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SI6926ADQ-T1-GE3

Description
4100 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size230KB,11 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
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SI6926ADQ-T1-GE3 Overview

4100 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET

SI6926ADQ-T1-GE3 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerVishay
Parts packaging codeTSSOP
package instructionSMALL OUTLINE, R-PDSO-G8
Contacts8
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage20 V
Maximum drain current (Abs) (ID)4.1 A
Maximum drain current (ID)4.1 A
Maximum drain-source on-resistance0.03 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G8
JESD-609 codee3
Humidity sensitivity level1
Number of components2
Number of terminals8
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)1 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
Transistor component materialsSILICON
Si6926ADQ
Vishay Siliconix
Dual N-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
0.030 at V
GS
= 4.5 V
20
0.033 at V
GS
= 3.0 V
0.035 at V
GS
= 2.5 V
0.043 at V
GS
= 1.8 V
I
D
(A)
4.5
4.2
3.9
3.6
FEATURES
Halogen-free
RoHS
COMPLIANT
D
1
D
2
TSSOP-8
D
1
S
1
S
1
G
1
1
2
3
4
Top View
Ordering Information:
Si6926ADQ-T1-GE3 (Lead (Pb)-free and Halogen-free)
8 D
2
7 S
2
6 S
2
5 G
2
S
1
N-Channel MOSFET
S
2
N-Channel MOSFET
G
1
G
2
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
a
Pulsed Drain Current (10 µs Pulse Width)
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25 °C
T
A
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
0.83
1.0
0.64
- 55 to 150
4.5
3.6
20
0.69
0.83
0.53
W
°C
10 s
20
±8
4.1
3.3
A
Steady State
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on FR4 board, t
10 s.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 72754
S-81056-Rev. B, 12-May-08
www.vishay.com
1
t
10 s
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typical
90
126
65
Maximum
125
150
80
°C/W
Unit

SI6926ADQ-T1-GE3 Related Products

SI6926ADQ-T1-GE3 SI6926ADQ_08 SI6926ADQ
Description 4100 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET 4100 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET 4100 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
Number of components 2 2 2
Number of terminals 8 8 8
Maximum operating temperature 150 °C 150 Cel 150 Cel
surface mount YES YES YES
Terminal form GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL
Transistor component materials SILICON SILICON SILICON
Minimum breakdown voltage - 20 V 20 V
Processing package description - ROHS COMPLIANT, TSSOP-8 ROHS COMPLIANT, TSSOP-8
each_compli - Yes Yes
EU RoHS regulations - Yes Yes
state - Active Active
structure - SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
drain_current_max__abs___id_ - 4.1 A 4.1 A
Maximum leakage current - 4.1 A 4.1 A
Maximum drain on-resistance - 0.0300 ohm 0.0300 ohm
field effect transistor technology - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
jesd_30_code - R-PDSO-G8 R-PDSO-G8
jesd_609_code - e3 e3
moisture_sensitivity_level - 1 1
operating mode - ENHANCEMENT MODE ENHANCEMENT MODE
Packaging Materials - PLASTIC/EPOXY PLASTIC/EPOXY
packaging shape - RECTANGULAR RECTANGULAR
Package Size - SMALL OUTLINE SMALL OUTLINE
eak_reflow_temperature__cel_ - 260 260
larity_channel_type - N-CHANNEL N-CHANNEL
wer_dissipation_max__abs_ - 1 W 1 W
qualification_status - COMMERCIAL COMMERCIAL
sub_category - FET General Purpose Powers FET General Purpose Powers
terminal coating - MATTE TIN MATTE TIN
ime_peak_reflow_temperature_max__s_ - 40 40
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