The DG2001 is a single-pole/double-throw monolithic CMOS
analog switch designed for high performance switching of
analog signals. Combining low power, high speed, low
on-resistance and small physical size, the DG2001 is ideal
for portable and battery powered applications requiring high
performance and efficient use of board space.
The DG2001 is built on Vishay Siliconix’s low voltage JI2
process. The DG2001 has a minimum 2000 V, ESD
protection, per Method 3015.7. An epitaxial layer prevents
latchup. Break-before-make is guaranteed.
The switch conducts equally well in both directions when on,
and blocks up to the power supply level when off.
FEATURES
• Halogen-free according to IEC 61249-2-21
Definition
• Low Voltage Operation (1.8 V to 5.5 V)
• Low On-Resistance - R
ON
: 3
• Fast Switching - t
ON
: 20 ns, t
OFF
: 10 ns
• Low Leakage - I
COM
: 0.2 nA
• Low Charge Injection - Q
INJ
: 5 pC
• Low Power Consumption
• TTL/CMOS Compatible
• ESD Protection > 2000 V (Method 3015.7)
• TSOP-6 Package
• Compliant to RoHS Directive 2002/95/EC
BENEFITS
•
•
•
•
Reduced Power Consumption
Simple Logic Interface
High Accuracy
Reduce Board Space
APPLICATIONS
•
•
•
•
•
Cellular Phones
Communication Systems
Portable Test Equipment
Battery Operated Systems
Sample and Hold Circuits
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
TSOP-6
IN
V+
GND
1
2
3
Top View
6
5
4
NO (Source
1
)
COM
NC (Source
2
)
TRUTH TABLE
Logic
0
1
NC
ON
OFF
NO
OFF
ON
ORDERING INFORMATION
Temp Range
- 40 °C to 85 °C
Package
TSOP-6
Part Number
DG2001DV-T1
DG2001DV-T1-E3
Document Number: 71398
S11-1185–Rev. C, 13-Jun-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
DG2001
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
Parameter
Referenced V+ to GND
IN, COM, NC, NO
a
Continuous Current (Any Terminal)
Peak Current (Pulsed at 1 ms, 10 % duty cycle)
ESD (MIL-STD-883B, Method 3015.7)
Storage Temperature (D Suffix)
Power Dissipation (Packages)
b
Symbol
Limit
- 0.3 to + 6
- 0.3 to (V+ + 0.3)
± 50
± 200
> 2000
- 65 to 125
Unit
V
mA
V
°C
mW
TSOP-6
c
570
Notes:
a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 7 mW/°C above 25 °C.
SPECIFICATIONS
(V+ = 2 V)
Test Conditions
Unless Otherwise Specified
V+ = 2 V, ± 10 %
V
IN
= 0.4 V or 1.6 V
e
Limits
- 40 °C to 85 °C
Temp.
a
Min.
b
Typ.
c
Max.
b
Unit
Parameter
Analog Switch
Analog Signal Range
d
On-Resistance
R
ON
Flatness
d
Symbol
V
NO
, V
NC
V
COM
R
ON
R
ON
Flatness
I
NO(off)
I
NC(off)
I
COM(off)
I
COM(on)
Full
V+ = 1.8 V, V
COM
= 1 V, I
NO
, I
NC
= 10 mA
V+ = 1.8 V, V
COM
= 0 V to V+, I
NO
, I
NC
= 10 mA
V+ = 2.2 V
V
NO
, V
NC
= 0.5 V/1.5 V, V
COM
= 1.5 V/0.5 V
Room
Full
Room
Room
Full
Room
Full
Room
Full
Full
Full
Full
V
IN
= 0 V or V+
Full
Room
Full
V
NO
or V
NC
= 1.5 V, R
L
= 300
,
C
L
= 35 pF
Room
Full
Room
C
L
= 1 nF, V
GEN
= 0 V, R
GEN
= 0
R
L
= 50
,
C
L
= 5 pF, f = 1 MHz
Room
Room
Room
Room
Room
0
15
17
5
- 300
- 3.5
- 300
- 3.5
- 350
- 3.5
1.6
V+
30
32
V
Switch Off
Leakage Current
g
Channel-On
Leakage Current
g
Digital Control
Input High Voltage
Input Low Voltage
Input Capacitance
Input Current
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Break-Before-Make Time
Charge Injection
d
Off-Isolation
d
Crosstalk
d
N
O
, N
C
Off Capacitance
d
Channel-On
Capacitance
d
300
3.5
300
3.5
300
3.5
pA
nA
pA
nA
pA
nA
V+ = 2.2 V, V
NO
, V
NC
= V
COM
= 0.5 V/1.5 V
V
INH
V
INL
C
in
I
INL
or I
INH
t
ON
t
OFF
t
d
Q
INJ
OIRR
X
TALK
C
NO(off)
C
NC(off)
C
ON
V+
I+
P
C
V
IN
= 0 V or V+
0.4
4
1
30
15
1
15
1
- 71
- 70
17
50
1.8
0.01
2.20
1
2.2
10
1
50
53
30
33
V
pF
µA
ns
pC
dB
V
IN
= 0 V or V+, f = 1 MHz
pF
Power Supply
Power Supply Range
Power Supply Current
Power Consumption
V
µA
µW
www.vishay.com
2
Document Number: 71398
S11-1185–Rev. C, 13-Jun-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
DG2001
Vishay Siliconix
SPECIFICATIONS
(V+ = 3 V)
Test Conditions
Unless Otherwise Specified
V+ = 3 V, ± 10 %
V
IN
= 0.4 V or 2 V
e
Limits
- 40 °C to 85 °C
Temp.
