DG3001/3002/3003
New Product
Vishay Siliconix
Low-Voltage Sub-Ohm SPST/SPDT MICRO FOOTr Analog Switch
FEATURES
D
MICRO FOOT Chip Scale Package
(1.0 x 1.5 mm)
D
Low Voltage Operation (1.8 V to 5.5 V)
D
Low On-Resistance - r
DS(on
): 0.4
W
D
Fast Switching - t
ON
: 47 ns, t
OFF
: 40 ns
D
Low Power Consumption
D
TTL/CMOS Compatible
BENEFITS
D
D
D
D
Reduced Power Consumption
Simple Logic Interface
High Accuracy
Reduce Board Space
APPLICATIONS
D
D
D
D
D
D
Cellular Phones
Communication Systems
Portable Test Equipment
Battery Operated Systems
PCM Cards
PDA
DESCRIPTION
The DG3001/DG3002/DG3003 are monolithic CMOS analog
switches designed for high performance switching of analog
signals. The DG3001 and DG3002 are configured as SPST
switches, and the DG3003 is an SPDT switch. Combining low
power, high speed (t
ON
: 47 ns, t
OFF
: 40 ns), low on-resistance
(r
DS(on)
: 0.4
W)
and small physical size (MICRO FOOT,
6-bump), the DG3001/DG3002/DG3003 are ideal for portable
and battery powered applications requiring high performance
and efficient use of board space.
The DG3001/DG3002/DG3003 are built on Vishay Siliconix’s
low voltage JI2 process. An epitaxial layer prevents latchup.
Each switch conducts equally well in both directions when on,
and blocks up to the power supply level when off.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
MICRO FOOT (6-Bump)
DG3001DB
V+
IN
GND
B1
B2
B3
A1
A2
A3
MICRO FOOT (6-Bump)
DG3002DB
NO
(Source
1
)
COM
COM
V+
IN
GND
B1
B2
B3
A1
A2
A3
MICRO FOOT (6-Bump)
DG3003DB
NC
(Source
1
)
COM
COM
V+
IN
GND
B1
B2
B3
A1
A2
A3
NO
(Source
1
)
COM
NC (Source
2
)
Top View
Top View
Top View
A1 Locator
A1 Locator
A1 Locator
XXX
3003
XXX
3002
Device Marking: 3001
xxx = Date/Lot Traceability Code
XXX
3001
Device Marking: 3002
xxx = Date/Lot Traceability Code
Device Marking: 3003
xxx = Date/Lot Traceability Code
TRUTH TABLE
Logic
0
1
ORDERING INFORMATION
NO
OFF
ON
-40 to 85°C
NC
ON
OFF
Temp Range
Package
MICRO FOOT: 6-Bump
(3 2, 0.5-mm pitch,
165-mm nom.
165
mm
nom bump height)
Part Number
DG3001DB
DG3002DB
DG3003DB
Document Number: 72505
S-32069—Rev. A, 27-Oct-03
www.vishay.com
1
DG3001/3002/3003
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Reference to GND
V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +6 V
IN, COM, NC, NO
a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
-0.3 to (V+ + 0.3 V)
Continuous Current (NO, NC, COM) . . . . . . . . . . . . . . . . . . . . . . . .
"250
mA
Peak Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
"400
mA
(Pulsed at 1 ms, 10% duty cycle)
Storage Temperature (D Suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 150°C
Package Reflow Conditions
b
VPR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 215°C
IR/Convection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 220°C
Power Dissipation (Packages)
c
6-Bump, 2 x 3 MICRO FOOT
d
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250 mW
Notes:
a
Signals on NC, NO, or COM or IN exceeding V+ will be clamped by
internal diodes. Limit forward diode current to maximum current ratings.
b
Refer to IPC/JEDEC (J-STD-020A)
c
All bumps soldered to PC Board.
