PF990-10
S1M0W046B0J1/7
ge
olta
V
ow
er Ltion
Sup era ts
Op oduc
Pr
4M-bit Static RAM
q
Super Low Voltage Operation and Low Current Consumption
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Access Time 100ns (1.8V) / 70ns (2.2V)
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262,144 Words x 16-bit Asynchronous
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Wide Temperature Range
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DESCRIPTION
The S1M0W046B0J1/7 is a 262,144words x 16-bit asynchronous, random access memory on a monolithic
CMOS chip. Its very low standby power requirement makes it ideal for applications requiring non-volatile storage
with back-up batteries. The asynchronous and static nature of the memory requires no external clock or refreshing
circuit. It is possible to control the data width by the data byte control. Both the Input and output ports are TTL
compatible and 3-state output allows easy expansion of memory capacity. The temperature range of the
S1M0W046B0J1/7 is from –40 to 85°C, and it is suitable for the industrial products.
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FEATURES
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Fast Access time ........................ 100ns (at 1.8V) / 70ns (at 2.2V)
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Low supply current ..................... LL Version
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Completely static ........................ No clock required
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Supply voltage ............................ 1.8V to 3.0V
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TTL compatible inputs and outputs
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3-state output with wired-OR capability
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Non-volatile storage with back-up batteries
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Package ..................................... S1M0W046B0J
TFBGA-48 pin (Tape CSP)
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BLOCK DIAGRAM
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
A11
A12
A13
A14
A15
A16
A17
Address Buffer
10
X Decoder
1024
Memory Cell Array
1024 x 256 x 16
256x16
8
Y Decoder
256
Column Gate
CS
CS
Control
Logic
16
LB
UB
OE
WE
LB , UB
OE , WE
Control
Logic
I/O Buffer
I/O1
I/O16
1
Rev.1.4
S1M0W046B0J1/7
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PIN CONFIGURATION
TFBGA-48 pin
S1M0W046B0J
1
A
B
C
D
E
F
G
H
LB
I/O9
2
OE
UB
3
A0
A3
4
A1
A4
A6
A7
5
A2
CS
6
NC
I/O1
I/O10 I/O11 A5
V
SS
I/O12 A17
I/O2 I/O3
I/O4 V
DD
V
DD
I/O13 NC A16 I/O5 V
SS
I/O15 I/O14 A14 A15 I/O6 I/O7
I/O16 NC
NC
A8
A12 A13
A9
WE I/O8
NC
A10 A11
Top view (Looking through part)
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PIN DESCRIPTION
A0 to A17
WE
OE
CS
LB
UB
I/O1 to 16
V
DD
V
SS
NC
Address Input
Write Enable
Output Enable
Chip Select
LOWER Byte Enable
UPPER Byte Enable
Data I/O
Power Supply (1.8V to 3.0V)
Power Supply (0V)
No connection
2
Rev.1.4
S1M0W046B0J1/7
s
ABSOLUTE MAXIMUM RATINGS
Parameter
Supply voltage
Input voltage
Input/Output voltage
Power dissipation
Operating temperature
Storage temperature
Soldering temperature and time
*
V
I
,V
I/O
Symbol
V
DD
V
I
V
I/O
P
D
T
opr
T
stg
T
sol
Ratings
– 0.5 to 3.6
– 0.5
*
to V
DD
+ 0.3
– 0.5
*
to V
DD
+ 0.3
0.5
– 40 to 85
– 65 to 150
260°C, 10s (at lead)
(V
SS
=0V)
Unit
V
V
V
W
°C
°C
–
(Min.) = –2.0V (when pulse width is less than 50ns)
s
DC RECOMMENDED OPERATING CONDITIONS
Parameter
Supply voltage
Input voltege
*
if
Symbol
V
DD
V
SS
V
IH
V
IL
V
DD
= 1.8 to 2.2V
Max.
Min.
Typ.
2.2
1.8
2.0
0.0
0.0
0.0
V
DD
+0.3
0.75V
DD
–
*
–
0.3
– 0.3
(Ta = –40 to 85
°C)
V
DD
= 2.2 to 3.0V
Unit
Max.
