VS-FB190SA10
Vishay Semiconductors
Power MOSFET, 190 A
FEATURES
• Fully isolated package
• Very low on-resistance
• Fully avalanche rated
• Dynamic dV/dt rating
• Low drain to case capacitance
SOT-227
• Low internal inductance
• Optimized for SMPS applications
• Easy to use and parallel
• Industry standard outline
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for industrial level
PRODUCT SUMMARY
V
DSS
I
D
DC
R
DS(on)
Type
Package
100 V
190 A
0.0065
Modules - MOSFET
SOT-227
DESCRIPTION
High current density power MOSFETs are paralleled into a
compact, high power module providing the best
combination of switching, ruggedized design, very low
on-resistance and cost effectiveness.
The isolated SOT-227 package is preferred for all
commercial-industrial applications at power dissipation
levels to approximately higher than 500 W. The low thermal
resistance and easy connection to the SOT-227 package
contribute to its universal acceptance throughout the
industry.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Continuous drain current at V
GS
10 V
Pulsed drain current
Power dissipation
Linear derating factor
Gate to source voltage
Single pulse avalanche energy
Avalanche current
Repetitive avalanche energy
Peak diode recovery dV/dt
Operating junction and storage temperature range
Insulation withstand voltage (AC-RMS)
Mounting torque
V
GS
E
AS (2)
I
AR (1)
E
AR (1)
dV/dt
(3)
T
J
, T
Stg
V
ISO
M4 screw
SYMBOL
I
D
I
DM
P
D
T
C
= 25 °C
TEST CONDITIONS
T
C
= 40 °C
T
C
= 100 °C
MAX.
190
130
720
568
2.7
± 20
700
180
48
5.7
- 55 to + 150
2.5
1.3
W
W/°C
V
mJ
A
mJ
V/ns
°C
kV
Nm
A
UNITS
Notes
(1)
Repetitive rating; pulse width limited by maximum junction temperature.
(2)
Starting T = 25 °C, L = 43 μH, R = 25
,
I
J
g
AS
= 180 A.
(3)
I
SD
180 A, dI/dt
83 A/μs, V
DD
V
(BR)DSS
, T
J
150 °C.
Document Number: 93459
Revision: 12-Apr-11
For technical questions, contact:
indmodules@vishay.com
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-FB190SA10
Vishay Semiconductors
Power MOSFET, 190 A
THERMAL RESISTANCE
PARAMETER
Junction to case
Case to heatsink, flat, greased surface
SYMBOL
R
thJC
R
thCS
MIN.
-
-
TYP.
-
0.05
MAX.
0.22
-
UNITS
°C/W
ELECTRICAL CHARACTERISTICS
(T
J
= 25 °C unless otherwise noted)
PARAMETER
Drain to source breakdown voltage
Breakdown voltage temperature
coefficient
Static drain to source on-resistance
Gate threshold voltage
Forward transconductance
Drain to source leakage current
SYMBOL
V
(BR)DSS
V
(BR)DSS
/T
J
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
S
C
iss
C
oss
C
rss
TEST CONDITIONS
V
GS
= 0 V, I
D
= 250 μA
Reference to 25 °C, I
D
= 1 mA
V
GS
= 10 V, I
D
= 180 A
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 25 V, I
D
= 180 A
V
DS
= 100 V, V
GS
= 0 V
V
DS
= 80 V, V
GS
= 0 V, T
J
= 125 °C
V
GS
= 20 V
V
GS
= - 20 V
I
D
= 180 A
V
DS
= 80 V
V
GS
= 10 V
V
DD
= 50 V
I
D
= 180 A
R
g
= 2.0(internal)
R
D
= 0.27
Between lead, and center of die contact
V
GS
= 0 V
V
DS
= 25 V
f = 1.0 MHz
MIN.
100
-
-
2.0
93
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
-
0.093
0.0054
3.3
-
-
-
-
-
250
40
110
45
351
181
335
5.0
10 700
2800
1300
MAX.
-
-
0.0065
4.35
-
50
500
200
- 200
-
-
-
-
-
-
-
-
-
-
-
pF
nH
ns
nC
UNITS
V
V/°C
V
S
μA
Gate to source forward leakage
Total gate charge
Gate to source charge
Gate to drain ("Miller") charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Internal source inductance
Input capacitance
Output capacitance
Reverse transfer capacitance
nA
SOURCE-DRAIN RATINGS AND CHARACTERISTICS
PARAMETER
Continuous source current
(body diode)
Pulsed source current (body diode)
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Forward turn-on time
SYMBOL
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
TEST CONDITIONS
D
MIN.
-
-
S
TYP.
-
-
1.0
300
2.6
MAX.
