BD680 datasheet, PDF - EEWORLD Datasheet

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BD680: DescriptionPower Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size71KB，2 Pages; ManufacturerCentral Semiconductor

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BD680 Overview

Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3

BD680 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Central Semiconductor
Parts packaging code	SIP
package instruction	PLASTIC PACKAGE-3
Contacts	3
Reach Compliance Code	not_compliant
ECCN code	EAR99
Maximum collector current (IC)	4 A
Collector-emitter maximum voltage	80 V
Configuration	DARLINGTON
Minimum DC current gain (hFE)	750
JEDEC-95 code	TO-126
JESD-30 code	R-PSFM-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Maximum power dissipation(Abs)	40 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	1 MHz

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DATA SHEET

BD676 SERIES

PNP SILICON

POWER DARLINGTON TRANSISTOR

TO-126 CASE

DESCRIPTION

The Central Semiconductor BD676 Series are PNP Silicon Darlington Power Transistors, available in the plastic TO-126

package, and are designed for audio and video output applications.

MAXIMUM RATINGS (TA=25°C unless otherwise noted)

SYMBOL

VCBO

VCEO

VEBO

IC

ICM

IB

PD

TJ,Tstg

ΘJ

C

ΘJ

A

BD676 BD678 BD680 BD682 BD684

45

5

60

5

80

5

4

6

100

40

-65 to +150

3.12

100

5

120

5

UNITS

V

A

mA

W

°C

°C/W

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Peak Collector Current

Base Current

Power Dissipation

Operating and Storage

Junction Temperature

Thermal Resistance

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)

SYMBOL

ICBO

ICEO

IEBO

BVCEO

VCE(SAT)

VBEON

hFE

hfe

fhfe

TEST CONDITIONS

MIN

TYP

MAX

0.2

2.0

0.5

5.0

2.5

UNITS

mA

V

VCB=Rated VCBO

VCB=0.6 Rated VCBO, TC=150°C

VCE=½ Rated VCEO

VEB=5.0V

IC=50mA

RATED VCEO

IC=1.5A, IB=6.0mA (BD676; IC=2.0A)

VCE=3.0V, IC=1.5A (BD676; IC=2.0A)

750

VCE=3.0V, IC=1.5A, f=1.0MHz (BD676; IC=2.0A)

10

VCE=3.0V, IC=1.5A, (BD676; IC=2.0A)

60

kHz

(SEE REVERSE SIDE)

R0

BD680 Related Products

	BD680	BD684	BD678	BD676
Description	Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3	Power Bipolar Transistor, 4A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3	Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3	Power Bipolar Transistor, 4A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3
Is it lead-free?	Contains lead	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible
Maker	Central Semiconductor	Central Semiconductor	Central Semiconductor	Central Semiconductor
Parts packaging code	SIP	SIP	SIP	SIP
package instruction	PLASTIC PACKAGE-3	PLASTIC PACKAGE-3	PLASTIC PACKAGE-3	PLASTIC PACKAGE-3
Contacts	3	3	3	3
Reach Compliance Code	not_compliant	unknown	unknown	_compli
ECCN code	EAR99	EAR99	EAR99	EAR99
Maximum collector current (IC)	4 A	4 A	4 A	4 A
Collector-emitter maximum voltage	80 V	120 V	60 V	45 V
Configuration	DARLINGTON	DARLINGTON	DARLINGTON	DARLINGTON
Minimum DC current gain (hFE)	750	750	750	750
JEDEC-95 code	TO-126	TO-126	TO-126	TO-126
JESD-30 code	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3
JESD-609 code	e0	e0	e0	e0
Number of components	1	1	1	1
Number of terminals	3	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	PNP	PNP	PNP	PNP
Maximum power dissipation(Abs)	40 W	40 W	40 W	40 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	1 MHz	-	1 MHz	1 MHz

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