Silicon Controlled Rectifier, 550 A, 200 V, SCR
| Parameter Name | Attribute value |
| Maker | IXYS |
| package instruction | POST/STUD MOUNT, O-MUPM-H3 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Other features | FAST |
| Nominal circuit commutation break time | 25 µs |
| Configuration | SINGLE |
| Critical rise rate of minimum off-state voltage | 200 V/us |
| Maximum DC gate trigger current | 300 mA |
| Maximum DC gate trigger voltage | 3 V |
| Maximum holding current | 1000 mA |
| JESD-30 code | O-MUPM-H3 |
| Maximum leakage current | 75 mA |
| On-state non-repetitive peak current | 11000 A |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum on-state current | 300000 A |
| Maximum operating temperature | 125 °C |
| Minimum operating temperature | -30 °C |
| Package body material | METAL |
| Package shape | ROUND |
| Package form | POST/STUD MOUNT |
| Certification status | Not Qualified |
| Maximum rms on-state current | 550 A |
| Maximum repetitive peak off-state leakage current | 75000 µA |
| Off-state repetitive peak voltage | 200 V |
| Repeated peak reverse voltage | 200 V |
| surface mount | NO |
| Terminal form | HIGH CURRENT CABLE |
| Terminal location | UPPER |
| Trigger device type | SCR |
京公网安备 11010802033920号
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