SI3586DV_09 datasheet, PDF - EEWORLD Datasheet

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SI3586DV_09: Description2900 mA, 20 V, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET; Categorysemiconductor Discrete semiconductor; File Size116KB，9 Pages; ManufacturerVishay; Websitehttp://www.vishay.com

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SI3586DV_09 Overview

2900 mA, 20 V, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET

SI3586DV_09 Parametric

Parameter Name	Attribute value
Number of terminals	6
Minimum breakdown voltage	20 V
Processing package description	ROHS COMPLIANT, TSOP-6
Lead-free	Yes
EU RoHS regulations	Yes
China RoHS regulations	Yes
state	ACTIVE
packaging shape	RECTANGULAR
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	GULL WING
terminal coating	MATTE TIN
Terminal location	DUAL
Packaging Materials	PLASTIC/EPOXY
structure	SINGLE WITH BUILT-IN DIODE
Number of components	1
transistor applications	SWITCHING
Transistor component materials	SILICON
Channel type	N-CHANNEL AND P-CHANNEL
field effect transistor technology	METAL-OXIDE SEMICONDUCTOR
operating mode	ENHANCEMENT
Transistor type	GENERAL PURPOSE SMALL SIGNAL
Maximum leakage current	2.9 A
Maximum drain on-resistance	0.0600 ohm

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Si3586DV

Vishay Siliconix

N- and P-Channel 20-V (D-S) MOSFET

PRODUCT SUMMARY

(V)

DS(on)

(Ω)

0.060 at V

= 4.5 V

N-Channel

0.070 at V

= 2.5 V

0.100 at V

= 1.8 V

0.110 at V

= - 4.5 V

P-Channel

- 20

0.145 at V

= - 2.5 V

0.220 at V

= - 1.8V

(A)

3.4

3.2

2.5

- 2.5

- 2.0

- 1.0

FEATURES

•

Halogen-free According to IEC 61249-2-21

Definition

• TrenchFET

Power MOSFET

• Fast Switching In Small Footprint

• Very Low R

DS(on)

for Increased Efficiency

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• Load Switch for Portable Devices

TSOP-6

Top View

3 mm

2.85 mm

Ordering Information:

Si3586DV-T1-E3 (Lead (Pb)-free)

Si3586DV-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS

= 25 °C, unless otherwise noted

N-Channel

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

= 150 °C)

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

Maximum Power Dissipation

= 25 °C

= 70 °C

= 25 °C

= 70 °C

Symbol

, T

stg

1.05

1.15

0.73

0.75

0.83

0.53

3.4

2.7

2.9

2.3

±8

- 1.05

1.15

0.73

- 55 to 150

- 0.75

0.83

0.53

°C

Steady State

±8

- 2.5

- 2.0

- 2.1

- 1.7

P-Channel

Steady State

- 20

Unit

Operating Junction and Storage Temperature Range

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient

Maximum Junction-to-Foot (Drain)

Note:

a. Surface Mounted on 1" x 1" FR4 board.

≤

Steady State

Symbol

thJA

thJF

Typical

130

Maximum

110

150

°C/W

Unit

Document Number: 72310

S09-2110-Rev. D, 12-Oct-09

www.vishay.com

SI3586DV_09 Related Products

	SI3586DV_09	SI3586DV
Description	2900 mA, 20 V, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET	2900 mA, 20 V, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
Number of terminals	6	6
Minimum breakdown voltage	20 V	20 V
Processing package description	ROHS COMPLIANT, TSOP-6	ROHS COMPLIANT, TSOP-6
Lead-free	Yes	Yes
EU RoHS regulations	Yes	Yes
China RoHS regulations	Yes	Yes
state	ACTIVE	ACTIVE
packaging shape	RECTANGULAR	RECTANGULAR
Package Size	SMALL OUTLINE	SMALL OUTLINE
surface mount	Yes	Yes
Terminal form	GULL WING	GULL WING
terminal coating	MATTE TIN	MATTE TIN
Terminal location	DUAL	DUAL
Packaging Materials	PLASTIC/EPOXY	PLASTIC/EPOXY
structure	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Number of components	1	1
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Channel type	N-CHANNEL AND P-CHANNEL	N-CHANNEL AND P-CHANNEL
field effect transistor technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
operating mode	ENHANCEMENT	ENHANCEMENT
Transistor type	GENERAL PURPOSE SMALL SIGNAL	GENERAL PURPOSE SMALL SIGNAL
Maximum leakage current	2.9 A	2.9 A
Maximum drain on-resistance	0.0600 ohm	0.0600 ohm

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