The Si6924AEDQ is a dual N-Channel MOSFET with ESD
protection and gate over-voltage protection circuitry
incorporated into the MOSFET. The device is designed for
use in Lithium Ion battery pack circuits. The common-drain
construction takes advantage of the typical battery pack
topology, allowing a further reduction of the device’s on-
resistance. The 2-stage input protection circuit is a unique
design, consisting of two stages of back-to-back zener
diodes separated by a resistor. The first stage diode is
designed to absorb most of the ESD energy. The second
stage diode is designed to protect the gate from any
remaining ESD energy and over-voltages above the gates
inherent safe operating range. The series resistor used to
limit the current through the second stage diode during over
voltage conditions has a maximum value which limits the
input current to
≤
10 mA at 14 V and the maximum t
off
to 12
µs. The Si6924AEDQ has been optimized as a battery or
load switch in Lithium Ion applications with the advantage of
both a 2.5 V R
DS(on)
rating and a safe 14 V gate-to-source
maximum rating.
APPLICATION CIRCUITS
ESD and
Overvoltage
Protection
ESD and
Overvoltage
Protection
G
D
R**
S
Battery Protection Circuit
**R typical value is 3.3 kΩ by design.
See Typical Characteristics,
Gate-Current vs. Gate-Source Voltage, Page 3.
*Thermal connection to drain pins is required to achieve specific performance
Figure 1. Typical Use In a Lithium Ion Battery Pack
Figure 2. Input ESD and Overvoltage Protection Circuit
Document Number: 72215
S-81056-Rev. B, 12-May-08
www.vishay.com
1
Si6924AEDQ
Vishay Siliconix
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
*D
*D
TSSOP-8
G
1
D
S
1
S
1
G
1
1
2
3
4
Top View
Ordering Information:
Si6924AEDQ-T1-GE3 (Lead (Pb)-free and Halogen-free)
8 D
7 S
2
6 S
2
5 G
2
3.3 kΩ
G
2
3.3 kΩ
Si6924AEDQ
S
1
N-Channel
N-Channel
S
2
*Thermal connection to drain pins is required to achieve specific performance.
Figure 3.
Figure 4.
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage, Source-Drain Voltage
Gate-Source Voltage
Continuous Drain-to-Source Current (T
J
= 150 °C)
a
Pulsed Drain-to-Source Current
Pulsed Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25 °C
T
A
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
1.2
1.3
0.84
- 55 to 150
4.6
3.7
20
0.9
1.0
0.64
W
°C
10 s
28
± 14
4.1
3.2
A
Steady State
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on FR4 board.
t
≤
10 s
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typical
71
96
56
Maximum
95
125
70
°C/W
Unit
www.vishay.com
2
Document Number: 72215
S-81056-Rev. B, 12-May-08
Si6924AEDQ
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
b
Drain-Source On-State Resistance
b
Forward Transconductance
b
Diode Forward Voltage
b
Dynamic
a
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 10 V, R
L
= 10
Ω
I
D
≅
1 A, V
GEN
= 4.5 V, R
G
= 6
Ω
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 4.6 A
6.5
1.2
1.5
0.95
1.4
7
3.1
1.5
2.1
11
5
µs
10
nC
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
SD
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 4.5 V
V
DS
= 0 V, V
GS
= ± 14 V
V
DS
= 22.4 V, V
GS
= 0 V
V
DS
= 22.4 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≥
5 V, V
GS
= 5 V
V
GS
=
4.5 V, I
D
= 4.6 A
V
GS
= 3.0 V, I
D
= 4.3 A
V
GS
= 2.5 V, I
D
= 4.1 A
V
DS
= 10 V, I
D
= 4.6 A
I
S
= 1.2 A, V
GS
= 0 V
10
0.022
0.025
0.029
25
0.7
1.1
0.033
0.038
0.042
S
V
Ω
0.6
1.5
±1
± 20
1
5
V
µA
mA
µA
A
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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