Rectifier Diode, 1 Phase, 1 Element, 150A, 1000V V(RRM), Silicon, DO-8,
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | incompatible |
| Maker | Central Semiconductor |
| Reach Compliance Code | not_compliant |
| ECCN code | EAR99 |
| application | GENERAL PURPOSE |
| Shell connection | CATHODE |
| Configuration | SINGLE |
| Diode component materials | SILICON |
| Diode type | RECTIFIER DIODE |
| Maximum forward voltage (VF) | 1.1 V |
| JEDEC-95 code | DO-8 |
| JESD-30 code | O-MUPM-H1 |
| JESD-609 code | e0 |
| Maximum non-repetitive peak forward current | 3000 A |
| Number of components | 1 |
| Phase | 1 |
| Number of terminals | 1 |
| Maximum operating temperature | 200 °C |
| Maximum output current | 150 A |
| Package body material | METAL |
| Package shape | ROUND |
| Package form | POST/STUD MOUNT |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Certification status | Not Qualified |
| Maximum repetitive peak reverse voltage | 1000 V |
| surface mount | NO |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | HIGH CURRENT CABLE |
| Terminal location | UPPER |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| CR150-100 | CR150-120 | CR150-060 | |
|---|---|---|---|
| Description | Rectifier Diode, 1 Phase, 1 Element, 150A, 1000V V(RRM), Silicon, DO-8, | Rectifier Diode, 1 Phase, 1 Element, 150A, 1200V V(RRM), Silicon, DO-8, | Rectifier Diode, 1 Phase, 1 Element, 150A, 600V V(RRM), Silicon, DO-8, |
| Is it lead-free? | Contains lead | Contains lead | Contains lead |
| Is it Rohs certified? | incompatible | incompatible | incompatible |
| Maker | Central Semiconductor | Central Semiconductor | Central Semiconductor |
| Reach Compliance Code | not_compliant | not_compliant | unknown |
| ECCN code | EAR99 | EAR99 | EAR99 |
| application | GENERAL PURPOSE | GENERAL PURPOSE | GENERAL PURPOSE |
| Shell connection | CATHODE | CATHODE | CATHODE |
| Configuration | SINGLE | SINGLE | SINGLE |
| Diode component materials | SILICON | SILICON | SILICON |
| Diode type | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE |
| Maximum forward voltage (VF) | 1.1 V | 1.1 V | 1.1 V |
| JEDEC-95 code | DO-8 | DO-8 | DO-8 |
| JESD-30 code | O-MUPM-H1 | O-MUPM-H1 | O-MUPM-H1 |
| JESD-609 code | e0 | e0 | e0 |
| Maximum non-repetitive peak forward current | 3000 A | 3000 A | 3000 A |
| Number of components | 1 | 1 | 1 |
| Phase | 1 | 1 | 1 |
| Number of terminals | 1 | 1 | 1 |
| Maximum operating temperature | 200 °C | 200 °C | 200 °C |
| Maximum output current | 150 A | 150 A | 150 A |
| Package body material | METAL | METAL | METAL |
| Package shape | ROUND | ROUND | ROUND |
| Package form | POST/STUD MOUNT | POST/STUD MOUNT | POST/STUD MOUNT |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| Certification status | Not Qualified | Not Qualified | Not Qualified |
| Maximum repetitive peak reverse voltage | 1000 V | 1200 V | 600 V |
| surface mount | NO | NO | NO |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Terminal form | HIGH CURRENT CABLE | HIGH CURRENT CABLE | HIGH CURRENT CABLE |
| Terminal location | UPPER | UPPER | UPPER |
| Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |