DG2522
Vishay Siliconix
Low Voltage, Fault Protection, SP3T Analog Switch
(3:1 Multiplexer/Demultiplexer)
DESCRIPTION
The DG2522 is a low on-resistance SP3T analog switch
design to operation from 1.6 V to 5.5 V.
The DG2522 switches signals in either direction with
amplitudes up to V+. Protection circuit is built in to isolate the
signals if any of them swings above V+. It guaranteed low
leakage level for isolation in power down mode.
Built on Vishay Siliconix’s sub-micro CMOS technology, the
DG2522 achieves switch on-resistance of 0.8
Ω
at 4.5 V V+
with 0.6
Ω
flatness. It has superior 0.008 % THD (total
harmonic distortion) over frequency of 20 Hz to 20 kHz. It
provides - 59 dB off-Isolation, - 65 dB crosstalk at 1 MHz, and
105 MHz - 3 dB bandwidth.
The select pin of the control logic input can tolerate voltages
above V+ up to 5.5 V. Logic high 1.8 V is guaranteed over the
full V+ range that makes it compatible with many low voltage
digital control circuits.
The features of ultra small package size, wide V+ range, low
on-resistance, low logic threshold, and switch isolation under
fault condition make it an ideal device for battery operated
devices to handle signals such as audio, video, data stream,
and other high accuracy signals.
The DG2522 comes in a small miniQFN-8 lead package of
1.4 mm x 1.4 mm x 0.55 mm. As a committed partner to the
community and the environment, Vishay Siliconix
manufactures this product with the lead (Pb)-free device
termination and is 100 % RoHS compliant.
FEATURES
•
•
•
•
•
•
•
Isolation at V+ = 0 V and signal above V+
Logic input tolerates up to 5.5 V
1.6 V to 5.5 V operation voltage range
Guaranteed 1.8 V V
TH(high)
at V+ = 4.5 V
0.008 % total harmonic distortion
Low switch on-resistance
300 mA latch up current per JESD78
RoHS
COMPLIANT
BENEFITS
• Ultra small miniQFN8 package of 1.4 mm x 1.4 mm
x 0.55 mm
• High fidelity audio switch
• Reed relay replacement
• Low power consumption
APPLICATIONS
•
•
•
•
•
•
•
Cellular phones and PDAs
GPS and portable media players
Modems and wireless cards
Computers peripherals
Communication and network circuits
Low voltage data acquisition systems
Portable instrumentation
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG2522
miniQFN - 8L
COM
IN
1
IN
2
5
Control
7
6
V+
8
4
GND
Px
1
S
0
2
S
1
3
S
2
Pin 1
Device marking: Px for DG2522
x = Date/Lot Traceability Code
Top
View
Document Number: 68831
S09-0293-Rev. B, 23-Feb-09
www.vishay.com
1
DG2522
Vishay Siliconix
TRUTH TABLE
DG2522
IN
1
(Pin 6)
0
1
0
1
IN
2
(Pin 5)
0
0
1
1
Function
COM diconnect
COM (Pin 7) = S
0
(Pin 1)
COM (Pin 7) = S
1
(Pin 2)
COM (Pin 7) = S
2
(Pin 3)
ORDERING INFORMATION
Temp. Range
- 40 °C to 85 °C
Package
miniQFN-8L
Part Number
DG2522DN-T1-E4
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Reference to GND
V+
IN, COM, S
Xa
Limit
- 0.3 to 6.0
- 0.3 to (V+ + 0.3)
30
± 300
± 500
- 65 to 150
190
Unit
V
Current (Any terminal except S
X
or COM)
mA
Continuous Current (S
X
or COM)
Peak Current (Pulsed at 1 ms, 10 % duty cycle)
Storage Temperature (D Suffix)
°C
b
c
Power Dissipation (Packages)
miniQFN-8L
mW
Notes:
a. Signals on S0, S1, S2 and COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC board.
c. Derate 2.4 mW/°C above 70 °C.
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2
Document Number: 68831
S09-0293-Rev. B, 23-Feb-09
DG2522
Vishay Siliconix
SPECIFICATIONS
V+ = 5 V
Test Conditions
Unless Otherwise Specified
V+ = 5 V, ± 10 %,V
IN
= 0.6 V or 1.8 V
e
R
DS(on)
V+ = 4.5 V, I
SX
= 100 mA, V
COM
= 2.5 V
V+ = 4.5 V, I
SX
= 100 mA, V
COM
= 2.5 V
V+ = 4.5 V, I
SX
= 100 mA, V
COM
= 2.5 V
V+ = 4.5 V, I
SX
= 100 mA,
V
COM
= 0.5 V, 2.5 V
V+ = 5.5 V, V
SX
= 1 V/4.5 V,
V
COM
= 4.5 V/1 V
Limits
- 40 °C to 85 °C
Temp.
a
Full
Room
Full
Room
Room
Room
Full
Room
Full
V+ = 4.3 V, V
SX
= V
COM
= 4.5 V/1 V
V+ = 0 V, V
SX
= 0 V/5.5 V, V
COM
= 5.5 V/0 V
Room
Full
Room
Full
Full
Full
Full
Room
Full
Room
Full
Room
V+ = 5.0 V, V
SX
= V+,
R
L
= 50
Ω,
C
L
= 35 pF (see figure 1)
C
L
= 1 nF, R
GEN
= 0
Ω,
V
GEN
= 0 V
R
L
= 50
Ω,
C
L
= 5 pF, f = 1 MHz
R
L
= 50
Ω,
C
L
= 5 pF, f = 1 MHz
R
L
= 50
Ω,
C
L
= 5 pF
f = 1 MHz, V
NX
= 0 V
f = 1 MHz, V
COM
= 0 V
f = 1 MHz, V
COM
= V
NX
= 0 V
V+ = 5 V, V
IN
= 1 V
RMS
, R
L
= 600
Ω
f = 20 Hz to 20 kHz
Full
Room
Full
Room
Room
Room
Room
Room
Room
Room
27
- 59
- 64
105
17
51
70
0.008
%
pF
40
14
53
75
85
60
70
pC
dB
MHz
ns
-1
8
5
1
- 20
- 120
- 20
- 120
- 20
- 120
-1
- 25
1.6
1.8
0.6
pF
µA
V
0.001
0.2
Min.
b
0
0.8
Typ.
c
Max.
b
V+
1.1
1.5
0.1
0.6
20
120
20
120
20
120
1
25
µA
nA
Ω
Unit
V
Parameter
Analog Switch
Analog Signal Range
d
On-Resistance
R
ON
Match
R
ON
Resistance Flatness
Symbol
V
analog
R
DS(on)
ΔR
ON
R
ON
flatness
I
SX(off)
I
COM(off)
I
COM(on)
Switch Off Leakage
Current
Channel-On Leakage
Current
Power Down Leakage
Digital Control
Input High Voltage
Input Low Voltage
Input Capacitance
Input Current
Dynamic Characteristics
Break-Before-Make Time
e
Enable Turn-On Time
e
Enable Turn-Off Time
e
Charge Injection
Off-Isolation
Crosstalk
d
d
d
V
INH
V
INL
C
IN
I
INL
or I
INH
V+ = 2.7 V
V+ = 4.5 V
f = 1 MHz, V
INx
= 0 V
V
IN
= 0 or V+
V+ = 5.0 V, V
SX
= V+,
R
L
= 50
Ω,
C
L
= 35 pF (see figure 2)
t
BBM
t
ON
t
OFF
Q
O
IRR
X
TALK
BW
C
SX(off)
C
COM(off)
C
COM(on)
THD
- 3 dB Bandwidth
d
Source Off Capacitance
d
Drain Off Capacitance
Drain On Capacitance
d
d
Total Harmonic Distortion
d
Power Supply
Power Supply Range
Power Supply Current
V+
I+
V
IN
= 0 or V+
Full
1.6
5.5
1.0
V
µA
Notes:
a. Room = 25 °C, Full = as determined by the operating suffix.
b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
c. Typical values are for design aid only, not guaranteed nor subject to production testing.
d. Guarantee by design, not subjected to production test.
