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3DD523

Description
Silicon NPN Power Transistor
File Size128KB,3 Pages
ManufacturerISC
Websitehttp://www.iscsemi.cn/
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3DD523 Overview

Silicon NPN Power Transistor

Inchange Semiconductor
Product Specification
Silicon NPN Power Transistor
3DD523
DESCRIPTION
·With
TO-3 package
·DC
Current Gain -h
FE
= 20–70 @ I
C
= 4 Adc
·Collector–Emitter
Saturation Voltage -
V
CE(sat)
= 1.1 Vdc (Max) @ I
C
= 4 Adc
·Excellent
Safe Operating Area
APPLICATIONS
·Designed
for general–purpose switching
and amplifier applications.
PINNING
PIN
1
2
3
Base
Emitter
Fig.1 simplified outline (TO-3) and symbol
Collector
DESCRIPTION
Absolute maximum ratings(Ta=
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
150
150
7
10
100
150
-65~200
UNIT
V
V
V
A
W
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
1.52
UNIT
℃/W
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