190
UNITS
MOSFET symbol
showing the integral
reverse p-n junction diode.
A
G
740
1.3
-
-
V
ns
μC
T
J
= 25 °C, I
S
= 180 A, V
GS
= 0 V
T
J
= 25 °C, I
F
= 180 A, dI/dt = 100 A/μs
-
-
-
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+ L
D
)
www.vishay.com
2
For technical questions, contact:
indmodules@vishay.com
Document Number: 93459
Revision: 12-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-FB190SA10
Power MOSFET, 190 A
Vishay Semiconductors
2.5
1000
TOP
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
, Drain-to-Source Current (A)
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
I
D
= 180A
2.0
100
1.5
4.5V
10
1.0
0.5
1
0.1
20µs PULSE WIDTH
T
J
= 25
°
C
1
10
100
0.0
-60 -40 -20
V
GS
= 10V
0
20
40
60
80 100 120 140 160
V
DS
, Drain-to-Source Voltage (V)
T
J
, Junction Temperature(
°
C)
Fig. 1 - Typical Output Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
1000
20000
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
I
D
, Drain-to-Source Current (A)
V
GS
=
C
iss
=
C
rss
=
C
oss
=
0V,
f = 1MHz
C
gs
+ C
gd ,
C
ds
SHORTED
C
gd
C
ds
+ C
gd
C, Capacitance (pF)
15000
100
C
iss
10000
4.5V
C
oss
5000
10
C
rss
1
0.1
20μs PULSE WIDTH
T
J
= 150
°
C
1
10
100
0
1
10
100
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
Fig. 5 - Typical Capacitance vs.
Drain to Source Voltage
20
1000
I
D
= 180 A
V
DS
= 80V
V
DS
= 50V
V
DS
= 20V
I
D
, Drain-to-Source Current (A)
T
J
= 150
°
C
V
GS
, Gate-to-Source Voltage (V)
V DS = 25V
20µs PULSE WIDTH
15
100
T
J
= 25
°
C
10
10
5
1
4
5
6
7
0
10
0
50
100
150
200
FOR TEST CIRCUIT
SEE FIGURE 13
250
300
350
400
8
9
V
GS
, Gate-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig. 3 - Typical Transfer Characteristics
Fig. 6 - Typical Gate Charge vs.
Gate to Source Voltage
Document Number: 93459
Revision: 12-Apr-11
For technical questions, contact:
indmodules@vishay.com
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-FB190SA10
Vishay Semiconductors
1000
Power MOSFET, 190 A
175
Allowable Case Temperature (°C)
I
SD
, Reverse Drain Current (A)
100
T
J
= 150
°
C
150
125
DC
100
10
T
J
= 25
°
C
1
75
50
0.1
0.2
V
GS
= 0 V
0.6
1.0
1.4
1.8
25
0
25
50
75
100
125
150
175
200
V
SD
,Source-to-Drain Voltage (V)
I
D
, Drain Current in DC (A)
Fig. 7 - Typical Source Drain Diode Forward Voltage
Fig. 9 - Maximum Drain Current vs.
Case Temperature
10000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
1000
10us
I
D
, Drain Current (A)
V
DS
V
GS
100us
1ms
R
D
D.U.T.
+
-
V
DD
100
R
G
10
10ms
10 V
Pulse width
≤
1 µs
Duty factor
≤
0.1 %
1
1
T
C
= 25 ° C
T
J
= 150 ° C
Single Pulse
10
100
1000
V
DS
, Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
Fig. 10a - Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig. 10b - Switching Time Waveforms
www.vishay.com
4
For technical questions, contact:
indmodules@vishay.com
Document Number: 93459
Revision: 12-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-FB190SA10
Power MOSFET, 190 A
Vishay Semiconductors
1
Z
thJC
- Thermal Impedance (°C/W)
0.75
0.5
0.1
0.3
0.2
0.1
Single pulse
(thermal resistance)
DC
0.01
0.0001
0.001
0.01
0.1
1
10
t
1
, Rectangular Pulse Duration (s)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction to Case
E
AS
, Single Pulse Avalanche Energy (mJ)
1500
1200
ID
71A
100A
BOTTOM 160A
TOP
15 V
900
V
DS
R
G
20 V
L
Driver
600
D.U.T
I
AS
t
p
0.01
Ω
+
-
V
DD
A
300
0
25
50
75
100
125
150
Starting T , Junction Temperature(
°
C)
J
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
V
(B R )D S S
tp
Q
G
10 V
Q
GS
V
G
I
AS
Q
GD
Charge
Fig. 12b - Unclamped Inductive Waveforms
Fig. 13a - Basic Gate Charge Waveform
Document Number: 93459
Revision: 12-Apr-11
For technical questions, contact:
indmodules@vishay.com
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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