e. V
IN
= input voltage to perform proper function.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 68831
S09-0293-Rev. B, 23-Feb-09
www.vishay.com
3
DG2522
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
4.4
4.2
4.0
3.8
3.6
3.4
3.2
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
0.5
1
5.0
4.5
4.0
R
ON
- On-Resistance (Ω)
V+
= 1.6
V
I
SX
= 100 mA
- 40 °C
+ 25 °C
+
85
°C
R
ON
- On-Resistance (Ω)
V+
= 1.6
V
3.5
3.0
2.5
2.0
1.5
1.0
0.5
V+
= 2.3
V
V+
= 3.0
V V+
= 4.5
V
V+
= 5.5
V
1.5
2
2.5
3
3.5
4
4.5
5
5.5
0.0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
V
D
- Analog
Voltage
(V)
V
D
- Analog
Voltage
(V)
R
ON
vs. V
D
and Single Supply Voltage
5.0
4.5
4.0
R
ON
vs. Analog Voltage and Temperature
5.0
V+
= 2.3
V
I
SX
= 100 mA
R
ON
- On-Resistance (Ω)
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
V+
= 3.0
V
I
SX
= 100 mA
R
ON
- On-Resistance (Ω)
3.5
3.0
2.5
+
85
°C
2.0
1.5
1.0
0.5
0.0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
+ 25 °C
- 40 °C
+
85
°C
+ 25 °C
- 40 °C
1.8
2
2.2
0.0
0.0
0.3
0.6
0.9
1.2
1.5
1.8
2.1
2.4
2.7
3.0
V
D
- Analog
Voltage
(V)
V
D
- Analog
Voltage
(V)
R
ON
vs. Analog Voltage and Temperature
5.0
4.5
4.0
R
ON
- On-Resistance (Ω)
R
ON
vs. Analog Voltage and Temperature
5.0
V+
= 4.5
V
I
SX
= 100 mA
R
ON
- On-Resistance (Ω)
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
V+
= 5.5
V
I
SX
= 100 mA
3.5
3.0
2.5
2.0
+
85
°C
1.5
1.0
0.5
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
+ 25 °C
- 40 °C
+
85
°C
+ 25 °C
- 40 °C
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
V
D
- Analog
Voltage
(V)
V
D
- Analog
Voltage
(V)
R
ON
vs. Analog Voltage and Temperature
R
ON
vs. Analog Voltage and Temperature
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4
Document Number: 68831
S09-0293-Rev. B, 23-Feb-09
DG2522
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
10 mA
V+
= 4.3
V
1 mA
V+
= 3.6
V
I+ - Supply Current (A)
Leakage Current (pA)
100 000
V+
= 5.5
V
10 000
I
COM(ON)
1000
I
COM(OFF)
100
I
SX(OFF)
100
µA
10
µA
1
µA
100 nA
10 nA
V+
= 1.6
V
1 nA
100 pA
10
100
1K
10K
100K
1M
10M
Input Switching Frequency (Hz)
V+
= 2.3
V
V+
= 3.0
V
10
1
0.1
- 60 - 40 - 20
0
20
40
60
80
100 120 140
Temperature (°C)
Supply Current vs. Input Switching Frequency
1.50
1.45
1.40
1.35
1.30
1.25
1.20
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
0.65
0.60
0.55
0.50
1.5
0
Leakage Current vs. Temperature
V+
= 5.0
V
-1
-2
-3
V
IH
Gain (dB)
V
T
- Switching Threshold (V)
V
IL
-4
-5
-6
-7
-
8
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
1
10
100
Frequency (MHz)
1000
10 000
V+
- Supply
Voltage
(V)
Switching Threshold vs. Supply Voltage
0
- 10
- 20
Off Isolation (dB)
Gain vs. Frequency
0
V+
= 5.0
V
- 10
- 20
- 30
Crosstalk
V+
= 5.0
V
- 30
- 40
- 50
- 60
- 70
-
80
- 90
- 100
1
10
100
1000
- 40
- 50
- 60
- 70
-
80
- 90
- 100
1
10
100
1000
Frequency (MHz)
Frequency (MHz)
Off Isolation vs. Frequency
Crosstalk vs. Frequency
Document Number: 68831
S09-0293-Rev. B, 23-Feb-09
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