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SI6410DQ

Description
N-Channel 30-V (D-S) MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size82KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric View All

SI6410DQ Overview

N-Channel 30-V (D-S) MOSFET

SI6410DQ Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerVishay
package instruction,
Reach Compliance Codecompli
ConfigurationSingle
Maximum drain current (Abs) (ID)7.8 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee0
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)1.5 W
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Si6410DQ
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
30
R
DS(on)
(Ω)
0.014 at V
GS
= 10 V
0.021 at V
GS
= 4.5 V
I
D
(A)
± 7.8
± 6.3
FEATURES
Halogen-free
TrenchFET
®
Power MOSFETs
RoHS
COMPLIANT
D
TSSOP-8
D
S
S
G
1
2
3
4
Top View
Ordering Information:
Si6410DQ-T1-GE3 (Lead (Pb)-free and Halogen-free)
8
D
S
S
D
S*
N-Channel MOSFET
G
* Source Pins 2, 3, 6 and 7
must be tied common.
Si6410DQ
7
6
5
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25 °C
T
A
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
Limit
30
± 20
± 7.8
± 6.2
± 30
1.5
1.5
1.0
- 55 to 150
W
°C
A
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Notes:
a. Surface Mounted on FR4 board, t
10 s.
Symbol
R
thJA
Limit
83
Unit
°C/W
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm.
Document Number: 70661
S-80682-Rev. D, 31-Mar-08
www.vishay.com
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