Typ.
Min.
3.0
2.5
2.2
V
0.0
0.0
0.0
V
V
DD
+0.3
–
0.75V
DD
V
–
0.3
– 0.3
*
V
pulse width is less than 50ns it is – 2.0V
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ELECTRICAL CHARACTERISTICS
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DC Electrical Characteristics
(V
SS
=0V, Ta = –40 to 85
°C)
Parameter
Input leakage current
Output leakage current
High level output voltage
Low level output voltage
Symbol
I
LI
I
LO
V
OH
V
OL
I
DDS
Standby supply current
I
DDS1
Conditions
V
I
= 0 to V
DD
LB and UB = V
IH
or
CS = V
IH
or WE = V
IL
or OE = V
IH
, V
I/O
= 0 to V
DD
I
OH
I
OL
CS = V
IH
–40 to 85
°C
–40 to 70
°C
LL
CS
≥
V
DD
– 0.2V
–40 to 40
°C
25
°C
V
I
= V
IL
or V
IH
I
I/O
= 0mA, t
cyc
= Min.
V
I
= V
IL
or V
IH
I
I/O
= 0mA, t
cyc
= 1µs
V
I
= V
IL
or V
IH
I
I/O
= 0mA
-0.5mA,V
DD
≥
2.2V
–100µA
0.5mA,V
DD
≥
2.2V
100µA
V
DD
= 2.2 to 3.0V
V
DD
= 1.8 to 2.2V
Min. Typ.
*1
Max. Min. Typ.
*2
Max. Unit
–1.0
–
1.0 –1.0
–
1.0
µA
–1.0
–
V
DD
–0.2
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.3
20
2.5
2.5
1.0
–1.0
–
–
–
–
–
–
–
–
–
0.4
25
3
3
1.0
–
–
0.4
0.2
1.0
20
13.5
4.0
2.0
35
5
5
µA
V
V
mA
–
1.8
– V
DD
–0.2
–
–
0.2
–
0.8
15
10
3.0
1.5
30
4
4
–
–
–
–
–
–
–
–
µA
I
DDA
Average operating current
I
DDA1
Operating Supply Current
I
DDO
mA
mA
mA
*1 : Typical values are measured at Ta = 25°C and V
DD
= 2.0V
*2 : Typical values are measured at Ta = 25°C and V
DD
= 2.5V
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Terminal Capacitance
Parameter
Address Capacitance
Input Capacitance
I/O Capacitance
Symbol
C
ADD
C
I
C
I/O
Conditions
V
ADD
= 0V
V
I
= 0V
V
I/O
= 0V
Min.
–
–
–
Typ.
–
–
–
(Ta = 25°C, f = 1MHz)
Max.
8
8
10
Unit
pF
pF
pF
Note : This parameter is made by the inspection data of sample, not of all products
Rev.1.4
3
S1M0W046B0J1/7
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AC Electrical Characteristics
r
Read Cycle
S1M0W046B0J1
Parameter
Read cycle time
Address access time
CS access time
OE access time
LB, UB access time
CS output set time
CS output floating
LB, UB output set time
LB, UB output floating
OE output set time
OE output floating
Output hold time
Symbol
t
RC
t
ACC
t
ACS
t
OE
t
AB
t
CLZ
t
CHZ
t
BLZ
t
BHZ
t
OLZ
t
OHZ
t
OH
Test
Cnditions
1
1
1
1
1
2
2
2
2
2
2
1
V
DD
=1.8 to 2.2V
Max.
Min.
100
—
—
—
—
5
—
0
—
0
—
10
—
100
100
60
60
—
40
—
40
—
40
—
(V
SS
= 0V, Ta =–40 to 85°C)
S1M0W046B0J7
V
DD
=2.2 to 3.0V
Max.
Min.
