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SIHLZ34L-E3

Description
Power MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size389KB,9 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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SIHLZ34L-E3 Overview

Power MOSFET

SIHLZ34L-E3 Parametric

Parameter NameAttribute value
MakerVishay
package instruction,
Reach Compliance Codeunknow
ConfigurationSingle
Maximum drain current (Abs) (ID)30 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum operating temperature175 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)88 W
surface mountNO
IRLZ34S, IRLZ34L, SiHLZ34S, SiHLZ34L
www.vishay.com
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
()
Q
g
max. (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 5 V
35
7.1
25
Single
D
FEATURES
60
0.05
Advanced process technology
Surface mount (IRLZ34S, SiHLZ34S)
Low-profile through-hole (IRLZ34L, SiHLZ34L)
Available
175 °C operating temperature
Fast switching
Available
Fully avalanche rated
Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
I
2
PAK
(TO-262)
D
2
PAK (TO-263)
Note
*
This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.
G
DESCRIPTION
Third generation power MOSFETs from Vishay utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are known for, provides the designer with
an extremely efficient and reliable device for use in a wide
variety of applications.
The D
2
PAK is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D
2
PAK is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2.0 W in a typical surface mount application.
The through-hole version (IRLZ34L, SiHLZ34L) is available
for low-profile applications.
G
G
D
S
D
S
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
D
2
PAK (TO-263)
SiHLZ34S-GE3
IRLZ34SPbF
I
2
PAK (TO-262)
-
IRLZ34LPbF
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain
Current
a
V
GS
at 5 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
E
AS
T
C
= 25 °C
T
A
= 25 °C
P
D
dV/dt
T
J
, T
stg
for 10 s
LIMIT
60
± 10
30
21
110
0.59
128
88
3.7
4.5
-55 to +175
300
W/°C
mJ
W
V/ns
°C
A
UNIT
V
Linear Derating Factor
Single Pulse Avalanche Energy
b
Maximum Power Dissipation
Maximum Power Dissipation (PCB mount)
e
Peak Diode Recovery dV/dt
c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak temperature)
d
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 25 V, Starting T
J
= 25 °C, L = 285 μH, R
g
= 25
,
I
AS
= 30 A (see fig. 12).
c. I
SD
30 A, dI/dt
200 A/μs, V
DD
V
DS
, T
J
175 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
S16-0015-Rev. E, 18-Jan-16
Document Number: 90418
1
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

SIHLZ34L-E3 Related Products

SIHLZ34L-E3 SIHLZ34L SIHLZ34S SIHLZ34S-GE3 IRLZ34L IRLZ34LPBF IRLZ34STRL IRLZ34STRR
Description Power MOSFET Power MOSFET Power MOSFET Power MOSFET Power MOSFET Power MOSFET MOSFET N-CH 60V 30A D2PAK MOSFET N-CH 60V 30A D2PAK
Maker Vishay Vishay Vishay Vishay Vishay Vishay Vishay Vishay
package instruction , IN-LINE, R-PSIP-T3 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code unknow unknow unknow unknow unknown compliant unknown unknown
Configuration Single SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Maximum drain current (Abs) (ID) 30 A 30 A 30 A 30 A 30 A 30 A 30 A 30 A
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Maximum operating temperature 175 °C 175 °C 175 °C 175 °C 175 °C 175 °C 175 °C 175 °C
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 88 W 88 W 88 W 88 W 88 W 88 W 88 W 88 W
surface mount NO NO YES YES NO NO YES YES
Is it lead-free? - Contains lead Contains lead Lead free - Lead free Contains lead Contains lead
Is it Rohs certified? - incompatible incompatible conform to incompatible conform to incompatible incompatible
Parts packaging code - TO-262AA D2PAK D2PAK TO-262AA TO-262AA - -
Contacts - 3 4 4 3 3 3 3
ECCN code - EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Other features - AVALANCHE RATED, HIGH RELIABILITY AVALANCHE RATED, HIGH RELIABILITY AVALANCHE RATED, HIGH RELIABILITY AVALANCHE RATED AVALANCHE RATED, HIGH RELIABILITY AVALANCHE RATED AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas) - 128 mJ 128 mJ 128 mJ 220 mJ 220 mJ 220 mJ 220 mJ
Shell connection - DRAIN DRAIN - DRAIN DRAIN DRAIN DRAIN
Minimum drain-source breakdown voltage - 60 V 60 V 60 V 60 V 60 V 60 V 60 V
Maximum drain current (ID) - 30 A 30 A 30 A 30 A 30 A 30 A 30 A
Maximum drain-source on-resistance - 0.05 Ω 0.05 Ω 0.05 Ω 0.05 Ω 0.05 Ω 0.05 Ω 0.05 Ω
JEDEC-95 code - TO-262AA TO-263AB TO-263AB TO-262AA TO-262AA - -
JESD-30 code - R-PSIP-T3 R-PSSO-G2 R-PSSO-G2 R-PSIP-T3 R-PSIP-T3 R-PSSO-G2 R-PSSO-G2
Number of components - 1 1 1 1 1 1 1
Number of terminals - 3 2 2 3 3 2 2
Operating mode - ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form - IN-LINE SMALL OUTLINE SMALL OUTLINE IN-LINE IN-LINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) - 240 240 260 NOT SPECIFIED NOT SPECIFIED 225 225
Maximum pulsed drain current (IDM) - 110 A 110 A 110 A 110 A 110 A 110 A 110 A
Certification status - Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Terminal form - THROUGH-HOLE GULL WING GULL WING THROUGH-HOLE THROUGH-HOLE GULL WING GULL WING
Terminal location - SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature - 30 30 40 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications - SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials - SILICON SILICON SILICON SILICON SILICON SILICON SILICON
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