FEP30AP thru FEP30JP
Vishay General Semiconductor
Dual Common Cathode Ultrafast Rectifier
FEATURES
• Glass passivated chip junction
• Ultrafast recovery time
• Low switching losses, high efficiency
• Low thermal resistance
3
2
1
• High forward surge capability
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC and
WEEE 2002/96/EC
TO-247AD (TO-3P)
PIN 1
PIN 3
PIN 2
CASE
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode
power supplies, inverters, freewheeling diodes, dc-to-dc
converters, and other power switching application.
30 A
50 V to 600 V
300 A
35 ns, 50 ns
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
t
rr
V
F
T
J
max.
MECHANICAL DATA
Case:
TO-247AD (TO-3P)
Epoxy meets UL 94 V-0 flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class 1A
whisker test
Polarity:
As marked
Mounting Torque:
10 in-lbs maximum
0.95 V, 1.3 V, 1.5 V
150 °C
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at T
C
= 100 °C
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load per diode
Operating storage and temperature range
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
T
J
, T
STG
FEP
30AP
50
35
50
FEP
30BP
100
70
100
FEP
30CP
150
105
150
FEP
30DP
200
140
200
30
300
- 55 to + 150
FEP
30FP
300
210
300
FEP
30GP
400
280
400
FEP
30HP
500
350
500
FEP
30JP
600
420
600
UNIT
V
V
V
A
A
°C/W
Document Number: 88597
Revision: 08-Apr-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
FEP30AP thru FEP30JP
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum instantaneous
forward voltage per diode
Maximum DC reverse current
at rated DC blocking voltage
per diode
Maximum reverse recovery
time per diode
Typical junction capacitance
per diode
TEST
CONDITIONS
15.0 A
T
C
= 25 °C
I
R
T
C
= 100 °C
I
F
= 0.5 A,
I
R
= 1.0 A,
I
rr
= 0.25 A
4.0 V, 1 MHz
t
rr
35
500
50
ns
SYMBOL
V
F
FEP
30AP
FEP
30BP
FEP
30CP
FEP
30DP
FEP
30FP
FEP
30GP
1.3
10
μA
FEP
30HP
1.5
FEP
30JP
UNIT
V
0.95
C
J
175
145
pF
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance per diode
SYMBOL
R
θJC
(1)
FEP
30AP
FEP
30BP
FEP
30CP
FEP
30DP
1.0
FEP
30FP
FEP
30GP
FEP
30HP
FEP
30JP
UNIT
°C/W
Note
(1)
Thermal resistance from junction to case per diode mounted on heatsink
ORDERING INFORMATION
(Example)
PACKAGE
TO-247AD
PREFERRED P/N
FEP30JP-E3/45
UNIT WEIGHT (g)
6.15
PACKAGE CODE
30
BASE QUANTITY
30/tube
DELIVERY MODE
Tube
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
36
300
Peak Forward
Surge
Current (A)
Resistive or Inductive Load
T
C
= 100 °C
8.3 ms
Single
Half
Sine-Wave
250
Average Forward Current (A)
30
200
24
150
12
100
6
50
0
0
50
100
150
0
1
10
100
Case Temperature (°C)
Number of Cycles at 60 Hz
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
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For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 88597
Revision: 08-Apr-10
FEP30AP thru FEP30JP
Vishay General Semiconductor
100
1000
Pulse Width = 300 μs
1 % Duty Cycle
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
Instantaneous Forward Current (A)
10
T
J
= 125 °C
Junction Capacitance (pF)
100
1
T
J
= 25 °C
50 V to 200 V
300 V to 400 V
500 V to 600 V
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
50 V to 400 V
500 V to 600 V
10
0.1
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
1000
Instantaneous Reverse Current (μA)
50 V to 200 V
300 V to 600 V
100
T
J
= 125 °C
10
1
T
J
= 100 °C
0.1
T
J
= 25 °C
0.01
10
20
30
40
50
60
70
80
90
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Leakage Characteristics Per Diode
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
TO-247AD (TO-3P)
0.245 (6.2)
0.225 (5.7)
0.645 (16.4)
0.625 (15.9)
0.323 (8.2)
0.313 (7.9)
0.203 (5.16)
0.193 (4.90)
30°
0.170
(4.3)
0.840 (21.3)
0.820 (20.8)
0.142 (3.6)
0.138 (3.5)
10° TYP.
Both Sides
0.078 (1.98) REF.
10
1
2
3
0.086 (2.18)
0.076 (1.93)
0.127 (3.22)
0.118 (3.0)
0.108 (2.7)
1° REF.
Both Sides
0.160 (4.1)
0.140 (3.5)
0.795 (20.2)
0.775 (19.6)
0.117 (2.97)
0.225 (5.7)
0.205 (5.2)
PIN 1
PIN 3
0.048 (1.22)
0.044 (1.12)
0.030 (0.76)
0.020 (0.51)
PIN 2
CASE
Document Number: 88597
Revision: 08-Apr-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
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Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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