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B360B-E3-5BT

Description
3 A, 50 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size91KB,4 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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B360B-E3-5BT Overview

3 A, 50 V, SILICON, RECTIFIER DIODE

New Product
B350B, B360B
Vishay General Semiconductor
Surface Mount Schottky Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Guardring for overvoltage protection
• Low power losses, high efficiency
• Low forward voltage drop
• High surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
DO-214AA (SMB)
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
at I
F
= 3.0 A
T
J
max.
3.0 A
50 V, 60 V
60 A
0.51 V
150 °C
For use in low voltage, high frequency inverters,
freewheeling, dc-to-dc converters, and polarity protection
applications.
MECHANICAL DATA
Case:
DO-214AA (SMB)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals:
Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity:
Color band denotes the cathode end
per
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Device marking code
Maximum repetitive peak reverse voltage
Maximum average forward rectified current at T
L
(fig. 1)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Operating junction and storage temperature range
V
RRM
I
F(AV)
I
FSM
T
J
, T
STG
SYMBOL
B350B
B35
50
3.0
60
- 55 to + 150
B360B
B36
60
V
A
A
°C
UNIT
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum instantaneous forward voltage
TEST CONDITIONS
I
F
= 3.0 A
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
SYMBOL
V
F (1)
TYP.
0.58
0.51
-
3
MAX.
0.66
V
0.59
100
10
μA
mA
UNIT
Maximum reverse current
Rated V
R
I
R (2)
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width
40 ms
Document Number: 89122
Revision: 13-Oct-09
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1

B360B-E3-5BT Related Products

B360B-E3-5BT B350B B360B
Description 3 A, 50 V, SILICON, RECTIFIER DIODE 3 A, 50 V, SILICON, RECTIFIER DIODE 3 A, 60 V, SILICON, RECTIFIER DIODE
Reach Compliance Code - unknow compli
ECCN code - EAR99 EAR99
Other features - LOW POWER LOSS, FREE WHEELING, UL RECOGNIZED LOW POWER LOSS, FREE WHEELING, UL RECOGNIZED
application - GENERAL PURPOSE GENERAL PURPOSE
Configuration - SINGLE SINGLE
Diode component materials - SILICON SILICON
Diode type - RECTIFIER DIODE RECTIFIER DIODE
JESD-30 code - R-PDSO-C2 R-PDSO-C2
Maximum non-repetitive peak forward current - 100 A 100 A
Number of components - 1 1
Phase - 1 1
Number of terminals - 2 2
Maximum operating temperature - 150 °C 150 °C
Minimum operating temperature - -65 °C -65 °C
Maximum output current - 3 A 3 A
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - RECTANGULAR RECTANGULAR
Package form - SMALL OUTLINE SMALL OUTLINE
Certification status - Not Qualified Not Qualified
Maximum repetitive peak reverse voltage - 50 V 60 V
surface mount - YES YES
technology - SCHOTTKY SCHOTTKY
Terminal form - C BEND C BEND
Terminal location - DUAL DUAL
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