Dual N-Channel 20 V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
V
DS
(V)
Channel-1
Channel-2
20
20
R
DS(on)
()
0.0085 at V
GS
= 10 V
0.0115 at V
GS
= 4.5 V
0.0070 at V
GS
= 10 V
0.0095 at V
GS
= 4.5 V
I
D
(A)
a
14.8
12.8
22
18.9
Q
g
(Typ.)
8.1
8.4
FEATURES
•
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFET
• 100 % R
g
Tested
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
SCHOTTKY PRODUCT SUMMARY
V
DS
(V)
20
V
SD
(V) Diode Forward Voltage
0.55 V at 2.5 A
SO-14
D
1
D
1
G
1
G
2
S
2
S
2
S
2
1
2
3
4
5
6
7
Top View
14
13
12
11
10
9
8
S
1
S
1
D
2
D
2
D
2
D
2
D
2
APPLICATIONS
I
F
(A)
2
• DC/DC Converters, Synchronous Buck Converters
- Game Stations
- Notebook PC Logic
D
1
D
2
Schottky Diode
G
1
G
2
S
1
N-Channel 1
MOSFET
S
2
N-Channel 2
MOSFET
Ordering Information:
Si4340DDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
Continuous Drain Current (T
J
= 150 °C)
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Pulsed Drain Current (t = 300 µs)
Source-Drain Current Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
T
C
= 25 °C
T
A
= 25 °C
L = 0.1 mH
T
C
= 25 °C
Maximum Power Dissipation
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Operating Junction and Storage Temperature Range
T
J
, T
stg
P
D
I
DM
I
S
I
AS
E
AS
3
1.9
2
b, c
1.3
b, c
- 55 to 150
I
D
Symbol
V
DS
V
GS
14.8
11.8
12.1
b, c
9.7
b, c
50
2.5
1.7
b, c
15
11.25
5.4
3.5
3
b, c
1.9
b, c
°C
W
mJ
Channel-1
20
± 20
22
17.6
16.3
b, c
13
b, c
60
4.5
2.5
b, c
A
Channel-2
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
b, d
Symbol
t
10 s
R
thJA
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
35
Notes:
a. Based on T
C
= 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions for channel 1 is 110 °C/W and channel 2 is 87 °C/W.
Document Number: 67583
S11-0860-Rev. A, 02-Mar-11
Channel-1
Typ.
Max.
53
62.5
42
Channel-2
Typ.
Max.
35
42
18
23
Unit
°C/W
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si4340DDY
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate Threshold Voltage
Gate-Source Leakage
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= 250 µA
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
I
D
= 25 mA
I
D
= 250 µA
I
D
= 25 mA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 20 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 20 V, V
GS
= 0 V
V
DS
= 20 V, V
GS
= 0 V, T
J
= 85 °C
V
DS
= 20 V, V
GS
= 0 V, T
J
= 85 °C
On-State Drain Current
b
I
D(on)
V
DS
5
V, V
GS
= 10 V
V
DS
5
V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 11.5 A
Drain-Source On-State Resistance
b
R
DS(on)
V
GS
= 10 V, I
D
= 15.2 A
V
GS
= 4.5 V, I
D
= 10 A
V
GS
= 4.5 V, I
D
= 14 A
Forward Transconductance
b
Dynamic
a
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
iss
C
oss
C
rss
Channel-2
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
V
DS
= 10 V, V
GS
= 10 V, I
D
= 12 A
Total Gate Charge
Q
g
V
DS
= 10 V, V
GS
= 10 V, I
D
= 12 A
Channel-1
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 12 A
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Q
gs
Q
gd
R
g
Channel-2
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 12 A
f = 1 MHz
Ch-1
Channel-1
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
862
956
280
363
116
120
17.4
17.8
8.1
8.4
2.2
2.6
2.4
2.5
2.2
2.6
4.4
5.2
26
27
12.5
12.5
nC
pF
g
fs
V
DS
= 10 V, I
D
= 11.5 A
V
DS
= 10 V, I
D
= 15.2 A
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
20
30
0.0065 0.0085
0.0060 0.0070
0.0091 0.0115
0.0077 0.0095
28
44
S
1
1
20
20
20
22
- 4.4
- 4.6
2.5
2.5
100
100
1
100
15
10 000
A
µA
V
nA
mV/°C
V
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
300 µs, duty cycle
2 %.
