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FCA36N60NF

Description
N-Channel MOSFET, FRFET
CategoryDiscrete semiconductor    The transistor   
File Size258KB,8 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
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FCA36N60NF Overview

N-Channel MOSFET, FRFET

FCA36N60NF Parametric

Parameter NameAttribute value
Brand NameFairchild Semiconduc
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerFairchild
Parts packaging codeTO-3PN
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Manufacturer packaging code3LD, TO3PN, PLASTIC, EIAJ SC-65, ISOLATED
Reach Compliance Codecompli
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)1800 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage600 V
Maximum drain current (Abs) (ID)34.9 A
Maximum drain current (ID)34.9 A
Maximum drain-source on-resistance0.095 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)312 W
Maximum pulsed drain current (IDM)104.7 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
FCA36N60NF N-Channel MOSFET, FRFET
February 2011
SupreMOS
TM
tm
FCA36N60NF
N-Channel MOSFET, FRFET
600V, 36A, 95mΩ
Features
• R
DS(on)
= 80mΩ ( Typ.)@ V
GS
= 10V, I
D
= 18A
• Ultra Low Gate Charge ( Typ. Qg = 86nC)
• Low Effective Output Capacitance
• 100% Avalanche Tested
• RoHS Compliant
Description
The SupreMOS MOSFET, Fairchild’s next generation of high
voltage super-junction MOSFETs, employs a deep trench filling
process that differentiates it from preceding multi-epi based tech-
nologies. By utilizing this advanced technology and precise pro-
cess control, SupreMOS provides world class Rsp, superior
switching performance and ruggedness.
This SupreMOS MOSFET fits the industry’s AC-DC SMPS
requirements for PFC, server/telecom power, FPD TV power,
ATX power, and industrial power applications.
D
G
TO-3PN
G DS
S
MOSFET Maximum Ratings
T
C
= 25
o
C unless otherwise noted*
Symbol
V
DSS
V
GSS
I
D
I
DM
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
MOSFET dv/dt Ruggedness
Power Dissipation
(T
C
= 25
o
C)
Derate above 25 C
o
Parameter
FCA36N60NF
600
±30
o
Units
V
V
A
A
mJ
A
mJ
V/ns
W
W/
o
C
o
o
Continuous (T
C
= 25 C)
Continuous (T
C
=
Pulsed
100
o
C)
(Note 1)
(Note 2)
34.9
22
104.7
1800
12
3.12
(Note 3)
50
100
312
2.6
-55 to +150
300
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
C
C
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R
θJC
R
θCS
R
θJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Heat Sink (Typical)
Thermal Resistance, Junction to Ambient
FCA36N60NF
0.40
0.24
40
o
Units
C/W
©2011 Fairchild Semiconductor Corporation
FCA36N60NF Rev. A
1
www.fairchildsemi.com
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