SIHL510STRL-GE3 datasheet, PDF

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SIHL510STRL-GE3: Description5.6 A, 100 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB; CategoryDiscrete semiconductor The transistor; File Size280KB，9 Pages; ManufacturerVishay; Websitehttp://www.vishay.com; Environmental Compliance

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SIHL510STRL-GE3 Overview

5.6 A, 100 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB

SIHL510STRL-GE3 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Parts packaging code	D2PAK
package instruction	SMALL OUTLINE, R-PSSO-G2
Contacts	4
Reach Compliance Code	unknow
ECCN code	EAR99
Other features	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Avalanche Energy Efficiency Rating (Eas)	100 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V
Maximum drain current (Abs) (ID)	5.6 A
Maximum drain current (ID)	5.6 A
Maximum drain-source on-resistance	0.54 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-263AB
JESD-30 code	R-PSSO-G2
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	43 W
Maximum pulsed drain current (IDM)	18 A
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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IRL510S, SiHL510S

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

(V)

DS(on)

()

(Max.) (nC)

(nC)

Configuration

= 5 V

6.1

2.6

3.3

Single

100

0.54

•

Halogen-free According to IEC 61249-2-21

Definition

• Surface Mount

• Available in Tape and Reel

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• Logic-Level Gate Drive

• R

DS(on)

Specified at V

= 4 V and 5 V

• 175 °C Operating Temperature

• Compliant to RoHS Directive 2002/95/EC

FEATURES

PAK

(TO-263)

DESCRIPTION

G D

N-Channel MOSFET

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The D

PAK (TO-263) is a surface mount power package

capable of accommodating die size up to HEX-4. It provides

the highest power capability and the lowest possible

on-resistance in any existing surface mount package. The

PAK (TO-263) is suitable for high current applications

because of its low internal connection resistance and can

dissipate up to 2.0 W in a typical surface mount application.

ORDERING INFORMATION

Package

Lead (Pb)-free and Halogen-free

Lead (Pb)-free

Note

a. See device orientation.

PAK (TO-263)

SiHL510S-GE3

IRL510SPbF

SiHL510S-E3

PAK (TO-263)

SiHL510STRL-GE3

IRL510STRLPbF

SiHL510STL-E3

ABSOLUTE MAXIMUM RATINGS

= 25 °C, unless otherwise noted)

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Current

at 5 V

= 25 °C

= 100 °C

SYMBOL

LIMIT

100

± 10

5.6

4.0

0.29

0.025

100

5.6

4.3

3.7

5.5

- 55 to + 175

300

UNIT

Pulsed Drain

Linear Derating Factor

Linear Derating Factor (PCB Mount)

Single Pulse Avalanche Energy

Avalanche Current

Repetiitive Avalanche Energy

Maximum Power Dissipation

= 25 °C

Maximum Power Dissipation (PCB Mount)

dV/dt

Peak Diode Recovery dV/dt

Operating Junction and Storage Temperature Range

, T

stg

Soldering Recommendations (Peak Temperature)

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V

= 25 V, starting T

= 25 °C, L = 4.8 mH, R

= 25

,

= 5.6 A (see fig. 12).

c. I



5.6 A, dI/dt



75 A/μs, V



, T



175 °C.

d. 1.6 mm from case.

e. When mounted on 1" square PCB (FR-4 or G-10 material).

W/°C

V/ns

°C

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 90380

S11-1045-Rev. C, 30-May-11

www.vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

SIHL510STRL-GE3 Related Products

	SIHL510STRL-GE3	SIHL510S	SIHL510S-E3	SIHL510S-GE3	SIHL510STL-E3
Description	5.6 A, 100 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB	5.6 A, 100 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB	5.6 A, 100 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB	5.6 A, 100 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB	5.6 A, 100 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
Is it lead-free?	Lead free	Contains lead	Lead free	Lead free	Lead free
Is it Rohs certified?	conform to	incompatible	conform to	conform to	conform to
Parts packaging code	D2PAK	D2PAK	D2PAK	D2PAK	D2PAK
package instruction	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2
Contacts	4	4	4	4	4
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99
Other features	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Avalanche Energy Efficiency Rating (Eas)	100 mJ	100 mJ	100 mJ	100 mJ	100 mJ
Shell connection	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V	100 V	100 V	100 V	100 V
Maximum drain current (Abs) (ID)	5.6 A	5.6 A	5.6 A	5.6 A	5.6 A
Maximum drain current (ID)	5.6 A	5.6 A	5.6 A	5.6 A	5.6 A
Maximum drain-source on-resistance	0.54 Ω	0.54 Ω	0.54 Ω	0.54 Ω	0.54 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-263AB	TO-263AB	TO-263AB	TO-263AB	TO-263AB
JESD-30 code	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2
Number of components	1	1	1	1	1
Number of terminals	2	2	2	2	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	175 °C	175 °C	175 °C	175 °C	175 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	240	260	260	260
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	43 W	43 W	43 W	43 W	43 W
Maximum pulsed drain current (IDM)	18 A	18 A	18 A	18 A	18 A
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	40	30	40	40	40
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON
Base Number Matches	1	1	1	1	1
JESD-609 code	-	e0	e3	-	e3
Terminal surface	-	Tin/Lead (Sn/Pb)	Matte Tin (Sn)	-	Matte Tin (Sn)

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