d. Maximum under steady state conditions is 110 °C/W.
Document Number: 66825
S10-2005-Rev. A, 06-Sep-10
www.vishay.com
1
Si4200DY
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Symbol
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
Test Conditions
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 16 V
V
DS
= 25 V, V
GS
= 0 V
V
DS
= 25 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≥
5 V, V
GS
= 10 V
V
GS
=
10 V, I
D
= 7.3 A
V
GS
=
4.5 V, I
D
= 6.7 A
V
DS
= 10 V, I
D
= 7.3 A
Min.
25
Typ.
Max.
Unit
V
25
- 4.4
1.0
2.2
± 100
1
10
20
0.020
0.024
20
415
0.025
0.030
mV/°C
V
nA
µA
A
Ω
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
V
DS
= 13 V, V
GS
= 0 V, f = 1 MHz
V
DS
= 13 V, V
GS
= 10 V, I
D
= 7.3 A
V
DS
= 13 V, V
GS
= 4.5 V, I
D
= 7.3 A
f = 1 MHz
V
DD
= 13 V, R
L
= 2.2
Ω
I
D
≅
5.8 A, V
GEN
= 4.5 V, R
g
= 1
Ω
0.8
96
37
7.6
3.6
1.3
0.9
4.1
9
10
9
8
3
8.2
18
20
18
16
6
20
20
16
2.3
30
0.8
17
7
10
7
1.2
26
14
12
6
pF
nC
Ω
ns
V
DD
= 13 V, R
L
= 2.2
Ω
I
D
≅
5.8 A, V
GEN
= 10 V, R
g
= 1
Ω
10
11
8
T
C
= 25 °C
I
S
= 5.8 A, V
GS
= 0 V
A
V
ns
nC
ns
I
F
= 5.8 A, dI/dt = 100 A/µs, T
J
= 25 °C
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 66825
S10-2005-Rev. A, 06-Sep-10
Si4200DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
30
V
GS
= 10 V thru 4 V
24
I
D
- Drain Current (A)
I
D
- Drain Current (A)
10
8
18
V
GS
= 3 V
6
T
C
= 25 °C
4
12
6
2
T
C
= 125 °C
T
C
= - 55 °C
0
0.5
1.0
1.5
2.0
2.5
3.0
0
0
0.5
1.0
1.5
2.0
0
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
0.032
600
Transfer Characteristics
R
DS(on)
- On-Resistance (Ω)
0.027
V
GS
= 4.5 V
0.022
V
GS
= 10 V
C - Capacitance (pF)
450
C
iss
300
0.017
150
C
oss
C
rss
0.012
0
6
12
18
24
30
0
0
5
10
15
20
25
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
10
I
D
= 7.3 A
V
GS
- Gate-to-Source Voltage (V)
Capacitance
1.5
V
GS
= 4.5 V; I
D
= 6.7 A
R
DS(on)
- On-Resistance
8
V
DS
= 6.25 V
6
V
DS
= 12.5 V
4
V
DS
= 20 V
2
1.3
(Normalized)
1.1
V
GS
= 10 V; I
D
= 7.3 A
0.9
0
0
2
4
6
8
10
0.7
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 66825
S10-2005-Rev. A, 06-Sep-10
www.vishay.com
3
Si4200DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
0.08
I
D
= 7.3 A
R
DS(on)
- On-Resistance (Ω)
I
S
- Source Current (A)
T
J
= 150 °C
10
0.06
0.04
T
J
= 125 °C
T
J
= 25 °C
1
T
J
= 25 °C
0.02
0.1
0
0.5
1.0
1.5
0
0
2
4
6
8
10
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
1.8
50
On-Resistance vs. Gate-to-Source Voltage
1.6
I
D
= 250 μA
Power (W)
V
GS(th)
(V)
40
1.4
30
1.2
20
1.0
10
0.8
- 50
- 25
0
25
50
75
100
125
150
0
0.001
0.01
0.1
1
Time (s)
10
100
1000
T
J
- Temperature (°C)
Threshold Voltage
100
Limited by R
DS(on)
*
Single Pulse Power
10
I
D
- Drain Current (A)
100 μs
1
1 ms
10 ms
100 ms
0.1
T
A
= 25 °C
Single Pulse
0.01
0.1
BVDSS Limited
1s
10 s
DC
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 66825
S10-2005-Rev. A, 06-Sep-10
Si4200DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
10
8
I
D
- Drain Current (A)
Package Limited
6
4
2
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*
3.5
1.5
2.8
1.2
Power (W)
1.4
Power (W)
2.1
0.9
0.6
0.7
0.3
0
0
25
50
75
100
125
150
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
A
- Ambient Temperature (°C)
Power Derating, Junction-to-Ambient
Power Derating, Junction-to-Foot
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dis-
sipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
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