THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQ3460EV
www.vishay.com
Vishay Siliconix
SPECIFICATIONS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
DS
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
GS
= 0, I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= ± 8 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 4.5 V
V
GS
= 4.5 V
V
GS
= 4.5 V
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 4.5 V
V
GS
= 2.5 V
V
GS
= 1.8 V
Forward
Transconductance
b
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
Time
c
t
d(off)
t
f
I
SM
V
SD
I
F
= 5 A, V
GS
= 0
V
DD
= 10 V, R
L
= 10
I
D
1 A, V
GEN
= 4.5 V, R
g
= 1
f = 1 MHz
V
GS
= 4.5 V
V
DS
= 10 V, I
D
= 5.1 A
V
GS
= 0 V
V
DS
= 10 V, f = 1 MHz
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay
Fall Time
c
Pulsed Current
a
Forward Voltage
-
-
-
-
-
-
6.2
-
-
-
-
-
-
848
117
68
9.3
1.1
1.4
12.4
8
8
21
8
-
0.77
1060
146
85
14
-
-
18.6
12
12
32
12
32
1.2
A
V
ns
nC
pF
V
DS
= 20 V
V
DS
= 20 V, T
J
= 125 °C
V
DS
= 20 V, T
J
= 175 °C
V
DS
5
V
I
D
= 5.1 A
I
D
= 5.1 A, T
J
= 125 °C
I
D
= 5.1 A, T
J
= 175 °C
I
D
= 4.7 A
I
D
= 2.5 A
20
0.4
-
-
-
-
10
-
-
-
-
-
-
-
0.6
-
-
-
-
-
0.025
-
-
0.027
0.031
28
-
1.0
± 100
1
50
150
-
0.030
0.045
0.053
0.034
0.038
-
S
A
μA
V
nA
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
= 15 V, I
D
= 5.1 A
Source-Drain Diode Ratings and Characteristics
b
Notes
a. Pulse test; pulse width
300 μs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S11-2359-Rev. D, 05-Dec-11
2
Document Number: 67037
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQ3460EV
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
20
V
GS
= 5.0 V thru 2.0 V
16
I
D
- Drain Current (A)
16
20
Vishay Siliconix
12
V
GS
= 1.5 V
I
D
- Drain Current (A)
12
8
8
T
C
= 25
°C
4
V
GS
= 1.0 V
0
0
1
2
3
4
V
DS
- Drain-to-Source Voltage (V)
5
4
T
C
= 125
°C
0
0.0
T
C
= - 55
°C
2.5
0.5
1.0
1.5
2.0
V
GS
-
Gate-to-Source
Voltage (V)
Output Characteristics
Transfer Characteristics
40
T
C
= - 55
°C
T
C
= 25
°C
g
fs
- Transconductance (S)
0.05
R
DS(on)
- On-Resistance (Ω)
32
0.04
V
GS
= 1.8 V
0.03
24
T
C
= 125
°C
V
GS
= 2.5 V
V
GS
= 4.5 V
0.02
16
8
0.01
0
0
1
2
3
4
5
I
D
- Drain Current (A)
6
7
0.00
0
4
8
12
I
D
- Drain Current (A)
16
20
Transconductance
On-Resistance vs. Drain Current
1500
5
I
D
= 5.1 A
V
GS
-
Gate-to-Source
Voltage (V)
1200
C - Capacitance (pF)
4
V
DS
= 10 V
900
C
iss
3
600
2
300
C
oss
0
0
C
rss
10
15
V
DS
- Drain-to-Source Voltage (V)
5
20
1
0
0
2
4
6
8
Q
g
- Total
Gate
Charge (nC)
10
12
Capacitance
Gate Charge
S11-2359-Rev. D, 05-Dec-11
3
Document Number: 67037
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQ3460EV
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
1.8
R
DS(on)
- On-Resistance (Normalized)
I
D
= 5.1 A
1.5
V
GS
= 2.5 V
10
I
S
-
Source
Current (A)
100
Vishay Siliconix
T
J
= 150
°C
1
1.2
V
GS
= 4.5 V
T
J
= 25
°C
0.1
0.9
0.01
0.6
- 50 - 25
0
25
50
75 100 125
T
J
- Junction Temperature (°C)
150
175
0.001
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
-
Source-to-Drain
Voltage (V)
1.2
On-Resistance vs. Junction Temperature
Source Drain Diode Forward Voltage
0.25
0.3
0.20
R
DS(on)
- On-Resistance (Ω)
V
GS(th)
Variance (V)
0.1
0.15
- 0.1
I
D
= 5 mA
0.10
T
J
= 150
°C
- 0.3
I
D
= 250 μA
0.05
T
J
= 25
°C
- 0.5
0.00
0
1
2
3
4
V
GS
-
Gate-to-Source
Voltage (V)
5
- 0.7
- 50 - 25
0
25
50
75 100
T
J
- Temperature (°C)
125
150
175
On-Resistance vs. Gate-to-Source Voltage
35
I
D
= 1 mA
Threshold Voltage
V
DS
- Drain-to-Source Voltage (V)
33
31
29
27
25
- 50 - 25
0
25
50
75 100 125
T
J
- Junction Temperature (°C)
150
175
Drain Source Breakdown vs. Junction Temperature
S11-2359-Rev. D, 05-Dec-11
4
Document Number: 67037
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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