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VIT1080CHM3-4W

Description
Dual Trench MOS Barrier Schottky Rectifier
File Size128KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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VIT1080CHM3-4W Overview

Dual Trench MOS Barrier Schottky Rectifier

New Product
VT1080C, VIT1080C
Vishay General Semiconductor
Dual Trench MOS Barrier Schottky Rectifier
Ultra Low V
F
= 0.49 V at I
F
= 3 A
TMBS
TO-220AB
K
®
FEATURES
• Trench MOS Schottky technology
TO-262AA
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder bath temperature 275 °C max. 10 s, per
JESD 22-B106
• AEC-Q101 qualified
2
VT1080C
PIN 1
PIN 3
PIN 2
CASE
3
1
VIT1080C
PIN 1
PIN 3
2
3
1
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21 definition
PIN 2
K
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
at I
F
= 5 A
T
J
max.
2x5A
80 V
80 A
0.57 V
150 °C
MECHANICAL DATA
Case:
TO-220AB and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS compliant, and
AEC-Q101 qualified
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
Polarity:
As marked
Mounting Torque:
10 in-lbs maximum
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
(fig. 1)
per device
per diode
I
F(AV)
I
FSM
dV/dt
T
J
, T
STG
SYMBOL
V
RRM
VT1080C
80
10
A
5
80
10 000
- 55 to + 150
A
V/μs
°C
VIT1080C
UNIT
V
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Voltage rate of change (rated V
R
)
Operating junction and storage temperature range
Document Number: 89237
Revision: 23-Mar-11
For technical questions within your region, please contact one of the following:
www.vishay.com
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

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Description Dual Trench MOS Barrier Schottky Rectifier Dual Trench MOS Barrier Schottky Rectifier Dual Trench MOS Barrier Schottky Rectifier Dual Trench MOS Barrier Schottky Rectifier Dual Trench MOS Barrier Schottky Rectifier

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