30000 W, BIDIRECTIONAL, SILICON, TVS DIODE
| Parameter Name | Attribute value |
| Maker | New Jersey Semiconductor |
| Reach Compliance Code | unknow |
| Minimum breakdown voltage | 200 V |
| Configuration | SINGLE |
| Diode component materials | SILICON |
| Diode type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Maximum non-repetitive peak reverse power dissipation | 30000 W |
| Number of components | 1 |
| Maximum operating temperature | 150 °C |
| Minimum operating temperature | -65 °C |
| polarity | BIDIRECTIONAL |
| Maximum repetitive peak reverse voltage | 180 V |
| technology | AVALANCHE |