a
Min.
b
Typ.
c
Max.
b
Unit
Parameter
Analog Switch
Analog Signal Range
d
On-Resistance
R
ON
Flatness
d
Switch Off
Leakage Current
g
Channel-On
Leakage Current
Digital Control
Input High Voltage
Input Low Voltage
Input Capacitance
Input Current
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Break-Before-Make Time
Charge Injection
d
Off-Isolation
d
Crosstalk
d
N
O
, N
C
Off Capacitance
d
Channel-On Capacitance
Power Supply
Power Supply Range
Power Supply Current
Power Consumption
d
g
Symbol
V
NO
, V
NC
,
V
COM
R
ON
R
ON
Flatness
I
NO(off)
,
I
NC(off)
I
COM(off)
I
COM(on)
Full
V+ = 2.7 V, V
COM
= 1.5 V, I
NO
, I
NC
= 10 mA
V+ = 2.7 V, V
COM
= 0 V to V+, I
NO
, I
NC
= 10 mA
V+ = 3.3 V
V
NO
, V
NC
= 1 V/3 V, V
COM
= 3 V/1 V
Room
Full
Room
Room
Full
Room
Full
Room
Full
Full
Full
Full
V
IN
= 0 V or V+
Full
Room
Full
V
NO
or V
NC
= 2 V, R
L
= 300
,
C
L
= 35 pF
Room
Full
Room
C
L
= 1 nF, V
GEN
= 0 V, R
GEN
= 0
R
L
= 50
,
C
L
= 5 pF, f = 1 MHz
Room
Room
Room
Room
Room
0
5
6
3
- 400
- 4.5
- 400
- 4.5
- 450
- 4.5
2
V+
9.2
10.2
V
400
4.5
400
4.5
400
4.5
pA
nA
pA
nA
pA
nA
V+ = 3.3 V, V
NO
, V
NC
= V
COM
= 1 V/3 V
V
INH
V
INL
C
in
I
INL
or I
INH
0.4
4
1
24
12
1
13
3
- 71
- 70
17
50
2.7
3.3
0.01
1
3.3
10
1
45
48
30
33
V
pF
µA
t
ON
t
OFF
t
d
Q
INJ
OIRR
X
TALK
C
NO(off)
,
C
NC(off)
C
ON
V+
I+
P
C
V
IN
= 0 V or V+
ns
pC
dB
V
IN
= 0 V or V+, f = 1 MHz
pF
V
µA
µW
Document Number: 71398
S11-1185–Rev. C, 13-Jun-11
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
DG2001
Vishay Siliconix
SPECIFICATIONS
(V+ = 5 V)
Test Conditions
Unless Otherwise Specified
V+ = 5 V, ± 10 %
V
IN
= 0.8 V or 2.4 V
e
Limits
- 40 °C to 85 °C
Temp.
a
Min.
b
Typ.
c
Max.