d
Derate 3.1 mW/_C above 70_C
New Product
SPECIFICATIONS (V+ = 3.0 V)
Test Conditions
Otherwise Unless Specified
Parameter
Analog Switch
Analog Signal Range
d
On-Resistance
d
r
ON
Flatness
d
r
ON
Match
d
Switch Off Leakage Current
f
V
NO
, V
NC
,
V
COM
r
ON
r
ON
Flatness
Dr
ON
I
NO(off),
I
NC(off)
I
COM(off)
Channel-On Leakage Current
f
I
COM(on)
V+ = 3.3 V
V
NO,
V
NC
= 0.3 V/3 V, V
COM
= 3 V/0.3 V
V+ = 3.3 V, V
NO,
V
NC
= V
COM
= 0.3 V/3 V
V+ = 2.7 V, V
COM
= 1.5 V, I
NO
, I
NC
= 10 mA
V+ = 2.7 V, V
COM
= 0 to V+, I
NO
, I
NC
= 10 mA
Full
Room
Full
Room
Room
Room
Full
Room
Full
Room
Full
1
−10
1
−10
1
−10
0
0.4
0.1
0.01
V+
0.7
0.8
0.2
0.05
1
10
1
10
1
10
nA
W
V
Limits
−40
to 85_C
Symbol
V+ = 3 V,
"10%,
V
IN
= 0.4 or 2.0 V
e
Temp
a
Min
b
Typ
c
Max
b
Unit
Digital Control
Input High Voltage
Input Low Voltage
Input Capacitance
d
Input
Current
d
V
INH
Full
Full
Full
V
IN
= 0 or V+
Full
2
0.4
5
−1
1
V
INL
C
in
V
pF
mA
I
INL
or I
INH
Dynamic Characteristics
Turn-On Time
d
Turn-Off Time
d
Break-Before-Make Time
d
Charge Injection
d
Off-Isolation
d
Crosstalk
d
NO, NC Off Capacitance
d
Channel-On Capacitance
d
t
ON
t
OFF
t
d
Q
INJ
OIRR
X
TALK
C
NO(off),
C
NC(off)
C
ON
C
L
= 1 nF, V
GEN
= 0 V, R
GEN
= 0
W,
Figure 3
R
L
= 50
W
C
L
= 5 pF f = 100 kHz
W,
pF,
V
IN
= 0 or V+, f = 1 MHz
V
NO
or V
NC
= 2 0 V R
L
= 300
W
C
L
= 35 pF
2.0 V,
W,
Figure 1 and 2
Room
Full
Room
Full
Room
Room
Room
Room
Room
Room
1
47
40
6
64
−70
−70
100
340
pC
dB
71
59
ns
pF
Power Supply
Power Supply Range
Power Supply Current
d
V+
I+
V
IN
= 0 or V+
2.7
0.1
3.3
1.0
V
mA
Notes:
a. Room = 25°C, Full = as determined by the operating suffix.
b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
c. Typical values are for design aid only, not guaranteed nor subject to production testing.
d. Guarantee by design, nor subjected to production test.
e. V
IN
= input voltage to perform proper function.
