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30WQ10

Description
3.3 A, 100 V, SILICON, RECTIFIER DIODE, TO-251
CategoryDiscrete semiconductor    diode   
File Size55KB,1 Pages
ManufacturerNew Jersey Semiconductor
Websitehttp://www.njsemi.com
Download Datasheet Parametric View All

30WQ10 Overview

3.3 A, 100 V, SILICON, RECTIFIER DIODE, TO-251

30WQ10 Parametric

Parameter NameAttribute value
MakerNew Jersey Semiconductor
package instructionR-PSIP-T3
Reach Compliance Codeunknow
Is SamacsysN
applicationGENERAL PURPOSE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.8 V
JEDEC-95 codeTO-251
JESD-30 codeR-PSIP-T3
Maximum non-repetitive peak forward current42 A
Number of components1
Phase1
Number of terminals3
Maximum operating temperature125 °C
Maximum output current3.3 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Maximum repetitive peak reverse voltage100 V
Maximum reverse current2000 µA
surface mountNO
technologySCHOTTKY
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Base Number Matches1
Lpi.oa.ucti., One.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (201) 376-2922
(212)227-6005
FAX: (201) 376-8960
Schottky Rectifiers
Part
Number
11 0003
11 0004
110005
110Q06
110Q09
110Q10
21D003
210004
21D005
21DQ06
210009
210010
31 0003
310004
310005
31 0006
310009
310010
30WQ03
30WQ04
30WQ05
30W006
30WQ09
30WQ10
50WQ03
50WQ04
50WQ05
50WQ06
50WQ09
50WQ10
50SQ060
50SQ080
50S0090
50S0100
80S0030
80SQ035
80SQ040
80S0045
90SQ030
90SQ035
90SQ040
90SQ045
8T0060
8TQ080
8TQ090
8TQ100
10T0030
10TQ035
10TQ040
10TQ045
18TQ030
18T0035
18TQ040
18TQ045
18TQ050
lF(AV) @ TC
VRRM
VFM ® 'FM
3 It/im
n«»j
IFSM d)
50 Hz
(A)
40
40
25
25
40
' 40
80
80
45
45
70
70
95
95
60
60
85
85
60 Hz
(A)
42
42
26
26
42
42
85
85
48
48
73
73
100
100
63
63
90
90
(V)
30
40
50
60
90
100
30
40
50
60
90
100
30
40
50
60
90
100
30
40
50
60
90
100
30
40
50
60
90
100
60
80
90
100
30
35
40
45
30
35
40
45
60
80
90
100
30
35
40
45
30
35
40
45
50
(A)
1.1
1.1
1.1
1.1
1.1
1.1
1.7
1.7
1.7
1.7
1.7
1.7
3.3
3.3
3.3
3.3
3,3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
5.5
5.5
5.5
5,5
55
5.5
rc)
58
58
40
40
25
25
25
25
25
25
20
20
35
35
20
20
20
20
109
109
108
108
107
107
97
97
95
95
95
95
Tj » 100«C
(V)
0.52
0.52
Tj » 125*C «
MM. Tj
-Notei
Rated V
RWM
(°C)
(mA)
6
6
11
11
6
6
13
13
16
16
2
2
25
25
30
30
5
5
12.0
12.0
15.0
15.0
IRM®
' Case Style
DO-204AL
DO-41
.
.s^
125
(4)
056
0.56
0.74
0.74
0.49
0.49
0.53
0.53
0.70
0.70
0.53
0.53
0.55
0.55
0.74
0.74
125
C-23
^
125
C-16
^
060
060
0.65
0.65
0.80
0.80
40
42
125
(3)
TO-251
2.0
2.0
063
0.63(
0.70
0.70
45
47
20.0
20,0
30.0
125
.0.82
0.82
0.58
300
3.0
3.0
^
#
5
92
215
225
7
150
(7)
00-204AR
8
92
0.55
380
400
13
175
9
92
0.41
480
500
100
150
/
(2)
8
125
0,69
242
255
7
150
TO-220AC
10
110
0.58
260
275
15
150
! .
18
121
0.53
380
400
40
150
(1) Peak half-cycle sinewave, following any rated lo? •ondition. VRWM reapplied.
(2) For lead formed options see page 149.
(3) For tape and reel options see page 136.
(4) for Ip(AV). TC is ambient temperature.
(7) For IF(AV). TC is lead temperature.
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