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GI911

Description
3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD
CategoryDiscrete semiconductor    diode   
File Size68KB,4 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric Compare View All

GI911 Overview

3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD

GI911 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerVishay
Reach Compliance Codeunknow
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.25 V
Number of components1
Maximum operating temperature150 °C
Maximum output current3 A
Maximum repetitive peak reverse voltage100 V
Maximum reverse recovery time0.75 µs
surface mountNO
GI910 thru GI917
Vishay General Semiconductor
Medium Switching Plastic Rectifier
FEATURES
• Fast switching for high efficiency
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
DO-201AD
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
t
rr
I
R
V
F
T
J
max.
3.0 A
50 V to 800 V
100 A
750 ns
10 μA
1.25 V
150 °C
For use in fast switching rectification of power supply,
inverters, converters and freewheeling diodes for consumer
and telecommunication.
Note
• These devices are not AEC-Q101 qualified.
MECHANICAL DATA
Case:
DO-201AD, molded epoxy body
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals:
Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity:
Color band denotes cathode end
per
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375" (9.5 mm) lead length at T
A
= 90 °C
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Operating junction and storage temperature range
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
T
J
, T
STG
GI910
50
35
50
GI911
100
70
100
GI912
200
140
200
3.0
100
- 50 to + 150
GI914
400
280
400
GI916
600
420
600
GI917
800
560
800
UNIT
V
V
V
A
A
°C
Document Number: 88631
Revision: 10-Nov-09
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1

GI911 Related Products

GI911 GI910 GI912 GI914 GI916 GI917
Description 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 600 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD
Is it Rohs certified? incompatible incompatible incompatible - incompatible incompatible
Reach Compliance Code unknow unknown unknow - unknow unknow
Configuration SINGLE SINGLE SINGLE - SINGLE SINGLE
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE - RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.25 V 1.25 V 1.25 V - 1.25 V 1.25 V
Number of components 1 1 1 - 1 1
Maximum operating temperature 150 °C 150 °C 150 °C - 150 °C 150 °C
Maximum output current 3 A 3 A 3 A - 3 A 3 A
Maximum repetitive peak reverse voltage 100 V 50 V 200 V - 600 V 800 V
Maximum reverse recovery time 0.75 µs 0.75 µs 0.75 µs - 0.75 µs 0.75 µs
surface mount NO NO NO - NO NO
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