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Document Number: 67583
S11-0860-Rev. A, 02-Mar-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si4340DDY
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Dynamic
a
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
a
Symbol
Test Conditions
Ch-1
Channel-1
V
DD
= 10 V, R
L
= 1
I
D
10 A, V
GEN
= 4.5 V, R
g
= 1
Channel-2
V
DD
= 10 V, R
L
= 1
I
D
10 A, V
GEN
= 4.5 V, R
g
= 1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Channel-1
V
DD
= 10 V, R
L
= 1
I
D
10 A, V
GEN
= 10 V, R
g
= 1
Channel-2
V
DD
= 10 V, R
L
= 1
I
D
10 A, V
GEN
= 10 V, R
g
= 1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
I
S
= 5 A
I
S
= 2.5 A
Ch-1
Ch-2
Ch-1
Ch-2
Channel-1
I
F
= 9.2 A, dI/dt = 100 A/µs, T
J
= 25 °C
Channel-2
I
F
= 2.5 A, dI/dt = 100 A/µs, T
J
= 25 °C
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Min.
Typ.
18
20
37
34
19
21
10
10
9
9
13
13
16
15
8
8
Max.
35
40
70
65
35
40
20
20
18
18
26
26
32
30
16
16
2.5
4.5
50
60
Unit
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
ns
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
T
C
= 25 °C
A
0.76
0.43
18
18
7
7
8
10
9
9
1.2
0.55
36
36
14
14
V
ns
nC
ns
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
300 µs, duty cycle
2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 67583
S11-0860-Rev. A, 02-Mar-11
www.vishay.com
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si4340DDY
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
50
V
GS
= 10 V thru 4 V
40
I
D
- Drain Current (A)
I
D
- Drain Current (A)
8
10
30
V
GS
= 3 V
20
6
4
T
C
= 25
°C
10
V
GS
= 2 V
0
0.0
0.5
1.0
1.5
2.0
2.5
V
DS
- Drain-to-Source Voltage (V)
2
T = 125
°
C
C
0
0.0
0.8
1.6
2.4
3.2
4.0
V
GS
- Gate-to-Source Voltage (V)
T
C
= - 55
°C
Output Characteristics
0.014
1200
Transfer Characteristics
0.012
R
DS(on)
- On-Resistance (Ω)
C - Capacitance (pF)
960
C
iss
0.010
V
GS
= 4.5 V
720
0.008
480
C
oss
240
C
rss
0.006
V
GS
= 10 V
0.004
0
10
20
30
40
50
0
0
4
8
12
16
20
V
DS
- Drain-to-Source Voltage (V)
I
D
- Drain Current (A)
On-Resistance vs. Drain Current
10
I
D
= 12 A
V
GS
- Gate-to-Source Voltage (V)
8
V
DS
= 10 V
6
V
DS
= 5 V
4
V
DS
= 15 V
R
DS(on)
- On-Resistance
(Normalized)
1.4
1.6
I
D
= 11.5 A
Capacitance
V
GS
= 10 V
1.2
V
GS
= 4.5 V
1.0
2
0.8
0
0
4
8
12
16
20
0.6
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
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Document Number: 67583
S11-0860-Rev. A, 02-Mar-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si4340DDY
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
0.030
I
D
= 11.5 A
R
DS(on)
- On-Resistance (Ω)
10
I
S
- Source Current (A)
T
J
= 150
°C
1
T
J
= 25 °C
0.024
0.018
0.1
0.012
T
J
= 25
°C
T
J
= 125
°C
0.01
0.006
0.001
0.0
0.000
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
0.4
50
On-Resistance vs. Gate-to-Source Voltage
0.2
V
GS(th)
- Variance (V)
40
0
I
D
= 5 mA
- 0.2
Power (W)
150
30
20
- 0.4
I
D
= 250 μA
10
- 0.6
- 0.8
- 50
- 25
0
25
50
75
100
125
0
0.001
0.01
0.1
Time (s)
1
10
T
J
- Temperature (°C)
Threshold Voltage
100
I
DM
Limited
10
I
D
- Drain Current (A)
I
D
Limited
100 μs
1 ms
1
Limited by R
DS(on)
*
0.1
T
C
= 25
°C
Single Pulse
0.01
0.01
0.1
1
10 ms
100 ms
1s
10 s
DC
BVDSS Limited
10
100
Single Pulse Power
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 67583
S11-0860-Rev. A, 02-Mar-11
www.vishay.com
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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