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BL03N10C-6L

Description
, Diodes, Single, N, 0.2W, 100W, ±20V, 3A
CategoryDiscrete semiconductor   
File Size200KB,3 Pages
ManufacturerGalaxy Microelectronics
Download Datasheet Parametric View All

BL03N10C-6L Overview

, Diodes, Single, N, 0.2W, 100W, ±20V, 3A

BL03N10C-6L Parametric

Parameter NameAttribute value
MakerGalaxy Microelectronics
package instruction,
Reach Compliance Codeunknown
category
ConfigurationSingle
Channel PolarityN
Max PD(W)0.2
Min PD(W)100
Max VGS (V)±20
Max ID(A)3
Max IGSS(uA)±0.1
Max VGS(th) (V)2.5
RDS(on)(mΩ) @ 25℃ 10V Typ/
RDS(on)(mΩ) @ 25℃ 10V Max250
AEC QualifiedNO
Maximum operating temperature150
Minimum operating temperature-55
MSL level1
Is it lead-free?Yes
Comply with ReachYes
RoHS compliantYes
ECCN codeEAR99
Package OutlinesSOT-23-6L
Product specification
N-Channel Power Mosfet
FEATURES
BL03N10C-6L
Pb
Lead-free
Special process technology for high
ESD capability
Good stability and uniformity with high E
AS
Excellent package for good heat dissipation
Electrostatic Sensitive Devices.
APPLICATIONS
Power switching application
Hard switching and high frequency circuits
Uninterruptible power supply
SOT-23-6L
ORDERING INFORMATION
Type No.
BL03N10C
-6L
Marking
03N10
Package Code
SOT-23-6L
□:
none is for Lead Free package;
“G” is for Halogen Free package.
MAXIMUM RATING
@ Ta=25℃ unless otherwise specified
Symbol
V
DSS
V
GSS
I
D
I
DM
P
D
R
θJA
T
J
Tstg
MTM0102A
Parameter
Drain-Source voltage
Gate -Source voltage
Continuous
Drain Current
Pulsed Drain
Current
Power Dissipation
Thermal resistance,Junction-to-Ambient
Junction Temperature
Storage Temperature
Value
100
±20
3
20
0.2
250
+150
-55 to +150
Units
V
V
A
A
W
℃/W
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