500 mA - Fixed Output Boost Converter for Single or Dual Cell
DESCRIPTION
SiP12502 is a boost converter IC with fixed output voltage for
single or double cell NiMH or Alkaline battery pack. Featuring
with an internal low resistance power MOSFET, it is capable
of starting up with a low battery voltage of 0.85 V. It only
needs four external components (an inductor, a diode and
two capacitors) to construct a step-up converter. For best
efficiency performance, it is designed to operate in PWM
mode with a 300 kHZ switching frequency under normal load
and in PFM mode under light load. The voltage-mode control
loop is internally compensated, simplifying converter design
and reducing external parts count. It accepts input voltages
from 0.85 V to 5 V, providing fixed output voltages of 2.0 V,
3.3 V, and 5.0 V. It also features low shutdown current of
under 1 µA, over voltage protection, thermal shutdown
protection, a power good output and antiringing control to
minimize EMI.
SiP12502 is available in a lead (Pb)-free 6-pin, PowerPAK
MLP33 package and is specified to operate over the
industrial temperature range of - 40 °C to 85 °C.
FEATURES
• Voltage mode control with internal frequency
compensation
• 0.85 V to 5.0 V input voltage range
• Fixed output voltage options - 2.0 V, 3.3 V, and 5.0 V
• Other voltages available upon request
• PWM control with 300 kHz fixed switching frequency
• PFM control for light load
• Powered from the output voltage supply
• Integrated UVLO and soft-start
• Logic controlled shutdown (< 1 µA)
• 85 % typical efficiency
• Internal power MOS switch: 0.2
Ω
at 3.3 V output
• Antiringing switch to minimize EMI
• Power good output
• Shutdown input
• Minimum external components
• PowerPAK
®
MLP33-6 package, (DFN-6, 3 x 3)
• Over voltage protection
APPLICATIONS
•
•
•
•
•
•
Portable applications
Battery-powered equipment
Handheld devices
Digital cameras
Wireless handsets
LCD and OLED bias
TYPICAL APPLICATION CIRCUIT
V
IN
10 µH
10 µF
2
V
IN
XSHD
1
XSHD
LX
6
MBR0520
V
OUT
47 µF
SiP12502
3
V
OUT
GND
5
4
PGOOD
330 KΩ
PGOOD
Document Number: 73578
S09-1456-Rev. B, 03-Aug-09
www.vishay.com
1
SiP12502
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
(all voltages referenced to GND = 0 V)
Parameter
Input Voltage, V
IN
LX Voltage
Output Voltage, V
OUT
XSHD Voltage
PGOOD Voltage
Maximum Junction Temperature
Storage Temperature
Operating Junction Temperature
Power Dissipation
a
Thermal Resistance
b
PowerPAK MLP33-6 (T
A
= 70
PowerPAK MLP33-6
°C)
a
Limit
- 0.3 to 6
- 0.3 to V
OUT
+ 0.5
- 0.3 to 6
- 0.3 to V
IN
+ 0.5
- 0.3 to 6
150
- 55 to 150
125
1100
50
mW
°C/W
°C
V
Unit
Notes:
a. Derate 20 mW/°C above 70 °C.
b. Device mounted with all leads soldered or welded to PC board.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
RECOMMENDED OPERATING RANGE
(all voltages referenced to GND = 0 V)
Parameter
Input Voltage, V
IN
Output Voltage, V
OUT
XSHD Voltage
LX Voltage
PGOOD Voltage
Operating Temperature Range
Limit
0.85 to 5.0
2.0 to 5
0 to V
IN
0 to V
OUT
+ 0.5
0 to 5
- 40 to 85
°C
V
Unit
SPECIFICATIONS
Test Conditions Unless Specified
Parameter
Minimum Start-Up Voltage
Minimum Operating Voltage
d
Symbol
V
START
VH
OLD
V
IN
= 1.2 V, V
OUT
= V
nom
, T
A
= 25 °C
I
LOAD
= 1 mA
XSHD = V
IN
- 1.5
Output Voltage Accuracy
V
OUT
- 25 °C
to 85 °C
Full
UVLO
UVLO Hysteresis
Maximum PWM Duty Cycle
PWM Switching Frequency
V
UVLO
V
UVLOHYST
MAXDTY
f
OSC
Rising V
OUT
Full
Full
Full
Full
80
225
- 3.0
- 3.5
1.8
0.100
87
300
375
e
Limits
Temp.