www.vishay.com
Document Number: 72505
S-32069—Rev. A, 27-Oct-03
2
DG3001/3002/3003
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2.00
1.75
r
ON
−
On-Resistance (
W
)
1.50
1.25
1.00
0.75
0.50
0.25
0.00
0
1
2
3
4
5
V+ = 1.8 V
V+ = 2 V
V+ = 2.7 V
V+ = 3 V
V+ = 5 V
V+ = 3.3 V
0.00
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Vishay Siliconix
r
ON
vs. V
COM
and Single Supply Voltage
T = 25
_C
I
S
= 10 mA
r
ON
−
On-Resistance (
W
)
1.00
r
ON
vs. Analog Voltage and Temperature
V+ = 3 V
I
S
= 10 mA
0.80
0.60
85_C
25_C
0.40
−40_C
0.20
V
COM
−
Analog Voltage (V)
V
COM
−
Analog Voltage (V)
Supply Current vs. Temperature
10000
1000
I+
−
Supply Current (nA)
I+
−
Supply Current (A)
V+ = 5 V
V
IN
= 0 V
100
100 mA
10 mA
1 mA
100
mA
10
mA
1
mA
100 nA
10 nA
1
−60
1 nA
−40
−20
0
20
40
60
80
100
Supply Current vs. Input Switching Frequency
V+ = 5 V
10
10
100
1K
10 K
100 K
1M
10 M
Temperature (_C)
Input Switching Frequency (Hz)
Leakage Current vs. Temperature
1000
V+ = 5 V
I
COM(on)
Leakage Current (pA)
250
200
150
100
50
0
−50
−100
−150
−200
10
−60
−40
−20
0
20
40
60
80
100
−250
0
1
Leakage vs. Analog Voltage
V+ = 5 V
I
COM(off)
Leakage Current (pA)
100
I
COM(on)
I
NO(off)
, I
NC(off)
I
COM(off)
I
NO(off)
, I
NC(off)
2
3
4
5
Temperature (_C)
Document Number: 72505
S-32069—Rev. A, 27-Oct-03
V
COM
, V
NO
, V
NC
−
Analog Voltage (V)
www.vishay.com
3
DG3001/3002/3003
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Switching Time vs. Temperature and Supply Voltage
100
t
ON
, t
OFF
−
Switching Time (ns)
90
Loss, OIRR, X
TALK
(dB)
80
70
60
50
40
30
20
10
0
−60
−40
−20
0
20
40
60
80
100
t
OFF
V+ = 3 V
t
OFF
V+ = 2 V
t
ON
V+ = 3 V
t
ON
V+ = 2 V
Insertion Loss, Off-Isolation, Crosstalk vs. Frequency
10
0
−10
−20
−30
−40
−50
−60
−70
−80
−90
100 K
1M
10 M
Frequency (Hz)
100 M
1G
V+ = 3 V
R
L
= 50
W
X
TALK
OIRR
LOSS
Temperature (_C)
Switching Threshold vs. Supply Voltage
3.0
2.5
Q
−
Charge Injection (pC)
2.0
1.5
1.0
0.5
0.0
0
1
2
3
4
5
6
7
V+
−
Supply Voltage (V)
250
200
V
T
−
Switching Threshold (V)
150
100
50
0
−50
−100
−150
−200
−250
0
Charge Injection vs. Analog Voltage
V+ = 5 V
V+ = 2 V
V+ = 3 V
1
2
3
4
5
V
COM
−
Analog Voltage (v)
www.vishay.com
4
Document Number: 72505
S-32069—Rev. A, 27-Oct-03
DG3001/3002/3003
New Product
TEST CIRCUITS
V+
Logic
Input
V+
Switch
Input
NO or NC
IN
Logic
Input
GND
R
L
300
W
C
L
35 pF
COM
Switch Output
V
OUT
Switch
Output
0V
t
ON
t
OFF
V
INH
V
INL
0.9 x V
OUT
Vishay Siliconix
50%
t
r
t
5 ns
t
f
t
5 ns
C
L
(includes fixture and stray capacitance)
V
OUT
+
V
COM
R
L
)
R
ON
R
L
Logic “1” = Switch On
Logic input waveforms inverted for switches that have
the opposite logic sense.
FIGURE 1.
Switching Time
V+
Logic
Input
COM
V
O
R
L
300
W
GND
C
L
35 pF
V
INH
V
INL
t
r
<5 ns
t
f
<5 ns
V+
V
NO
V
NC
NO
NC
IN
V
NC
= V
NO
V
O
Switch
Output
0V
90%
t
D
t
D
C
L
(includes fixture and stray capacitance)
FIGURE 2.
Break-Before-Make Interval
V+
R
gen
+
V
gen
V+
COM
IN
GND
NC or NO
V
OUT
C
L
= 1 nF
V
OUT
IN
DV
OUT
On
Off
Q =
DV
OUT
x C
L
On
V
IN
= 0
−
V+
IN depends on switch configuration: input polarity
determined by sense of switch.
FIGURE 3.
Charge Injection
Document Number: 72505
S-32069—Rev. A, 27-Oct-03
www.vishay.com
5
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