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FM25CL64B

Description
SPECIALTY MEMORY CIRCUIT, PDSO8
Categorystorage   
File Size298KB,14 Pages
ManufacturerRamtron International Corporation (Cypress Semiconductor Corporation)
Websitehttp://www.cypress.com/
Download Datasheet Parametric View All

FM25CL64B Overview

SPECIALTY MEMORY CIRCUIT, PDSO8

FM25CL64B Parametric

Parameter NameAttribute value
Number of functions1
Number of terminals8
Maximum operating temperature85 Cel
Minimum operating temperature-40 Cel
Maximum supply/operating voltage3.65 V
Minimum supply/operating voltage2.7 V
Rated supply voltage3.3 V
Processing package description4 X 4.50 MM, 0.95 MM PITCH, GREEN, DFN-8
stateACTIVE
CraftsmanshipCMOS
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
surface mountYes
Terminal formNO LEAD
Terminal spacing0.9500 mm
Terminal locationDUAL
Packaging MaterialsPLASTIC/EPOXY
Temperature levelINDUSTRIAL
memory width8
organize8K X 8
storage density65536 deg
operating modeSYNCHRONOUS
Number of digits8192 words
Number of digits8K
Memory IC typeMEMORY CIRCUIT
Preliminary
FM25CL64B
64Kb Serial 3V F-RAM Memory
Features
64K bit Ferroelectric Nonvolatile RAM
Organized as 8,192 x 8 bits
High Endurance 100 Trillion (10
14
) Read/Writes
38 Year Data Retention (
@
+75ºC)
NoDelay™ Writes
Advanced High-Reliability Ferroelectric Process
Very Fast Serial Peripheral Interface - SPI
Up to 20 MHz Frequency
Direct Hardware Replacement for EEPROM
SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)
Sophisticated Write Protection Scheme
Hardware Protection
Software Protection
Low Power Consumption
Low Voltage Operation 2.7-3.65V
200
µA
Active Current (1 MHz)
3
µA
(typ.) Standby Current
Industry Standard Configuration
Industrial Temperature -40°C to +85°C
8-pin “Green”/RoHS SOIC and TDFN Packages
Description
The FM25CL64B is a 64-kilobit nonvolatile memory
employing an advanced ferroelectric process. A
ferroelectric random access memory or F-RAM is
nonvolatile and performs reads and writes like a
RAM. It provides reliable data retention for 38 years
while eliminating the complexities, overhead, and
system level reliability problems caused by
EEPROM and other nonvolatile memories.
The FM25CL64B performs write operations at bus
speed. No write delays are incurred. Data is written to
the memory array immediately after each byte has
been successfully transferred to the device. The next
bus cycle may commence immediately without the
need for data polling. In addition, the product offers
substantial write endurance compared with other
nonvolatile memories. The FM25CL64B is capable
of supporting 10
14
read/write cycles, or 100 million
times more write cycles than EEPROM.
These capabilities make the FM25CL64B ideal for
nonvolatile memory applications requiring frequent
or rapid writes. Examples range from data collection,
where the number of write cycles may be critical, to
demanding industrial controls where the long write
time of EEPROM can cause data loss.
The FM25CL64B provides substantial benefits to
users of serial EEPROM as a hardware drop-in
replacement. The FM25CL64B uses the high-speed
SPI bus, which enhances the high-speed write
capability
of
F-RAM
technology.
Device
specifications are guaranteed over an industrial
temperature range of -40°C to +85°C.
This product conforms to specifications per the terms of the Ramtron
standard warranty. The product has completed Ramtron’s internal
qualification testing and has reached production status.
Pin Configuration
CS
SO
WP
VSS
1
2
3
4
8
7
6
5
VDD
HOLD
SCK
SI
Top View
/CS
SO
/WP
VSS
1
2
3
4
8
7
6
5
VDD
/HOLD
SCK
SI
Pin Name
/CS
/WP
/HOLD
SCK
SI
SO
VDD
VSS
Function
Chip Select
Write Protect
Hold
Serial Clock
Serial Data Input
Serial Data Output
Supply Voltage
Ground
Ordering Information
FM25CL64B-G
“Green” 8-pin SOIC
FM25CL64B-GTR
“Green” 8-pin SOIC,
Tape & Reel
FM25CL64B-DG
“Green”/RoHS 8-pin TDFN
FM25CL64B-DGTR
“Green”/RoHS 8-pin TDFN,
Tape & Reel
Ramtron International Corporation
1850 Ramtron Drive, Colorado Springs, CO 80921
(800) 545-FRAM, (719) 481-7000
http://www.ramtron.com
Rev. 1.2
Feb. 2011
Page 1 of 14

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