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2SC1965A

Description
RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, METAL, TC-17, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size71KB,1 Pages
ManufacturerMitsubishi
Websitehttp://www.mitsubishielectric.com/semiconductors/
Download Datasheet Parametric Compare View All

2SC1965A Overview

RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, METAL, TC-17, 3 PIN

2SC1965A Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionFLANGE MOUNT, O-MBFM-P2
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Shell connectionEMITTER
Maximum collector current (IC)2 A
Collector-emitter maximum voltage17 V
ConfigurationSINGLE
highest frequency bandVERY HIGH FREQUENCY BAND
JESD-30 codeO-MBFM-P2
JESD-609 codee0
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)15 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formPIN/PEG
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1

2SC1965A Related Products

2SC1965A 2SC1965
Description RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, METAL, TC-17, 3 PIN RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN
package instruction FLANGE MOUNT, O-MBFM-P2 FLANGE MOUNT, O-MBFM-P3
Reach Compliance Code unknow unknow
ECCN code EAR99 EAR99
Shell connection EMITTER EMITTER
Maximum collector current (IC) 2 A 1 A
Collector-emitter maximum voltage 17 V 17 V
Configuration SINGLE SINGLE
highest frequency band VERY HIGH FREQUENCY BAND VERY HIGH FREQUENCY BAND
JESD-30 code O-MBFM-P2 O-MBFM-P3
Number of components 1 1
Number of terminals 2 3
Maximum operating temperature 175 °C 175 °C
Package body material METAL METAL
Package shape ROUND ROUND
Package form FLANGE MOUNT FLANGE MOUNT
Polarity/channel type NPN NPN
Maximum power dissipation(Abs) 15 W 1.5 W
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal form PIN/PEG PIN/PEG
Terminal location BOTTOM BOTTOM
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
Base Number Matches 1 1
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