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SUT480H

Description
TRANSISTOR,BJT,ARRAY,COMM EMITTER,NPN,50V V(BR)CEO,150MA I(C),SOT-353
CategoryDiscrete semiconductor    The transistor   
File Size286KB,5 Pages
ManufacturerKODENSHI AUK
Websitehttp://auk.co.kr/
Download Datasheet Parametric View All

SUT480H Overview

TRANSISTOR,BJT,ARRAY,COMM EMITTER,NPN,50V V(BR)CEO,150MA I(C),SOT-353

SUT480H Parametric

Parameter NameAttribute value
MakerKODENSHI AUK
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)0.15 A
Minimum DC current gain (hFE)70
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.15 W
surface mountYES
Nominal transition frequency (fT)80 MHz
SUT480H
Epitaxial planar NPN silicon transistor
Description
Complex type bipolar transistor
Features
Small package save PCB area
Reduce quantity of parts and mounting cost
Two 2SC5343 chips in SOT-353 package
Package : SOT-353
Ordering Information
Type NO.
SUT480H
Marking
X3
Package Code
SOT-353
: Year & Week Code
Equivalent circuit & PIN Connections
Equivalent Circuit
3
2
1
PIN Connections
1.
2.
3.
4.
5.
Base 1
Emitter 1,2
Base 2
Collector 2
Collector 1
Tr2
4
Tr1
5
Absolute Maximum Ratings
[Tr1, Tr2]
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
※:
Total rating
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Rating
60
50
5
150
200
150
-55~150
Unit
V
V
V
mA
mW
°C
°C
KSD-T5R001-001
1
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