Ordering number : EN6561A
5LN01S
SANYO Semiconductors
DATA SHEET
5LN01S
Features
•
•
•
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Low ON-resistance.
Ultrahigh-speed switching.
2.5V drive.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
PW≤10µs, duty cycle≤1%
Conditions
Ratings
50
±10
0.1
0.4
0.15
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Conditions
ID=1mA, VGS=0V
VDS=50V, VGS=0V
VGS=±8V, VDS=0V
VDS=10V, ID=100µA
VDS=10V, ID=50mA
ID=50mA, VGS=4V
ID=30mA, VGS=2.5V
ID=10mA, VGS=1.5V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
Ratings
min
50
1
±10
0.4
0.13
0.18
6
7.1
10
6.6
4.7
1.7
18
42
190
105
7.8
9.9
20
1.3
typ
max
Unit
V
µA
µA
V
S
Ω
Ω
Ω
pF
pF
pF
ns
ns
ns
ns
Marking : YB
Continued on next page.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71206 / 41006PE MS IM TB-00002188 / 81000 TS (KOTO) TA-2049 No.6561-1/4
5LN01S
Continued from preceding page.
Parameter
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
Qg
Qgs
Qgd
VSD
Conditions
VDS=10V, VGS=10V, ID=100mA
VDS=10V, VGS=10V, ID=100mA
VDS=10V, VGS=10V, ID=100mA
IS=100mA, VGS=0V
Ratings
min
typ
1.57
0.20
0.32
0.85
1.2
max
Unit
nC
nC
nC
V
Package Dimensions
unit : mm
7027-004
1.6
0.8
Switching Time Test Circuit
4V
0V
0.4
VIN
VIN
VDD=25V
ID=50mA
RL=500Ω
0.4
1.6
0.5 0.5
1
2
3
0.3
PW=10µs
D.C.≤1%
0.2
D
G
VOUT
5LN01S
0.1
0 to 0.1
0.1 MIN
1 : Gate
2 : Source
3 : Drain
SANYO : SMCP
0.75
0.6
P.G
50Ω
S
0.10
0.09
0.08
ID -- VDS
3.5V
4.0V
V
2.0
Drain Current, ID -- A
0.20
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0
ID -- VGS
VDS=10V
25
°
C
C
2.0
Ta=
--
Drain Current, ID -- A
0.07
6.0
0.06
0.05
0.04
0.03
0.02
0.01
0
0
0.2
0.4
0.6
0.8
1.0
IT00054
100
7
0
0.5
1.0
1.5
75
°
C
VGS=1.5V
V
25
°
2.5
3.0
IT00055
Drain-to-Source Voltage, VDS -- V
12
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
RDS(on) -- ID
Ta=25°C
Static Drain-to-Source
On-State Resistance, RDS(on) --
Ω
VGS=4V
Static Drain-to-Source
On-State Resistance, RDS(on) --
Ω
11
10
9
8
7
6
5
4
3
2
0
1
2
3
4
5
6
7
8
9
10
5
3
2
50mA
ID=30mA
10
7
5
3
2
Ta=75°C
25°C
--25°C
1.0
0.01
2
3
5
7
0.1
2
3
Gate-to-Source Voltage, VGS -- V
IT00056
Drain Current, ID -- A
IT00057
No.6561-2/4
5LN01S
100
7
RDS(on) -- ID
VGS=2.5V
100
7
RDS(on) -- ID
VGS=1.5V
Static Drain-to-Source
On-State Resistance, RDS(on) --
Ω
5
3
2
Static Drain-to-Source
On-State Resistance, RDS(on) --
Ω
5
3
2
10
7
5
3
2
Ta=75°C
25°C
--25°C
10
7
5
3
2
Ta=75°C
25°C
--25°C
1.0
0.01
2
3
5
7
0.1
2
3
1.0
0.001
2
3
5
7
0.01
2
3
IT00059
Drain Current, ID -- A
14
IT00058
1.0
RDS(on) -- Ta
Drain Current, ID -- A
y
fs
-- ID
12
Forward Transfer Admittance,
yfs
-- S
7
5
3
2
VDS=10V
Static Drain-to-Source
On-State Resistance, RDS(on) --
Ω
10
8
6
.5V
=2
S
, V G
4.0V
mA
0
S=
=3
, VG
ID
mA
=50
ID
-25
°
C
Ta= -
75
°
C
25
°
C
0.1
7
5
3
2
0.01
0.01
4
2
0
--60
--40
--20
0
20
40
60
80
100
120
140
160
2
3
5
7
Ambient Temperature, Ta --
°C
3
2
0.1
2
3
IT00060
1000
IS -- VSD
VGS=0V
Drain Current, ID -- A
IT00061
SW Time -- ID
7
VDD=25V
VGS=4V
Switching Time, SW Time -- ns
5
3
2
Source Current, IS -- A
0.1
td(off)
tf
7
5
Ta=
75
°
C
25
°
C
C
--25
°
100
7
5
3
2
3
2
tr
td(on)
0.01
0.5
0.6
0.7
0.8
0.9
1.0
1.1
IT00062
10
0.01
2
3
5
7
Diode Forward Voltage, VSD -- V
100
7
5
Ciss, Coss, Crss -- VDS
f=1MHz
Drain Current, ID -- A
10
9
0.1
IT00063
VGS -- Qg
Gate-to-Sourse Voltage, VGS -- V
VDS=10V
ID=100mA
8
7
6
5
4
3
2
1
Ciss, Coss, Crss -- pF
3
2
10
7
5
3
2
Ciss
Coss
Crss
1.0
0
5
10
15
20
25
30
35
40
45
50
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
Drain-to-Source Voltage, VDS -- V
IT00064
Total Gate Charge, Qg -- nC
IT00065
No.6561-3/4
5LN01S
0.20
PD -- Ta
Allowable Power Dissipation, PD -- W
0.15
0.10
0.05
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta --
°C
IT01961
Note on usage : Since the 5LN01S is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be
evaluated in an independent device, the customer should always evaluate and test devices mounted
in the customer's products or equipment.
SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any
and all semiconductor products fail with some probability. It is possible that these probabilistic failures
could give rise to accidents or events that could endanger human lives, that could give rise to smoke or
fire, or that could cause damage to other property. When designing equipment, adopt safety measures
so that these kinds of accidents or events cannot occur. Such measures include but are not limited to
protective circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO Semiconductor products (including technical data,services) described
or contained herein are controlled under any of applicable local export control laws and regulations, such
products must not be exported without obtaining the export license from the authorities concerned in
accordance with the above law.
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or mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO Semiconductor product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
guaranteed for volume production. SANYO Semiconductor believes information herein is accurate
and reliable, but no guarantees are made or implied regarding its use or any infringements of
intellectual property rights or other rights of third parties.
This catalog provides information as of April, 2006. Specifications and information herein are subject
to change without notice.
PS No.6561-4/4
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