverse current
Junction capacitance
March 1998
2
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
PBYL2025B series
15
Forward dissipation, PF (W)
Vo = 0.27 V
Rs = 0.00875 Ohms
PBYL2025
0.5
Tmb(max) / C
127.5
D = 1.0
135
1A
100mA
IR / A
150 C
125 C
PBYR1625
0.2
10
0.1
10mA 100 C
1mA
75 C
50 C
5
I
t
p
D=
t
p
142.5
T
t
100uA
Tj = 25 C
10uA
T
0
0
5
10
15
20
25
Average forward current, IF(AV) (A)
150
30
1uA
0
5
10
VR / V
15
20
25
Fig.1. Maximum forward dissipation P
F
= f(I
F(AV)
);
square current waveform where I
F(AV)
=I
F(RMS)
x
√
D.
Fig.4. Typical reverse leakage current; I
R
= f(V
R
);
parameter T
j
15
Forward dissipation, PF (W)
Vo = 0.270 V
Rs = 0.00875 Ohms
PBYL2025
Tmb(max) / C
127.5
a = 1.57
1.9
135
10000
Cd / pF
PBYR1625
10
4
2.8
2.2
1000
5
142.5
0
0
5
10
15
Average forward current, IF(AV) (A)
150
20
100
1
10
VR / V
100
Fig.2. Maximum forward dissipation P
F
= f(I
F(AV)
);
square current waveform where I
F(AV)
=I
F(RMS)
x
√
D.
PBYR1625
Fig.5. Typical junction capacitance; C
d
= f(V
R
);
f = 1 MHz; T
j
= 25˚C to 125 ˚C.
Transient thermal impedance, Zth j-mb (K/W)
50
IF / A
Tj = 25 C
Tj = 125 C
10
40
typ
30
max
1
0.1
20
0.01
10
P
D
t
p
D=
t
p
T
t
0
0
0.2
0.4
VF / V
0.6
0.8
1
0.001
1us
T
10us
100us 1ms
10ms 100ms
1s
10s
pulse width, tp (s)
PBYL1025
Fig.3. Typical and maximum forward characteristic
I
F
= f(V
F
); parameter T
j
Fig.6. Transient thermal impedance; Z
th j-mb
= f(t
p
).
March 1998
3
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
MECHANICAL DATA
Dimensions in mm
Net Mass: 1.4 g
10.3 max
4.5 max
1.4 max
PBYL2025B series
11 max
15.4
2.5
0.85 max
(x2)
2.54 (x2)
0.5
Fig.7. SOT404 : centre pin connected to mounting base.
MOUNTING INSTRUCTIONS
Dimensions in mm
11.5
9.0
17.5
2.0
3.8
5.08
Fig.8. SOT404 : soldering pattern for surface mounting.
Notes
1. Epoxy meets UL94 V0 at 1/8".
March 1998
4
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
DEFINITIONS
Data sheet status
Objective specification
Product specification
Limiting values
PBYL2025B series
This data sheet contains target or goal specifications for product development.
This data sheet contains final product specifications.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
©
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
March 1998
5
Rev 1.000
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