IXTD10P50 datasheet, PDF - EEWORLD Datasheet

IXTD10P50: DescriptionPower Field-Effect Transistor, 500V, 0.9ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-2; CategoryDiscrete semiconductor The transistor; File Size278KB，1 Pages; ManufacturerIXYS; Environmental Compliance

Download Datasheet Parametric View All

IXTD10P50 Overview

Power Field-Effect Transistor, 500V, 0.9ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-2

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	IXYS
Parts packaging code	DIE
package instruction	DIE-2
Contacts	2
Reach Compliance Code	compliant
Other features	MEGAFET
Configuration	SINGLE
Minimum drain-source breakdown voltage	500 V
Maximum drain-source on-resistance	0.9 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-XUUC-N2
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	UNCASED CHIP
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	P-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal form	NO LEAD
Terminal location	UPPER
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON

Shortcut: L0 L1 L2 L3 L4 L5 L6 L7 L8 L9 LA LB LC LD LE LF LG LH LI LJ LK LL LM LN LO LP LQ LR LS LT LU LV LW LX LY LZ M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 MA MB MC MD ME MF MG MH MI MJ MK ML MM MN MO MP MQ MR MS MT MU MV MW MX MY MZ N0 N1 N2 N3 N4 N5 N6 N7 N8 NA NB NC ND NE NF NG NH NI NJ NK NL NM NN NO NP NQ NR NS NT NU NV NX NZ O0 O1 O2 O3 OA OB OC OD OE OF OG OH OI OJ OK OL OM ON OP OQ OR OS OT OV OX OY OZ P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 PA PB PC PD PE PF PG PH PI PJ PK PL PM PN PO PP PQ PR PS PT PU PV PW PX PY PZ Q1 Q2 Q3 Q4 Q5 Q6 Q8 Q9 QA QB QC QE QF QG QH QK QL QM QP QR QS QT QV QW QX QY R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 RA RB RC RD RE RF RG RH RI RJ RK RL RM RN RO RP RQ RR RS RT RU RV RW RX RY RZ

Popular Components