a
Full
Min.
b
Typ.
c
0.65
0.55
+ 1.5
+ 3.0
+ 3.5
2
V
%
kHz
%
Max.
b
0.85
Unit
V
www.vishay.com
2
Document Number: 73578
S09-1456-Rev. B, 03-Aug-09
SiP12502
Vishay Siliconix
SPECIFICATIONS
Test Conditions Unless Specified
Parameter
Supply Current 1
Supply Current 2
Supply Current 3
Stand-By Current
NMOS Switch Leakage
NMOS Switch On Resistance
PWM to PFM Current Threshold
PFM to PWM Current Threshold
XSHD Input High Level
XSHD Input Low Level
Softstart Time
Over Voltage Threshold
Over Voltage Hysteresis
Thermal Shutdown
Thermal Shutdown Hysteresis
PGOOD Threshold
PGOOD Hysteresis
PGOOD Output Voltage Low
PGOOD Output Leakage Current
Symbol
I
OUT1
I
OUT2
I
OUT3
I
STB
I
LEAK
R
DS(on)
I
WTOF
I
FTOF
0.8 V
≤
V
IN
≤
0.9 V
V
XSHDH
V
XSHDL
t
START
V
OV
V
OVHYST
T
SHD
T
HYST
V
PGOOD
V
PGOODHYST
PG
GOODL
PG
GOOD
V
OUT
= 3.3 V, I
PGOOD
= 1 mA
V
PGOOD
= 5 V
Full
Full
85
V
iN
= 1.8 V
0.9 V < V
IN
≤
2 V
2 V < V
IN
≤
5 V
Full
Full
Full
Full
1.6
110
10
160
20
90
2
0.15
0.01
0.2
1
95
0.55
0.8
1.2
0.2
ms
%
°C
%
V
µA
V
V
IN
= 1.2 V, V
OUT
=
V
nome
,
T
A
= 25 °C
Temp.
a
Full
Min.
b
V
OUT
= V
nom
X 0.95
V
OUT
= 6 V, V
nom
+ 0.6 V, V
LX
> V
IN
V
OUT
= V
nom
+ 0.5 V, V
LX
< V
IN
XSHD = 0 V, not including switch leakage
LX = 5 V
V
OUT
= 3.3 V
Full
1
Full
0.2
3
22
Limits
Typ.
c
330
150
75
1
2
10
Ω
mA
µA
Max.
b
620
Unit
Notes:
a. Full = - 40 °C to 85 °C.
b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum (- 40 °C to 85 °C).
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. Minimum operating voltage is determined by the battery’s capability to provide energy as it is deeply discharged.
e. V
nom
equals voltage output for part selected.
Document Number: 73578
S09-1456-Rev. B, 03-Aug-09
www.vishay.com
3
SiP12502
Vishay Siliconix
PIN CONFIGURATION AND TRUTH TABLE
PowerPAK MLP33-6
XSHD
1
6
LX
V
IN
2
5
GND
V
OUT
3
4
PGOOD
Top View
ORDERING INFORMATION
Part Number
SiP12502DMP-20-E3
SiP12502DMP-33-E3
SiP12502DMP-50-E3
Voltage Output
2.0 V
3.3 V
5.0 V
- 40 °C to 85 °C
Temperature Range
Marking
502A
502E
502G
PIN DESCRIPTION
Pin Number
1
2
3
4
5
6
Name
XSDH
V
IN
V
OUT
PGOOD
GND
LX
Input voltage
Output of the boost converter and power source for the IC battery
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