FCH76N60N 600V N-Channel MOSFET
FCH76N60N
N-Channel MOSFET
600V, 76A, 36mΩ
Features
• 650V @T
J
= 150
o
C
• R
DS(on)
= 28mΩ ( Typ.)@ V
GS
= 10V, I
D
= 38A
• Ultra Low Gate Charge ( Typ.Q
g
= 218nC)
• Low Effective Output Capacitance
• 100% Avalanche Tested
• RoHS Compliant
SupreMOS
TM
December 2011
Description
The SupreMOS MOSFET, Fairchild’s next generation of high
voltage super-junction MOSFETs, employs a deep trench filling
process that differentiates it from preceding multi-epi based
technologies. By utilizing this advanced technology and precise
process control, SupreMOS provides world class Rsp, superior
switching performance and ruggedness.
This SupreMOS MOSFET fits the industry’s AC-DC SMPS
requirements for PFC, server/telecom power, FPD TV power,
ATX power, and industrial power applications.
D
G
G D
S
TO-247
S
MOSFET Maximum Ratings
T
C
= 25
o
C unless otherwise noted
Symbol
V
DSS
V
GSS
I
D
I
DM
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt Ruggedness
Peak Diode Recovery dv/dt
Power Dissipation
(T
C
= 25
o
C)
- Derate above 25 C
o
Parameter
Ratings
600
±30
o
Units
V
V
A
A
mJ
A
mJ
V/ns
W
W/
o
C
o
o
-Continuous (T
C
= 25 C)
-Continuous (T
C
=
- Pulsed
76
48.1
(Note 1)
(Note 2)
228
8022
25.3
5.43
100
(Note 3)
20
543
4.34
-55 to +150
300
100
o
C)
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
C
C
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R
θJC
R
θCS
R
θJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Heat Sink (Typical)
Thermal Resistance, Junction to Ambient
Ratings
0.23
0.24
40
o
Units
C/W
©2011 Fairchild Semiconductor Corporation
FCH76N60N Rev. C1
1
www.fairchildsemi.com
FCH76N60N 600V N-Channel MOSFET
Package Marking and Ordering Information
Device Marking
FCH76N60N
Device
FCH76N60N
Package
TO-247
Reel Size
-
Tape Width
-
Quantity
30
Electrical Characteristics
T
C
= 25
o
C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
DSS
ΔBV
DSS
ΔT
J
I
DSS
I
GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
I
D
= 250μA, V
GS
= 0V, T
C
= 25
o
C
I
D
= 250μA, Referenced to 25
o
C
V
DS
= 480V, V
GS
= 0V
V
DS
= 480V, V
GS
= 0V, T
C
=
V
GS
= ±30V, V
DS
= 0V
125
o
C
600
-
-
-
-
-
0.73
-
-
-
-
-
10
100
±100
V
V/
o
C
μA
nA
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
V
GS
= V
DS
, I
D
= 250μA
V
GS
= 10V, I
D
= 38A
V
DS
= 20V, I
D
= 38A
2.0
-
-
-
28
90
4.0
36
-
V
mΩ
S
Dynamic Characteristics
C
iss
C
oss
C
rss
C
oss
C
oss
eff.
