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2SC5162TL/P

Description
Small Signal Bipolar Transistor, 1A I(C), 600V V(BR)CEO, 1-Element, NPN, Silicon
CategoryDiscrete semiconductor    The transistor   
File Size117KB,3 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Download Datasheet Parametric View All

2SC5162TL/P Overview

Small Signal Bipolar Transistor, 1A I(C), 600V V(BR)CEO, 1-Element, NPN, Silicon

2SC5162TL/P Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-PSSO-G2
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)1 A
Collector-emitter maximum voltage600 V
ConfigurationSINGLE
Minimum DC current gain (hFE)82
JESD-30 codeR-PSSO-G2
Number of components1
Number of terminals2
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Maximum power consumption environment10 W
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
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