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MSS1P3U

Description
1 A, 30 V, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size87KB,4 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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MSS1P3U Overview

1 A, 30 V, SILICON, SIGNAL DIODE

MSS1P3U Parametric

Parameter NameAttribute value
MakerVishay
package instructionHALOGEN FREE AND ROHS COMPLIANT, MICROSMP, 2 PIN
Contacts2
Manufacturer packaging codeMICROSMP
Reach Compliance Codeunknow
ECCN codeEAR99
Is SamacsysN
Other featuresLOW POWER LOSS
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-PDSO-F2
JESD-609 codee3
Number of components1
Number of terminals2
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Certification statusNot Qualified
Maximum repetitive peak reverse voltage30 V
surface mountYES
technologySCHOTTKY
Terminal surfaceMATTE TIN
Terminal formFLAT
Terminal locationDUAL
Base Number Matches1
New Product
MSS1P2U, MSS1P3U
Vishay General Semiconductor
Ultra Low V
F
Surface Mount Schottky Barrier Rectifiers
FEATURES
eSMP
®
Series
• Very low profile - typical height of 0.65 mm
• Ideal for automated placement
• Low forward voltage drop, low power losses
• Caution: High reverse leakage
Top View
Bottom View
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21 definition
MicroSMP
The ultra low V
F
Schottky optimized for forward voltage drop
with high reverse current trade-off.
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
at I
F
= 1.5 A
T
J
max.
1.0 A
20 V, 30 V
30 A
0.30 V
125 °C
MECHANICAL DATA
Case:
MicroSMP
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Terminals:
Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity:
Color band denotes the cathode end
per
APPLICATIONS
Application designed and qualified for hard disc driver
where the V
F
performance and size are required. HTIR is not
a concern.
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Device marking code
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Operating junction temperature range
Storage temperature range
V
RRM
I
F(AV)
I
FSM
T
J
T
STG
SYMBOL
MSS1P2U
12U
20
1.0
30
- 55 to + 125
- 55 to + 150
MSS1P3U
13U
30
V
A
A
°C
°C
UNIT
Document Number: 89095
Revision: 19-Apr-11
For technical questions within your region, please contact one of the following:
www.vishay.com
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

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