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2SB757

Description
Low-Power, SC70/SOT µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay
CategoryDiscrete semiconductor    The transistor   
File Size66KB,2 Pages
ManufacturerNew Jersey Semiconductor
Websitehttp://www.njsemi.com
Download Datasheet Parametric View All

2SB757 Overview

Low-Power, SC70/SOT µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay

2SB757 Parametric

Parameter NameAttribute value
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codeunknow
Maximum collector current (IC)7 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typePNP
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Transistor component materialsSILICON
Nominal transition frequency (fT)10 MHz
Base Number Matches1
J.Elieu ^s.mi-L-onaactoi
I/
loaucti, Line.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
Silicon PNP Power Transistors
2SB757
DESCRIPTION
•With TO-3PN package
•High collector current
•Wide area of safe operation
•Complement to type 2SD847
APPLICATIONS
•Audio amplifications
•Serie regulators
•General purpose power amplifiers
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
1
2
3
ABSOLUTE MAXIMUM RATINGS (Tc=25
SYMBOL
VCBO
VCEO
VEBO
Ic
IB
PC
Tj
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
c
=25
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-40
-40
-5
-15
-5
80
150
UNIT
V
V
V
A
A
W
-55-150
THERMAL CHARACTERISTICS
SYMBOL
Rth j-C
PARAMETER
Thermal resistance from junction to case
VALUE
1.56
UNIT
/W
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