Q
g(tot)
Q
gs
Q
gd
ESR
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance(G-S)
V
DS
= 380V, I
D
= 38A,
V
GS
= 10V
Drain Open
V
DS
= 100V, V
GS
= 0V
f = 1MHz
V
DS
= 380V, V
GS
= 0V, f = 1MHz
V
DS
= 0V to 380V, V
GS
= 0V
-
-
-
-
-
-
-
(Note 4)
9310
370
3.1
195
914
218
39
66
1
12385
495
5
-
-
285
-
-
-
pF
pF
pF
pF
pF
nC
nC
nC
Ω
-
-
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V
DD
= 380V, I
D
= 38A
R
GEN
= 25Ω
(Note 4)
-
-
-
-
34
24
235
32
78
58
480
74
ns
ns
ns
ns
Drain-Source Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS
= 0V, I
SD
= 38A
V
GS
= 0V, I
SD
= 38A
dI
F
/dt = 100A/μs
-
-
-
-
-
-
-
-
612
16
76
228
1.2
-
-
A
A
V
ns
μC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. I
AS
= 25.3A, R
G
= 25Ω, Starting T
J
= 25°C
3. I
SD
≤
76A, di/dt
≤
200A/μs, V
DD
≤
380V, Starting T
J
= 25°C
4. Essentially Independent of Operating Temperature Typical Characteristics
FCH76N60N Rev. C1
2
www.fairchildsemi.com
FCH76N60N 600V N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
300
V
GS
= 15V
10V
8V
6V
5.5V
5V
4.5V
Figure 2. Transfer Characteristics
500
100
I
D
, Drain Current[A]
I
D
, Drain Current[A]
100
o
150 C
25 C
-55 C
*Notes:
1. V
DS
= 20V
2. 250
μ
s Pulse Test
o
o
10
*Notes:
1. 250
μ
s Pulse Test
10
2
0.1
2. T
C
= 25 C
o
1
V
DS
, Drain-Source Voltage[V]
10
20
1
2
4
6
V
GS
, Gate-Source Voltage[V]
8
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
50
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
400
R
DS(ON)
[
Ω
]
,
Drain-Source On-Resistance
I
S
, Reverse Drain Current [A]
45
100
o
40
V
GS
= 10V
150 C
25 C
o
35
V
GS
= 20V
10
30
*Note: T
C
= 25 C
o
*Notes:
1. V
GS
= 0V
25
0
50
100
150
I
D
, Drain Current [A]
200
250
1
0.0
2. 250
μ
s Pulse Test
0.5
1.0
V
SD
, Body Diode Forward Voltage [V]
1.5
Figure 5. Capacitance Characteristics
10
5
Figure 6. Gate Charge Characteristics
10
V
GS
, Gate-Source Voltage [V]
V
DS
= 120V
V
DS
= 300V
V
DS
= 480V
C
oss
10
Capacitances [pF]
4
C
iss
C
rss
8
10
3
6
10
2
*Note:
1. V
GS
= 0V
2. f = 1MHz
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
4
10
C
iss
= C
gs
+ C
gd
(
C
ds
= shorted
)
10
0.01
0
1
2
*Note: I
D
= 38A
0.1
1
10
100
V
DS
, Drain-Source Voltage [V]
600
0
0
60
120
180
Q
g
, Total Gate Charge [nC]
240
FCH76N60N Rev. C1
3
www.fairchildsemi.com
FCH76N60N 600V N-Channel MOSFET
Typical Performance Characteristics
(Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.2
BV
DSS
, [Normalized]
Drain-Source Breakdown Voltage
R
DS(on)
, [Normalized]
Drain-Source On-Resistance
Figure 8. On-Resistance Variation
vs. Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
*Notes:
1. V
GS
= 10V
2. I
D
= 38A
1.1
1.0
0.9
*Notes:
1. V
GS
= 0V
2. I
D
= 250
μ
A
0.8
-100
-50
0
50
100
150
o
T
J
, Junction Temperature
[
C
]
200
-50
0
50
100
150
o
T
J
, Junction Temperature
[
C
]
200
Figure 9. Maximum Safe Operating Area
1000
10
μ
s
Figure 10. Maximum Drain Current
vs. Case Temperature
80
I
D
, Drain Current [A]
100
100
μ
s
1ms
10
Operation in This Area
is Limited by R
DS(on)
10ms
DC
I
D
, Drain Current [A]
60
40
1
*Notes:
0.1
1. T
C
= 25 C
2. T
J
= 150 C
3. Single Pulse
o
o
20
0.01
1
10
100
V
DS
, Drain-Source Voltage [V]
1000
0
25
50
75
100
125
o
T
C
, Case Temperature
[
C
]
150
Figure 11. Transient Thermal Response Curve
0.3
Thermal Response
[
Z
θ
JC
]
0.1
0.5
0.2
0.1
P
DM
t
1
t
2
o
0.01
0.05
0.02
0.01
Single pulse
*Notes:
1. Z
θ
JC
(t) = 0.21 C/W Max.
2. Duty Factor, D = t
1
/t
2
3. T
JM
- T
C
= P
DM
* Z
θ
JC
(t)
0.001
-5
10
10
-4
10
10
10
Rectangular Pulse Duration [sec]
-3
-2
-1
10
0
10
1
FCH76N60N Rev. C1
4
www.fairchildsemi.com
FCH76N60N 600V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FCH76N60N Rev. C1
5
www.fairchildsemi.com
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