b
Unit
Parameter
Analog Switch
Analog Signal Range
d
On-Resistance
R
ON
Flatness
d
Symbol
V
NO
, V
NC
V
COM
R
ON
R
ON
Flatness
I
NO(off)
I
NC(off)
I
COM(off)
I
COM(on)
Full
V+ = 4.5 V, V
COM
= 3 V, I
NO
, I
NC
= 10 mA
V+ = 4.5 V, V
COM
= 0 V to V+, I
NO
, I
NC
= 10 mA
V+ = 5.5 V
V
NO
, V
NC
= 1 V/4.5 V, V
COM
= 4.5 V/1 V
V+ = 5.5 V, V+ = 5.5 V
V
NO
, V
NC
= V
COM
= 1 V/4.5 V
Room
Full
Room
Room
Full
Room
Full
Room
Full
Full
Full
Full
V
IN
= 0 V or V+
Full
Room
Full
V
NO
or V
NC
= 3 V, R
L
= 300
,
C
L
= 35 pF
Room
Full
Room
C
L
= 1 nF, V
GEN
= 0 V, R
GEN
= 0
R
L
= 50
,
C
L
= 5 pF, f = 1 MHz
Room
Room
Room
Room
Room
0
3
4
2
- 900
- 5.5
- 900
- 5.5
- 1000
- 5.5
2.4
V+
7
8
V
Switch Off
Leakage Current
g
Channel-On
Leakage Current
Digital Control
Input High Voltage
Input Low Voltage
Input Capacitance
Input Current
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Break-Before-Make Time
Charge Injection
d
Off-Isolation
d
Crosstalk
d
Source-Off Capacitance
d
Channel-On Capacitance
d
Power Supply
Power Supply Range
Power Supply Current
Power Consumption
g
900
5.5
900
5.5
1000
5.5
pA
nA
pA
nA
pA
nA
V
INH
V
INL
C
in
I
INL
or I
INH
0.8
4
1
20
10
1
10
7
- 71
- 70
17
50
4.5
5.5
0.01
1
5.5
10
1
37
40
27
30
V
pF
µA
t
ON
t
OFF
t
d
Q
INJ
OIRR
X
TALK
C
NO(off)
C
NC(off)
C
ON
V+
I+
P
C
V
IN
= 0 V or V+
ns
pC
dB
V
IN
= 0 V or V+, f = 1 MHz
pF
V
µA
µW
Notes:
a. Room = 25 °C, Full = as determined by the operating suffix.
b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
c. Typical values are for design aid only, not guaranteed nor subject to production testing.
d. Guarantee by design, nor subjected to production test.
e. V
IN
= input voltage to perform proper function.
f. Guaranteed by 5 V leakage testing, not production tested.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
4
Document Number: 71398
S11-1185–Rev. C, 13-Jun-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
DG2001
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
9
8
7
R
ON
– On-Resistance ()
6
5
4
3
2
1
0
0
1
2
3
4
5
V
COM
– Analog Voltage (V)
V+ = 5 V
V+ = 3 V
V+ = 2 V
13
12
11
V+ = 2 V
R
ON
– On-Resistance ()
10
9
8
7
6
5
4
3
0
1
2
3
4
5
V
COM
– Analog Voltage (V)
85 °C
- 40 °C
25 °C
85 °C
25 °C
- 40 °C
V+ = 5 V
R
ON
vs. V
COM
and Supply Voltage
R
ON
vs. Analog Voltage and Temperature
10
V+ = 5 V
V
IN
= 0 V
I+ – Supply Current (nA)
10 mA
I+ – Supply Current (A)
- 40
- 20
0
20
40
Temperature (°C)
60
80
100
1
1 mA
100 µA
0.1
10 µA
0.01
1 µA
0.001
- 60
0.1 µA
1
10
100
1k
10 k 100 k
1M
Input Switching Frequency (Hz)
10 M
Supply Current vs. Temperature
Supply Current vs. Input Switching Frequency
10 000
200
V+ = 5.5 V
V+ = 5 V
100
0
- 100
I
COM(off)
- 200
I
COM(on)
- 300
I
ON(off)
/I
NC(off)
- 400
1000
Leakage Current (pA)
I
COM(off)
100
I
COM(on)
10
I
ON(off)
/I
NC(off)
Leakage Current (pA)
1
- 60
- 500
- 40
- 20
0
20
40
Temperature (°C)
60
80
100
0
1
2
3
4
5
V
COM
, V
NO
, V
NC
, – Analog Voltage (V)
Leakage Current vs. Temperature
Leakage vs. Analog Voltage
Document Number: 71398
S11-1185–Rev. C, 13-Jun-11
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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