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BCW60DBK

Description
Small Signal Bipolar Transistor, 32V V(BR)CEO, 1-Element, NPN, Silicon,
CategoryDiscrete semiconductor    The transistor   
File Size94KB,1 Pages
ManufacturerCentral Semiconductor
Download Datasheet Parametric View All

BCW60DBK Overview

Small Signal Bipolar Transistor, 32V V(BR)CEO, 1-Element, NPN, Silicon,

BCW60DBK Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerCentral Semiconductor
Reach Compliance Codenot_compliant
Other featuresLOW NOISE
Collector-based maximum capacity2.5 pF
Collector-emitter maximum voltage32 V
ConfigurationSINGLE
Minimum DC current gain (hFE)380
JESD-30 codeR-PDSO-G3
JESD-609 codee0
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN LEAD
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
VCEsat-Max0.55 V

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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