S25VB10 datasheet, PDF - EEWORLD Datasheet

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S25VB10: DescriptionHigh Current 25A Single Phase Glass Passivated Bridge Rectifiers High Current 25A Single Phase Glass Passivated Bridge Rectifiers; CategoryDiscrete semiconductor diode; File Size83KB，2 Pages; ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.; Websitehttp://www.21yangjie.com/; Environmental Compliance; Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.

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S25VB10 Overview

High Current 25A Single Phase Glass Passivated Bridge Rectifiers High Current 25A Single Phase Glass Passivated Bridge Rectifiers

桥式整流二极管

Features

Product Name: High Current 25A Single Phase Glass Passivated Bridge Rectifiers

Product model: S25VB10

product features:

High current capacity with small package

Superior thermal conductivity

Glass passivated chip

High I FSM

We declare that the material of product compliance with RoHS requirements.

Plastic Package has Underwriters Laboratory Flammability Classification 94V-0

Applications:

Used for inverter welding machine

Used for inverter welding machine controller

Used for high-power audio equipment

Maximum Ratings and Electrical Characteristics:

Rating at 25℃ ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

product data:

Maximum Repetitive Voltage VRM Maximum reverse peak voltage: 100V

Maximum DC Rectified Current TA = 25℃ IR Maximum forward current: 10μA

At rated DC blocking voltage TA=150℃ IR Maximum forward current: 500μA

Average recified forward current 50Hz sine wave, R-load

With heatsink Tc=85℃ Io ：25A

With heatsink Tc=40℃ Io ：6A

Maximum Instantaneous Forward Voltage at 12.5A VF Maximum forward voltage drop: 1.1 V

Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load IFSM Maximum forward surge current: 400 A

Dielectric strength Terminals to case, AC 1 minute Current 1mA Vdia ：2.75KV

Operating junction temperature Tj Operating junction temperature: 150℃

Storage temperature Tstg Storage temperature range: -40~150℃

Thermal Resistance RθJC Thermal resistance coefficient: 1.2℃/W

Package: S25VB

S25VB10 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Yangzhou Yangjie Electronic Technology Co., Ltd.
Reach Compliance Code	unknow
Configuration	BRIDGE, 4 ELEMENTS
Diode type	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1.05 V
Maximum non-repetitive peak forward current	400 A
Number of components	4
Maximum operating temperature	150 °C
Maximum output current	25 A
Maximum repetitive peak reverse voltage	100 V
surface mount	NO

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S25VB10 THRU S25VB100

桥式整流器

Bridge Rectifier

■特征

●

RRM

●

Features

25A

100V-1000V

■外½尺寸和印记

Outline Dimensions and Mark

S25VB

HOLE FOR 10# SCREW

.661(16.8)

.200(5.10)

DIA

.622(15.8)

.212(5.40)

玻璃钝化芯片

Glass passivated chip

耐正向浪涌电流½力高

High surge forward current capability

.031

(0.8)

1.263(32.1) .732(18.6)

1.224(31.1) .693(17.6)

.661(16.8)

.622(15.8)

●

■用途

●

Applications

.252(6.4)

.244(6.2)

.102(2.6)

DIA.

.087(2.4)

.578(14.7)

.539(13.7)

1.263(32.1)

1.224(31.1)

½一般电源单相桥式整流用

General purpose 1 phase Bridge

rectifier applications

.984

MAX.

(25)

.413(10.5)

.374(9.5)

Dimensions for inches and millimeters

■极限值（绝对最大额定值）

Limiting Values（Absolute Maximum Rating）

参数名称

Item

反向重复峰值电压

Repetitive Peak Reverse

Voltage

平均整流输出电流

Average Rectified Output

Current

正向（不重复）浪涌电流

Surge(Non-

epetitive)Forward Current

正向浪涌电流的平方对电流

浪涌持续时间的积分值

Current Squared Time

存储温度

Storage Temperature

结温

Junction Temperature

绝缘耐压

Dielectric Strength

符号单½

Symbol Unit

RRM

条件

Conditions

S25VB

100

200

400

600

80 100

800 1000

用散热器

Tc=85℃

60Hz正弦波，

With heatsink Tc=85℃

电阻负½½

60Hz sine

无散热器

Ta=40℃

wave, R-load Without heatsink Ta=40℃

60H

正弦波，一个周期，T

=25℃

60H

sine wave, 1 cycle, T

=25℃

1ms≤t<8.3ms Tj=25℃，单个二极管

1ms≤t<8.3ms Tj=25℃，Rating of per diode

FSM

660

-40 ~+150

-40~+150

stg

dis

℃

端子与外壳之间外加交流电，一分钟

Terminals to case，AC 1 minute

2.5

■电特性（T

a=25℃

除非另有规定）

Electrical Characteristics

（T

=25℃ Unless otherwise specified）

参数名称

Item

正向峰值电压

Peak Forward Voltage

反向峰值电流

Peak Reverse Current

热阻

Thermal Resistance

符号

单½

Symbol Unit

RRM

J-C

μA

℃/W

测试条件

Test Condition

=12.5A,

脉冲测试，单个二极管的额定值

=12.5A, Pulse measurement, Rating of per

RRM

,脉冲测试，单个二极管的额定值

RRM

, Pulse measurement, Rating of per diode

结和管壳之间

Between junction and case

最大值

Max

1.05

1.5

Document Number 0070

Rev. 1.0, 22-Sep-11

扬州扬杰电子科技股½有限公司

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

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