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2SJ0672

Description
Small Signal Field-Effect Transistor, 0.1A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SSSMINI3-F1, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size54KB,2 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Download Datasheet Parametric View All

2SJ0672 Overview

Small Signal Field-Effect Transistor, 0.1A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SSSMINI3-F1, 3 PIN

2SJ0672 Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-PDSO-F3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationSINGLE
Minimum drain-source breakdown voltage30 V
Maximum drain current (ID)0.1 A
Maximum drain-source on-resistance45 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-F3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeP-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
Silicon MOSFETs (Small Signal)
2SJ0672
Silicon P-channel MOSFET
Unit: mm
For switching circuits
Features
Ultra small package switching MOSFETs
SSS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing.
0.33
+0.05
–0.02
3
0.10
+0.05
–0.02
(0.40) (0.40)
0.80
±0.05
1.20
±0.05
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Drain-source voltage
Gate-source voltage (Drain open)
Drain current
Peak drain current
Power dissipation
Channel temperature
Storage temperature
Symbol
V
DS
V
GSO
I
D
I
DP
P
D
T
ch
T
stg
Rating
−30
±7
−100
−200
100
125
−55
to
+125
Unit
V
V
mA
mA
mW
°C
°C
0.15 min.
0.23
+0.05
–0.02
1
2
0 to 0.01
0.52
±0.03
1: Gate
2: Source
3: Drain
SSSMini3-F1 Package
Marking Symbol: 5M
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Drain-source surrender voltage
Drain-source cutoff current
Gate-source cutoff current
Gate threshold voltage
Forward transfer admittance
Drain-source ON resistance
Short-circuit forward transfer
capacitance (Common source)
Short-circuit output capacitance
(Common source)
Reverse transfer capacitance (Common source)
Turn-on time
*
Turn-off time
*
Symbol
V
DSS
I
DSS
I
GSS
V
th
Y
fs
R
DS(on)
C
iss
C
oss
C
rss
t
on
t
off
V
DD
= −3
V, V
GS
=
0 V
∼ −3
V
I
D
= −10
mA
V
DD
= −3
V, V
GS
= −3
V
0 V
I
D
= −10
mA
Conditions
I
D
= −10 µA,
V
GS
=
0
V
DS
= −20
V, V
GS
=
0
V
GS
= ±7
V, V
DS
=
0
V
DS
= −3.0
V, I
D
= −1.0 µA
V
DS
=
3 V, I
D
=
10 mA, f = 1 kHz
V
GS
= −2.5
V, I
D
= −10
mA
V
GS
= −4.0
V, I
D
= −10
mA
V
DS
= −3
V, V
GS
=
0, f = 1 MHz
0.5
20
−1.0
35
20
15
10
7
3
850
850
ns
ns
45
30
pF
Min
−30
0.1
±10
−1.5
Typ
Max
Unit
V
µA
µA
V
mS
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: t
on
, t
off
test circuit
V
OUT
280
10%
90%
90%
10%
t
on
Publication date: November 2004
SJF00041AED
V
GS
100
µF
V
GS
=
0 to
−3
V
50
V
DD
= −3
V
V
OUT
t
off
0.15 max.
0.15 min.
0.80
±0.05
1.20
±0.05
1
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