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30A02MH

Description
Low-Frequency General-Purpose Amplifier Applications
CategoryDiscrete semiconductor    The transistor   
File Size46KB,4 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
Download Datasheet Parametric View All

30A02MH Overview

Low-Frequency General-Purpose Amplifier Applications

30A02MH Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-PDSO-F3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)0.7 A
Collector-emitter maximum voltage30 V
ConfigurationSINGLE
Minimum DC current gain (hFE)200
JESD-30 codeR-PDSO-F3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typePNP
Maximum power dissipation(Abs)0.6 W
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)520 MHz
Base Number Matches1
Ordering number : ENN7359
30A02MH
PNP Epitaxial Planar Silicon Transistor
30A02MH
Low-Frequency
General-Purpose Amplifier Applications
Applications
Package Dimensions
unit : mm
2194A
[30A02MH]
0.25
0.3
Low-frequency Amplifier, high-speed switching,
small motor drive.
Features
0.15
0.25
0.65
2.0
(Bottom view)
0.07
Large current capacitance.
Low collector-to-emitter saturation voltage (resistance).
RCE(sat) typ=580mΩ[IC=0.7A, IB=35mA].
Small ON-resistance (Ron).
3
2.1
1.6
2
1
3
1 : Base
2 : Emitter
3 : Collector
0.85
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Mounted on a ceramic board (600mm
!0.8mm)
2
1
2
(Top view)
SANYO : MCPH3
Conditions
Ratings
--30
--30
--5
--700
--1.4
600
150
--55 to +150
Unit
V
V
V
mA
A
mW
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Symbol
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
VBE(sat)
Conditions
VCB=-
-30V, IE=0
VEB=-
-4V, IC=0
VCE=-
-2V, IC=--10mA
VCE=-
-10V, IC=--50mA
VCB=-
-10V, f=1MHz
IC=--200mA, IB=--10mA
IC=--200mA, IB=--10mA
200
520
4.7
--110
--0.9
--220
--1.2
Ratings
min
typ
max
--100
--100
500
MHz
pF
mV
V
Unit
nA
nA
Marking : AL
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo
http://semicon.sanyo.com/en/network
TOKYO, 110-8534 JAPAN
Bldg., 1-10,
Chome,
Ueno,
Taito-ku,
TOKYO OFFICE Tokyo Bldg., 1-10, 1
1 Chome,
Ueno,
Taito-ku, TOKYO, 110-8534 JAPAN
O3003 TS IM TA-100125 No.7359-1/4
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