70
—
—
—
—
5
—
0
—
0
—
5
—
70
70
40
40
—
30
—
30
—
30
—
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
r
Write Cycle
Parameter
Write cycle time
Chip select time (CS)
Address enable time
Address setup time
Write pulse width
LB, UB select time
Address hold time
Data setup time
Data hold time
WEoutput floating
WE output set time
*1 Test Conditions
1. Input pulse level : 0.3V to 0.8V
DD
(1.8V to 3.0V)
2. t
r
= t
f
= 5ns
3. Input and output timing reference levels :1/2V
DD
(1.8V to 3.0V)
4. Output load : C
L
=50pF (Includes Jig Capacitance)
(V
SS
= 0V, Ta = –40 to 85°C)
Test
Conditions
1
1
1
1
1
1
1
1
1
2
2
S1M0W046B0J1
V
DD
=1.8 to 2.2V
Min.
100
85
85
0
80
85
0
50
0
—
5
Max.
—
—
—
—
—
—
—
—
—
40
—
*2 Test Conditions
1. Input pulse level :
2. t
r
= t
f
= 5ns
3. Input timing reference levels :1/2V
DD
(1.8V to 3.0V)
4. Output timing reference levels :
±200mV
(The level changed from
stable output voltage level)
5. Output load :C
L
= 5pF (Includes Jig Capacitance)
0.3V to 0.8V
DD
(1.8V to 3.0V)
Symbol
t
WC
t
CW
t
AW
t
AS
t
WP
t
BW
t
WR
t
DW
t
DH
t
WHZ
t
OW
S1M0W046B0J7
V
DD
=2.2 to 3.0V
Min.
70
60
60
0
55
60
0
35
0
—
5
Max.
—
—
—
—
—
—
—
—
—
30
—
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
1TTL
I/O
C
L
I/O
C
L
1TTL
4
Rev.1.4
S1M0W046B0J1/7
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Timing Chart
Read Cycle
*1
t
RC
A0 to 17
t
ACC
CS
t
CLZ
LB, UB
OE
I/O1 to 16
(Dout)
t
AB
Write Cycle 1 (CS Control)
*2, *3
t
WC
A0 to17
t
ACS
t
OH
t
CHZ
LB, UB
t
OE
t
BHZ
t
OHZ
WE
I/O1 to 16
(Dout)
(Din)
High-Z
t
AS
CS
t
AW
t
CW
t
BW
t
WP
t
WR
t
BLZ
t
OLZ
t
DW
t
DH
Write Cycle 2 (WE Control)
*3
t
WC
A0 to 17
t
CW
CS
t
BW
LB, UB
t
AS
WE
I/O to 16
(Dout)
(Din)
t
WHZ
t
DW
t
WP
t
WR
t
OW
t
DH
Write Cycle 3 (UB, LB Control)
*3
t
WC
A0 to 17
CS
t
AS
LB, UB
WE
I/O to 16
(Dout)
(Din)
High-Z
t
CW
t
BW
t
WP
t
WR
t
DW
t
DH
Note :
*
1
–
–
During read cycle time, WE is to be "High" level.
–
–
–
–
*
2 In write cycle time that is controlled by CS, output buffer is to be "Hi-Z" state if OE is "Low" level.
*
3 When output buffer is in output state, be careful that do not input the opposite signals to the output data.
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DATA RETENTION CHARACTERISTIC WITH LOW VOLTAGE POWER SUPPLY
Parameter
Data retention supply voltage
Symbol
V
DDR
I
DDR
t
CDR
t
R
Conditions
–40 to 85°C
–40 to 70°C
V
DDR
= 2.5V, CS
≥
V
DD
– 0.2V LL
–40 to 40°C
+25°C
(V
SS
= 0V, Ta = –40 to 85°C)
Unit
Min.
Typ.*
Max.
1.2
3.0
V
–
–
17
–
–
µA
–
12
–
–
3.5
–
0.4
1.8
0
–
ns
–
ns
100
–
–
Data retention curren
Data hold time
Operation recovery time
* : Reference data at Ta=25°C
Data retention timing (CS Control)
V
DD
1.8V
t
CDR
V
DDR
≥
1.2V
Data hold time
CS
≥V
DD
– 0.2V
CS
V
IL
0.8xV
DD
0.8xV
DD
V
IL
1.8V
t
R
Rev.1.4
5
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