INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Darlingtion Power Transistor
MJ3040
DESCRIPTION
·Built-in
Base-Emitter Shunt Resistors
·High
DC current gain-
h
FE
= 100 (Min) @ I
C
=2.5A
·Collector-Emitter
Sustaining Voltage-
V
CEO(SUS)
=300V(Min)
APPLICATIONS
·Developed
for line operated amplifier, series pass and
Switching regulator applications.
ABSOLUTE MAXIMUM RATINGS(T
C
=25℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation@T
C
=25℃
Junction Temperature
Storage Temperature
VALUE
400
300
8
10
175
200
-55~200
UNIT
V
V
V
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance, Junction to Case
MAX
1.0
UNIT
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Darlingtion Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
MJ3040
MAX
UNIT
V
CEO(SUS)
Collector-Emitter Sustaining Voltage
I
C
= 100mA; I
B
= 0
300
V
V
CE
(sat)
-1
Collector-Emitter Saturation Voltage
I
C
=2.5A; I
B
=50mA
2.2
V
V
CE
(sat)
-2
Collector-Emitter Saturation Voltage
I
C
=5A; I
B
=400mA
2.5
V
V
BE
(on)
I
CBO
Base-Emitter On voltage
I
C
=2.5A ; V
CE
=5V
V
CE
=400V; I
E
= 0
V
CE
=400V; I
E
= 0, T
C
=100℃
V
EB
= 5V; I
C
= 0
2.5
1.0
5.0
40
V
Collector Cutoff current
mA
I
EBO
Emitter Cut-off current
mA
h
FE-1
DC Current Gain
I
C
=2.5A ; V
CE
=5V
100
h
FE-2
DC Current Gain
I
C
=5A ; V
CE
=5V
25
isc Website：www.iscsemi.cn
2
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