SiB422EDK-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
Continuous Drain Current (T
J
= 150 °C)
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Pulsed Drain Current
Continuous Source-Drain Diode Current
T
C
= 25 °C
T
A
= 25 °C
T
C
= 25 °C
Maximum Power Dissipation
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
d, e
T
J
, T
stg
P
D
I
DM
I
S
I
D
Symbol
V
DS
V
GS
Limit
20
±8
9
a
9
a
7.1
b, c
5.7
b, c
25
9
a
2.1
b, c
13
8.4
2.5
b, c
1.6
b, c
- 55 to 150
260
°C
W
A
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
b, f
t
≤
5s
Steady State
Symbol
R
thJA
R
thJC
Typical
41
7.5
Maximum
51
9.5
Unit
°C/W
Notes:
a. Package limited, T
C
= 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 105 °C/W.
Document Number: 65297
S09-1919-Rev. A, 28-Sep-09
www.vishay.com
1
New Product
SiB422EDK
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 4.5 V
V
DS
= 0 V, V
GS
= ± 8 V
V
DS
= 20 V, V
GS
= 0 V
V
DS
= 20 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≥
5 V, V
GS
= 4.5 V
V
GS
= 4.5 V, I
D
= 5 A
V
GS
= 2.5 V, I
D
= 4.3 A
V
GS
= 1.8 V, I
D
= 1.5 A
V
GS
= 1.5 V, I
D
= 1 A
Forward Transconductance
a
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 5.7 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= 5.7 A, V
GS
= 0 V
0.85
15
7.5
8
15
T
C
= 25 °C
9
25
1.2
30
15
A
V
ns
nC
ns
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 10 V, R
L
= 1.8
Ω
I
D
≅
5.7 A, V
GEN
= 10 V, R
g
= 1
Ω
V
DD
= 10 V, R
L
= 1.8
Ω
I
D
≅
5.7 A, V
GEN
= 4.5 V, R
g
= 1
Ω
f = 1 MHz
0.46
V
DS
= 10 V, V
GS
= 8 V, I
D
= 7.1 A
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 7.1 A
11.5
6
0.8
1.6
2.3
0.3
0.6
3.8
1.7
0.15
0.3
5.6
1.6
4.6
0.45
0.9
6
2.6
0.25
0.45
9
2.5
µs
kΩ
18
9
nC
g
fs
V
DS
= 10 V, I
D
= 5 A
15
0.025
0.034
0.046
0.055
28
0.030
0.041
0.057
0.082
S
Ω
0.4
20
18
- 2.5
1.0
± 1.5
± 25
1
10
A
µA
V
mV/°C
V
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Drain-Source On-State Resistance
a
R
DS(on)
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 65297
S09-1919-Rev. A, 28-Sep-09
New Product
SiB422EDK
Vishay Siliconix
TYPICAL CHARACTERISTICS
T
A
= 25 °C, unless otherwise noted
80
10
-1
10
-2
I
G
- Gate Current (mA)
T
J
= 25 °C
40
I
G
- Gate Current (A)
60
10
-3
10
-4
10
-5
10
-6
10
-7
10
-8
10
-9
T
J
= 150 °C
T
J
= 25 °C
20
0
0
3
6
9
12
15
10
-10
0
3
6
9
12
15
V
GS
- Gate-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Gate Current vs. Gate-to-Source Voltage
25
V
GS
= 5
V
thru 2
V
I
D
- Drain Current (A)
10
Gate Current vs. Gate-to-Source Voltage
20
I
D
- Drain Current (A)
8
15
V
GS
= 1.5
V
6
10
4
T
C
= 25 °C
2
T
C
= 125 °C
0
0.0
T
C
= - 55 °C
0.3
0.6
0.9
1.2
1.5
5
V
GS
= 1
V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
0.10
V
GS
= 1.5
V
R
DS(on)
- On-Resistance (Ω)
0.08
V
GS
= 1.8
V
0.06
V
GS
= 2.5
V
0.04
V
GS
= 4.5
V
0.02
V
GS
- Gate-to-Source
Voltage
(V)
6
8
Transfer Characteristics
I
D
= 7.1 A
V
DS
= 7.5
V
V
DS
= 16
V
4
V
DS
= 10
V
2
0.00
0
5
10
15
20
25
0
0
2
4
6
8
10
12
I
D
- Drain Current (A)
Q
g
- Total Gate Charge (nC)
On-Resistance vs. Drain Current
Gate Charge
Document Number: 65297
S09-1919-Rev. A, 28-Sep-09
www.vishay.com
3
New Product
SiB422EDK
Vishay Siliconix
TYPICAL CHARACTERISTICS
T
A
= 25 °C, unless otherwise noted
1.6
V
GS
= 2.5
V,
4.5
V;
I
D
= 5 A
I
S
- Source Current (A)
100
1.4
R
DS(on)
- On-Resistance
10
(Normalized)
1.2
T
J
= 150 °C
T
J
= 25 °C
1
1.0
V
GS
= 1.5
V,
1.8
V;
I
D
= 1.5 A
0.8
0.6
- 50
- 25
0
25
50
75
100
125
150
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
T
J
- Junction Temperature (°C)
V
SD
- Source-to-Drain
Voltage
(V)
Normalized On-Resistance vs. Junction Temperature
0.12
20
Source-Drain Diode Forward Voltage
0.10
R
DS(on)
- On-Resistance (Ω)
15
0.08
I
D
= 1 A; T
J
= 125 °C
I
D
= 5 A; T
J
= 125 °C
Power (W)
0.06
10
0.04
I
D
= 5 A; T
J
= 25 °C
0.02
I
D
= 1 A; T
J
= 25 °C
0
0.001
5
0.00
0
1
2
3
4
5
0.01
0.1
1
Pulse (s)
10
100
1000
V
GS
- Gate-to-Source
Voltage
(V)
On-Resistance vs. Gate-to-Source Voltage
0.7
100
Single Pulse Power, Junction-to-Ambient
Limited
by
R
DS(on)
*
0.6
I
D
- Drain Current (A)
10
100
µs
1
1 ms
10 ms
100 ms
1 s, 10 s
DC
BVDSS Limited
0.1
- 50
0.01
0.1
0.5
V
GS(th)
(V)
I
D
= 250
µA
0.4
0.3
0.1
0.2
T
A
= 25 °C
Single Pulse
- 25
0
25
50
75
100
125
150
1
10
100
T
J
- Temperature (°C)
Threshold Voltage
V
DS
- Drain-to-Source
Voltage
(V)
*
V
GS
> minimum
V
GS
at
which
R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 65297
S09-1919-Rev. A, 28-Sep-09
New Product
SiB422EDK
Vishay Siliconix
TYPICAL CHARACTERISTICS
T
A
= 25 °C, unless otherwise noted
18
16
14
I
D
- Drain Current (A)
12
Po
w
er (W)
12
15
10
8
6
4
2
0
0
Package Limited
9
6
3
0
25
50
75
100
125
150
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
C
- Case Temperature (°C)
Current Derating*
Power Derating
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
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