BLF642
Broadband power LDMOS transistor
Rev. 2 — 22 July 2011
Product data sheet
1. Product profile
1.1 General description
A 35 W LDMOS RF power transistor for broadcast transmitter and industrial applications.
The transistor is suitable for the frequency range HF to 1400 MHz. The excellent
ruggedness and broadband performance of this device makes it ideal for digital
applications.
Table 1.
Typical performance
RF performance at T
h
= 25
C in a common source test circuit.
Mode of operation
CW, class-AB
2-tone, class-AB
f
(MHz)
1300
1300
V
DS
(V)
32
32
P
L
(W)
35
17.5
G
p
(dB)
19
19
D
(%)
63
48
IMD
(dBc)
-
28
1.2 Features and benefits
CW performance at 1300 MHz, a drain-source voltage V
DS
of 32 V and a quiescent
drain current I
Dq
= 0.2 A :
Average output power = 35 W
Power gain = 19 dB
Drain efficiency = 63 %
2-tone performance at 1300 MHz, a drain-source voltage V
DS
of 32 V and a quiescent
drain current I
Dq
= 0.2 A :
Average output power = 17.5 W
Power gain = 19 dB
Drain efficiency = 48 %
Intermodulation distortion =
28
dBc
Integrated ESD protection
Excellent ruggedness
High power gain
High efficiency
Excellent reliability
Easy power control
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
NXP Semiconductors
BLF642
Broadband power LDMOS transistor
1.3 Applications
Communication transmitter applications in the HF to 1400 MHz frequency range
Industrial applications in the HF to 1400 MHz frequency range
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
drain
gate
source
[1]
Simplified outline
1
3
2
Graphic symbol
1
2
3
sym112
[1]
Connected to flange
3. Ordering information
Table 3.
Ordering information
Name Description
BLF642
-
Version
Type number Package
flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT467C
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
T
stg
T
j
Parameter
drain-source voltage
gate-source voltage
storage temperature
junction temperature
Conditions
Min
-
0.5
65
-
Max
65
+11
+150
200
Unit
V
V
C
C
5. Thermal characteristics
Table 5.
R
th(j-c)
[1]
Thermal characteristics
Conditions
T
case
= 80
C;
P
L
= 35 W
[1]
Symbol Parameter
thermal resistance from junction to case
Typ
1.6
Unit
K/W
R
th(j-c)
is measured under RF conditions.
BLF642
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 22 July 2011
2 of 12
NXP Semiconductors
BLF642
Broadband power LDMOS transistor
6. Characteristics
Table 6.
Characteristics per section
T
j
= 25
C; unless otherwise specified.
Symbol Parameter
V
GS(th)
V
GSq
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
C
iss
C
oss
C
rs
gate-source threshold voltage
gate-source quiescent voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
Conditions
V
DS
= 32 V; I
D
= 50 mA
V
DS
= 32 V; I
Dq
= 250 mA
V
GS
= 0 V; V
DS
= 32 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
=
10
V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 2.5 A
Min Typ
65
1.4
1.5
-
8.0
-
-
-
-
-
-
-
1.9
2.0
-
9.0
-
3.3
300
39
15
0.84
Max Unit
-
2.4
2.5
1.4
-
50
-
-
-
-
-
V
V
V
A
A
nA
S
m
pF
pF
pF
V
(BR)DSS
drain-source breakdown voltage V
GS
= 0 V; I
D
= 0.5 mA
drain-source on-state resistance V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 1.75 A
input capacitance
output capacitance
feedback capacitance
V
GS
= 0 V; V
DS
= 32 V;
f = 1 MHz
V
GS
= 0 V; V
DS
= 32 V;
f = 1 MHz
V
GS
= 0 V; V
DS
= 32 V;
f = 1 MHz
7. Application information
Table 7.
RF performance in a common-source class-AB circuit
T
h
= 25
C; I
Dq
= 0.2 A.
Mode of operation
CW, class-AB
f
(MHz)
1300
V
DS
(V)
32
P
L
(W)
35
G
p
(dB)
> 18
D
(%)
> 59
7.1 Ruggedness in class-AB operation
The BLF642 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1
through all phases under the following conditions: V
DS
= 32 V; f = 1300 MHz at rated load
power.
BLF642
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 22 July 2011
3 of 12
NXP Semiconductors
BLF642
Broadband power LDMOS transistor
8. Test information
8.1 RF performance
The following figures are measured in a class-AB production test circuit.
8.1.1 1-Tone CW
001aan775
001aan776
22
G
P
(dB)
20
80
η
D
(%)
22
G
P
(dB)
20
(7)
(6)
G
P
60
18
η
D
40
18
(5)
(4)
(3)
(2)
16
20
16
(1)
14
0
10
20
30
40
P
L
(W)
50
0
14
0
10
20
30
40
P
L
(W)
50
V
DS
= 32 V; I
Dq
= 200 mA; f = 1300 MHz.
V
DS
= 32 V; f = 1300 MHz.
(1) I
Dq
= 50 mA
(2) I
Dq
= 100 mA
(3) I
Dq
= 150 mA
(4) I
Dq
= 200 mA
(5) I
Dq
= 250 mA
(6) I
Dq
= 300 mA
(7) I
Dq
= 350 mA
Fig 1.
Power gain and drain efficiency as function of
load power; typical values
Fig 2.
Power gain as a function of load power;
typical values
BLF642
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 22 July 2011
4 of 12
NXP Semiconductors
BLF642
Broadband power LDMOS transistor
8.1.2 2-Tone CW
001aan777
001aan778
21
G
P
(dB)
20
80
η
D
(%)
60
0
IMD3
(dBc)
-20
G
P
19
η
D
40
(1)
(2)
-40
18
20
(3)
(4)
(5)
(6)
(7)
17
0
10
20
P
L(AV)
(W)
0
30
-60
0
10
20
P
L(AV)
(W)
30
V
DS
= 32 V; I
Dq
= 200 mA; f = 1300 MHz;
carrier spacing = 100 kHz.
V
DS
= 32 V; f = 1300 MHz; carrier spacing = 100 kHz.
(1) I
Dq
= 50 mA
(2) I
Dq
= 100 mA
(3) I
Dq
= 150 mA
(4) I
Dq
= 200 mA
(5) I
Dq
= 250 mA
(6) I
Dq
= 300 mA
(7) I
Dq
= 350 mA
Fig 3.
Power gain and drain efficiency as function of
average load power; typical values
Fig 4.
Third order intermodulation distortion as a
function of average load power; typical values
8.1.3 Pulsed CW
001aao319
22
G
p
(dB)
20
G
p
80
η
D
(%)
60
18
η
D
40
16
20
14
0
10
20
30
40
P
L
(W)
50
0
V
DS
= 32 V; I
Dq
= 200 mA; f = 1300 MHz
Fig 5.
BLF642
Power gain and drain efficiency as a function of average power; typical values
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 22 July 2011
5 of 12
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