UNISONIC TECHNOLOGIES CO., LTD
2SC1384
NPN SILICON TRANSISTOR
DESCRIPTION
The UTC
2SC1384
is power amplifier and driver.
NPN SILICON TRANSISTOR
FEATURES
* Low V
CE(SAT)
* 2~3W output in complementary pair with 2SA684
Lead-free: 2SC1384L
Halogen-free: 2SC1384G
ORDERING INFORMATION
Normal
2SC1384-x-AB3-R
2SC1384-x-T9N-B
2SC1384-x-T9N-K
2SC1384-x-T9N-R
Ordering Number
Lead Free Plating
2SC1384L-x-AB3-R
2SC1384L-x-T9N-B
2SC1384L-x-T9N-K
2SC1384L-x-T9N-R
Halogen-Free
2SC1384G-x-AB3-R
2SC1384G-x-T9N-B
2SC1384G-x-T9N-K
2SC1384G-x-T9N-R
Package
SOT-89
TO-92NL
TO-92NL
TO-92NL
Pin Assignment
Packing
1
2
3
B
C
E Tape Reel
E
C
B
Tape Box
E
C
B
Bulk
E
C
B Tape Reel
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2SC1384
PARAMETER
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃, unless otherwise specified )
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
V
CBO
60
V
Collector-Emitter Voltage
V
CEO
50
V
Emitter-Base Voltage
V
EBO
5
V
Peak Collector Current
I
CP
1.5
A
Collector Current (DC)
I
C
1
A
Collector Dissipation (Ta=25℃)
P
C
1000
mW
Junction Temperature
T
J
125
℃
Operating Temperature
T
OPR
-20 ~ +85
℃
Storage Temperature
T
STG
-40 ~ +150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(Ta=25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector-Base Breakdown Voltage
BV
CBO
I
C
=10μA, I
E
=0
Collector-Emitter Breakdown Voltage BV
CEO
I
C
=2mA, I
B
=0
Emitter-Base Breakdown Voltage
BV
EBO
I
E
=10μA, I
C
=0
Collector Cut-Off Current
I
CBO
V
CB
=20V, I
E
=0
h
FE1
V
CE
=10V, I
C
=500mA
DC Current Gain
h
FE2
V
CE
=5V, I
B
=1A
Collector-Emitter Saturation Voltage
V
CE(SAT)
I
C
=0.5A, I
B
=50mA
Base-Emitter Saturation Voltage
V
BE(SAT)
I
C
=0.5A, I
B
=50mA
Current Gain Bandwidth Product
f
T
V
CE
=10V, I
B
=50mA
Output Capacitance
C
ob
V
CB
=10V, I
E
=0, f=1MHz
MIN
60
50
5
85
50
TYP
MAX
UNIT
V
V
V
μA
160
100
0.2
0.85
200
11
0.1
340
0.4
1.2
20
V
V
MHz
pF
CLASSIFICATION OF h
FE
RANK
RANGE
Q
85-170
R
120-240
S
170-340
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2SC1384
TYPICAL CHARACTERISTICS
Collector Current, I
C
(A)
Collector Power Dissipation, P
C
(W)
UNISONIC TECHNOLOGIES CO., LTD
Collector To Emitter Saturation Voltage,
V
CE(SAT)
(V)
Collector Current, I
C
(A)
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NPN SILICON TRANSISTOR
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TYPICAL CHARACTERISTICS(Cont.)
Transition Frequency vs.
Emitter Current
NPN SILICON TRANSISTOR
200
50
45
40
35
30
25
20
15
10
Collector Output Capacitance vs.
Collector to Base Voltage
I
E
=0
F=1MHz
Ta=25℃
180 V
CB
=10V
Ta=25℃
160
140
120
100
80
60
40
20
0
-1
-3
-10
-30
Emitter Current, I
E
(mA)
-100
5
0
3
10
30
100
1
Collector To Base Voltage, V
CB
(V)
120
100
80
60
40
20
Collector to Emitter Voltage vs.
Base to Emitter Resistance
I
C
=10mA
Ta=25℃
10
4
Collector to Emitter Current vs.
Ambient Temperature
V
CE
=10V
10
3
10
2
10
0
1
3
10 30
0.1 0.3
100
Base To Emitter Resistance, R
BE
(KΩ)
1
0
20 40 60 80 100 120 140 160
Ambient Temperature, Ta (℃)
Collector Current, I
C
(A)
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2SC1384
NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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