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BLF888AS

Description
UHF power LDMOS transistor
File Size444KB,17 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
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BLF888AS Overview

UHF power LDMOS transistor

BLF888A; BLF888AS
UHF power LDMOS transistor
Rev. 3 — 30 August 2011
Product data sheet
1. Product profile
1.1 General description
A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial
applications. The excellent ruggedness of this device makes it ideal for digital and analog
transmitter applications.
Table 1.
Application information
RF performance at V
DS
= 50 V unless otherwise specified.
Mode of operation
f
(MHz)
2-tone, class-AB
pulsed, class-AB
[1]
DVB-T (8k OFDM)
f
1
= 860; f
2
= 860.1
860
858
858
DVB-T (8k OFDM)
858
858
[1]
[2]
[3]
Measured at
= 10 %; t
p
= 100
s.
Measured [dBc] with delta marker at 4.3 MHz from center frequency.
PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on CCDF.
P
L(AV)
(W)
250
-
110
125
110
120
P
L(M)
(W)
-
600
-
-
-
-
G
p
(dB)
21
20
21
21
20
20
D
(%)
46
58
31
32.5
30
31
IMD3
(dBc)
32
-
-
-
-
-
IMD
shldr
(dBc)
-
-
32
[2]
30
[2]
32
[2]
31
[2]
PAR
(dB)
-
-
8.2
[3]
8.0
[3]
8.0
[3]
7.8
[3]
RF performance in a common source 860 MHz narrowband test circuit
RF performance in a common source 470 MHz to 860 MHz broadband test circuit
1.2 Features and benefits
Excellent ruggedness (VSWR
40 : 1 through all phases)
Optimum thermal behavior and reliability, R
th(j-c)
= 0.15 K/W
High power gain
High efficiency
Designed for broadband operation (470 MHz to 860 MHz)
Internal input matching for high gain and optimum broadband operation
Excellent reliability
Easy power control
Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC
1.3 Applications
Communication transmitter applications in the UHF band
Industrial applications in the UHF band

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