• Portable Devices Including PDAs, Cellular Phones and
Pagers
TSOP-6
Top V i ew
G1
1
6
D1
G
2
G
1
G2
3
4
D2
D
1
S
2
3 mm
S2
2
5
S1
2.85 mm
S
1
Ordering Information:
Si3590DV-T1-E3 (Lead (Pb)-free)
Si3590DV-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
D
2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
T
A
= 25 °C
T
A
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
1.05
1.15
0.70
3
2.3
8
0.75
0.83
0.53
- 1.05
1.15
0.70
N-Channel
10 s
Steady State
30
± 12
2.5
2.0
-2
- 1.6
-8
- 0.75
0.83
0.53
W
°C
P-Channel
10 s
Steady State
- 30
± 12
- 1.7
- 1.3
A
Unit
V
Operating Junction and Storage Temperature Range
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
t
≤
10 s
Steady State
Steady State
Symbol
R
thJA
R
thJF
N-Channel
Typ.
Max.
93
130
75
110
150
90
P-Channel
Typ.
Max.
93
130
75
110
150
90
°C/W
Unit
Document Number: 72032
S09-1927-Rev. C, 28-Sep-09
www.vishay.com
1
Si3590DV
Vishay Siliconix
SPECIFICATIONS
T
J
= 25°C, unless otherwise noted
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Symbol
Test Condition
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 12 V
V
DS
= 30 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= - 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
= - 30 V, V
GS
= 0 V, T
J
= 55 °C
On-State Drain Current
a
I
D(on)
V
DS
≥
5 V, V
GS
= 4.5 V
V
DS
≤
- 5 V, V
GS
= - 4.5 V
V
GS
= 4.5 V, I
D
= 3 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= - 4.5 V, I
D
= - 2 A
V
GS
= 2.5 V, I
D
= 2 A
V
GS
= - 2.5 V, I
D
= - 1.2 A
Forward Transconductance
a
Diode Forward Voltage
a
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
rr
P-Channel
V
DS
= - 15 V, V
GS
= - 4.5 V, I
D
= - 2 A
N-Ch
N-Channel
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 2 A
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
N-Channel
V
DD
= 15 V, R
L
= 15
Ω
I
D
≅
1 A, V
GEN
= 10 V, R
g
= 6
Ω
P-Channel
V
DD
= - 15 V, R
L
= 15
Ω
I
D
≅
- 1 A, V
GEN
= - 10 V, R
g
= 6
Ω
I
F
= 1.05 A, dI/dt = 100 A/µs
I
F
= - 1.05 A, dI/dt = 100 A/µs
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
3
3.8
0.6
0.6
1.0
1.5
5
5
12
15
13
20
7
20
15
18
8
8
23
23
23
30
12
30
25
30
ns
4.5
6
nC
g
fs
V
SD
V
DS
= 5 V, I
D
= 3 A
V
DS
= - 5 V, I
D
= - 2 A
I
S
= 1.05 A, V
GS
= 0 V
I
S
= - 1.05 A, V
GS
= 0 V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
5
-5
0.062
0.135
0.095
0.235
10
5
0.80
- 0.83
1.10
- 1.10
0.077
0.170
0.120
0.300
S
V
Ω
Min.
0.6
- 0.6
Typ.
Max.
1.5
- 1.5
± 100
± 100
1
-1
5
-5
A
µA
Unit
V
GS(th)
I
GSS
V
nA
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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